Philips Semiconductors Linear Products Product specification Quad high-performance operational amplifier DESCRIPTION NE/SE5514 PIN CONFIGURATIONS The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system performance in dual supply applications. Output characteristics are similar to a µA741 with improved slew and drive capability. N Packages FEATURES • Low input bias current: < ±3nA • Low input offset current: < ±3nA • Low input offset voltage:<1mV • Low supply current: 1.5mA/A • 1V/µs slew rate • High input impedance: 100MΩ • High common-mode impedance: 10GΩ • Internal compensation for unity gain • 600Ω drive capability (7VRMS) OUTPUT 1 1 14 OUTPUT 1 –INPUT 1 2 13 –INPUT 1 +INPUT 1 3 12 +INPUT 1 V+ 4 11 V– +INPUT 2 5 10 +INPUT 2 –INPUT 2 6 9 –INPUT 2 OUTPUT 2 7 8 OUTPUT 2 1 3 2 4 D Package1 OUTPUT 1 1 –INPUT 1 2 +INPUT 1 3 14 +INPUT 1 V+ 4 13 V– NC 5 12 NC +INPUT 2 6 –INPUT 2 7 OUTPUT 2 8 16 OUTPUT 1 1 15 –INPUT 1 2 11 +INPUT 2 3 4 10 –INPUT 2 9 OUTPUT 2 APPLICATIONS • AC amplifiers • RC active filters • Transducer amplifiers • DC gain block • Instrumentation amplifier NOTE: 1. SOL - Released in 16-lead large SO package only. Pinout is different than N package. ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Small Outline Large (SOL) package DESCRIPTION 0 to +70°C NE5514D 0171B 14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5514N 0405B 14-Pin Plastic Dual In-Line Package (DIP) -55 to +125°C SE5514N 0405B August 31, 1994 82 853-1175 13721 Philips Semiconductors Linear Products Product specification Quad high-performance operational amplifier NE/SE5514 EQUIVALENT SCHEMATIC (ONE OP AMP) V+ +VIN –VIN OUTPUT –V ABSOLUTE MAXIMUM RATINGS SYMBOL RATING UNIT VCC Supply voltage PARAMETER ±16 V VDIFF Differential input voltage 32 V VIN Input voltage 0 to 32 V Output short to ground Continuous TSTG Storage temperature range -65 to +150 °C TSOLD Lead soldering temperature (10sec max) 300 °C TA Operating ambient temperature range NE5514 0 to 70 °C SE5514 -55 to +125 °C N package 1420 mW D package 1250 mW PMAX Maximum power dissipation TA=25°C (still-air)1 NOTES: 1. The following derating factors should be applied above 25°C N package at 11.4mW/°C D package at 10.0mW/°C August 31, 1994 83 Philips Semiconductors Linear Products Product specification Quad high-performance operational amplifier NE/SE5514 ELECTRICAL CHARACTERISTICS VCC = ±15V, TA = 25°C unless otherwise specified. SYMBOL VOS PARAMETER Max 2 3 0.7 1 Over temp. 4 Input offset current RS=100kΩ, TA=+25°C Over temp. 3 4 Over temp. 30 RS=100kΩ, TA=+25°C Over temp. 3 4 Input bias current ∆IBIAS NE5514 Typ RS=100Ω, TA=+25°C Over temp. ∆IOS IBIAS SE5514 Min Input offset voltage ∆VOS IOS TEST CONDITIONS Min Typ Max 1 1.5 5 6 6 8 20 30 40 10 20 6 8 mV µV/°C 5 10 20 UNIT nA pA/°C 20 30 nA Over temp. 30 40 pA/°C RIN Input resistance differential TA=25°C 100 100 MΩ VCM Input common mode range TA=25°C Over temp. CMRR Input common-mode rejection ratio ±13.5 ±13 ±13.7 ±13.2 ±13.5 ±13 ±13.7 ±13.2 V 70 100 70 100 dB RL=2kΩ, TA=25°C VO = ±10V, Over temp. 50 25 200 50 25 200 0.6 1 0.6 1 V/µs VCC=±15V, VIN=±13.5V @ TA=25°C VIN=±13V @ Over temp. AV Large-signal voltage gain SR Slew rate TA=25°C GBW Small-signal unity gain bandwidth TA=25°C 3 3 MHz θM Phase margin TA=25°C 45 45 Deg VOUT Output voltage swing RL=2kΩ, TA=25°C Over temp. ±13 ±12.5 ±13.5 ±13 ±13.5 ±13 V VOUT Output voltage swing RL=600Ω1, TA=25°C Over temp. ±10 ±7.5 ±11.5 ±9 ±11.5 ±9 V ICC Power supply current RL=Open, TA=25°C Over temp. PSRR Power supply rejection ratio ±5V ≤ VCC ≤ ±15V Over temp. AA Amplifier to amplifier coupling THD 6 7 80 ±13 ±12.5 ±10 ±8 10 12 110 6 7 80 V/mV 10 12 mA 110 dB f=1kHz to 20kHz, TA=25°C -120 -120 dB Total harmonic distortion f=10kHz, TA=25°C VO=7VRMS 0.01 0.01 % VNOISE Input noise voltage f=1kHz, TA=25°C ISC Short-circuit current TA=25°C NOTES: 1. Not to exceed maximum power dissipation. August 31, 1994 30 10 84 40 30 60 10 40 nV/√Hz 60 mA