DISCRETE SEMICONDUCTORS DATA SHEET BFQ225 NPN video transistor Product specification Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC05 1996 Sep 04 Philips Semiconductors Product specification NPN video transistor BFQ225 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. handbook, halfpage DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT128B package. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base 1 2 3 MGA323 Fig.1 Simplified outline SOT128B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 100 V − 100 mA Tmb = 25 °C − 3.75 W transition frequency IC = 25 mA; VCE = 10 V 1 − GHz feedback capacitance IC = 0; VCB = 10 V 1.7 − pF − 175 °C VCBO collector-base voltage IC collector current (DC) Ptot total power dissipation fT Cre Tj junction temperature open emitter LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 100 V VCER collector-emitter voltage RBE = 100 Ω − 95 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) see Fig.2 − 100 mA IC(AV) average collector current see Fig.2 − 100 mA Ptot total power dissipation Tmb = 25 °C; see Fig.3 − 3.75 W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C 1996 Sep 04 2 Philips Semiconductors Product specification NPN video transistor BFQ225 MBG486 103 handbook, halfpage MBG487 4 handbook, halfpage Ptot (W) IC (mA) 3 102 2 1 10 10 102 VCE (V) 0 103 0 Tmb = 25 °C. Tmb (oC) 100 200 VCE ≤ 50 V. Fig.2 DC SOAR. Fig.3 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS VALUE UNIT 40 K/W Ptot = 3.75 W; Tmb = 25 °C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 100 − − V collector-emitter breakdown voltage IC = 1 mA; RBE = 100 Ω 95 − − V emitter-base breakdown voltage IC = 0; IE = 0.1 mA 3 − − V ICES collector-emitter leakage current VCE = 50 V; VBE = 0 − − 100 µA hFE DC current gain IC = 25 mA; VCE = 10 V; see Fig.4 20 − − fT transition frequency IC = 25 mA; VCE = 10 V; f = 500 MHz; see Fig.5 − 1 − GHz Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz; see Fig.6 − 1.7 − pF V(BR)CBO collector-base breakdown voltage V(BR)CER V(BR)EBO 1996 Sep 04 IC = 0.1 mA; IE = 0 3 Philips Semiconductors Product specification NPN video transistor BFQ225 MBG488 60 MBG489 1.2 handbook, halfpage handbook, halfpage fT (MHz) hFE 40 0.8 20 0.4 0 0 0 20 40 60 80 100 IC (mA) 10 20 VCE = 10 V; tp = 500 µs. VCE = 10 V; f = 500 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. MBG490 4 handbook, halfpage Cre (pF) 3 2 1 0 0 2 4 6 8 10 VCB (V) f = 1 MHz. Fig.6 Feedback capacitance as a function of collector-base voltage; typical values. 1996 Sep 04 4 50 IC (mA) 102 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN video transistor BFQ225 PACKAGE OUTLINE 10.4 max handbook, full pagewidth 0.56 max 3.8 3.6 3.8 24.2 max 8.6 max 2.5 max (1) 2.4 max 12.2 min 1 2 3 0.8 (3x) 0.6 2.54 0.65 max 2.54 1.6 4.6 max 10 MGA322 Dimensions in mm. Fig.7 SOT128B. 1996 Sep 04 5 Philips Semiconductors Product specification NPN video transistor BFQ225 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 04 6