VISHAY TLDR5800

TLDR5800
Vishay Telefunken
High Intensity LED in ø 5 mm Clear Package
Color
Type
Technology
Double hetero red
TLDR5800
GaAlAs on GaAs
Description
Angle of Half Intensity
±ö
4°
94 8631
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range
of drive current. It can be DC or pulse driven to achieve
desired light output.
A clear 5 mm package is used to provide an extremely
high light intensity of more than 2000 mcd at a very
narrow viewing angle.
Features
D Exceptional brightness
(IVtyp = 2500 mcd at IF = 20 mA)
D
D
D
D
D
D
D
Very high intensity even at low drive currents
Narrow viewing angle (ϕ = ±4°)
Low forward voltage
5 mm (T–1¾) clear package
Deep red color
Categorized for luminous intensity
Outstanding material efficiency
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
Document Number 83004
Rev. A1, 04-Feb-99
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TLDR5800
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLDR5800
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
tp ≤ 10 ms
Tamb ≤ 65°C
t ≤ 5 s, 2 mm from body
Value
6
50
1
100
100
–20 to +100
–55 to +100
260
350
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
Double hetero red (TLDR5800 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
IF = 20 mA, IVmin/IVmax ≥ 0.5
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IR = 10 mA
VR = 0, f = 1 MHz
Type
Symbol
IV
ld
lp
ϕ
VF
VR
Cj
Min
1000
6
Typ
2500
648
650
±4
1.8
15
50
Max
Unit
mcd
nm
nm
deg
V
V
pF
2.2
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
60
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
125
100
75
50
25
40
30
20
10
0
0
0
95 10918
50
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1 Power Dissipation vs. Ambient Temperature
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0
96 11489
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2 Forward Current vs. Ambient Temperature
Document Number 83004
Rev. A1, 04-Feb-99
TLDR5800
Vishay Telefunken
IF – Forward Current ( mA )
Tamb
tp/T=0.01
1000
2.0
v65°C
Iv rel – Relative Luminous Intensity
10000
0.02
0.05
0.1
100
1
10
0.2
0.5
1
0.01
DH Red
1.6
1.2
0.8
0.4
0
0.1
1
100
10
tp – Pulse Length ( ms )
95 10025
0
Figure 3 Forward Current vs. Pulse Length
10
°
20
°
60
80
100
2.4
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
40
Figure 6 Rel. Luminous Intensity vs.
Ambient Temperature
80°
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
0°
20
Tamb – Ambient Temperature ( °C )
95 10015
DH Red
2.0
1.6
1.2
0.8
0.4
IFAV=10mA, const.
0
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10022
95 10262
Figure 4 Rel. Luminous Intensity vs.
Angular Displacement
50
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
10
Iv rel – Relative Luminous Intensity
DH Red
IF – Forward Current ( mA )
20
1
Figure 7 Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
100
10
1
DH Red
1
0.1
0.01
1
95 10014
10
1.5
2
2.5
3
VF – Forward Voltage ( V )
Figure 5 Forward Current vs. Forward Voltage
Document Number 83004
Rev. A1, 04-Feb-99
0.1
95 10016
1
10
100
IF – Forward Current ( mA )
Figure 8 Relative Luminous Intensity vs. Forward Current
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TLDR5800
Vishay Telefunken
Iv rel – Relative Luminous Intensity
1.2
DH Red
1.0
0.8
0.6
0.4
0.2
0
600
95 10018
620
640
660
680
700
l – Wavelength ( nm )
Figure 9 Relative Luminous Intensity vs. Wavelength
Dimensions in mm
9511476
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Document Number 83004
Rev. A1, 04-Feb-99
TLDR5800
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83004
Rev. A1, 04-Feb-99
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