PHILIPS PUMB3

DISCRETE SEMICONDUCTORS
DATA SHEET
PEMB3; PUMB3
PNP/PNP resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2001 Sep 19
2003 Oct 15
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
PEMB3; PUMB3
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
• Simplified circuit design
VCEO
TYP.
MAX.
UNIT
collector-emitter
voltage
−
−50
V
IO
output current (DC)
−
−100
mA
TR1
PNP
−
−
−
APPLICATIONS
TR2
PNP
−
−
−
• Low current peripheral drivers
R1
bias resistor
4.7
−
kΩ
• Replacement of general purpose transistors in digital
applications
R2
bias resistor
open
−
−
• Reduction of component count
• Reduced pick and place costs.
PARAMETER
• Control of IC inputs.
DESCRIPTION
PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PEMB3
PUMB3
NPN/PNP
COMPLEMENT
MARKING CODE
NPN/NPN
COMPLEMENT
PHILIPS
EIAJ
SOT666
−
Z3
PEMD6
PEMH7
SC-88
B5*(1)
PUMD6
PUMH7
SOT363
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
PEMB3
PUMB3
handbook, halfpage
6
5
6
4
5
4
R1
TR2
TR1
R1
1
Top view
2003 Oct 15
2
3
1
MAM452
2
2
3
DESCRIPTION
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMB3; PUMB3
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PEMB3
−
plastic surface mounted package; 6 leads
SOT666
PUMB3
−
plastic surface mounted package; 6 leads
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
note 1
−
200
mW
SOT666
notes 1 and 2
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
note 1
−
300
mW
SOT666
notes 1 and 2
−
300
mW
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 15
3
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMB3; PUMB3
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per transistor
Rth j-a
Tamb ≤ 25 °C
thermal resistance from junction to ambient
SOT363
note 1
625
K/W
SOT666
notes 1 and 2
625
K/W
Per device
Rth j-a
Tamb ≤ 25 °C
thermal resistance from junction to ambient
SOT363
note 1
416
K/W
SOT666
note 1
416
K/W
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −50 V; IE = 0
−
−
−100
nA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB = 0
−
−
−1
μA
VCE = −30 V; IB = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −5 V; IC = −1 mA
200
−
−
VCEsat
saturation voltage
IC = −5 mA; IB = −0.25 mA
−
−
−100
mV
R1
input resistor
3.3
4.7
6.1
kΩ
Cc
collector capacitance
−
−
3
pF
2003 Oct 15
IE = ie = 0; VCB = −10 V;
f = 1 MHz
4
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMB3; PUMB3
PACKAGE OUTLINES
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2003 Oct 15
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMB3; PUMB3
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2003 Oct 15
REFERENCES
IEC
JEDEC
EIAJ
SC-88
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMB3; PUMB3
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Oct 15
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R75/02/pp8
Date of release: 2003 Oct 15
Document order number: 9397 750 11792