DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. 1 PINNING - SOT223H 2 3 MAM043 - 1 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter 4 c collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION f (MHz) VCE (V) PL (mW) Gp (dB) ηC (%) CW, class-AB 900 4.8 600 ≥6 ≥60 1996 Feb 06 2 Philips Semiconductors Product specification UHF power transistor BLT70 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 16 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA Ptot total power dissipation Ts = 60 °C; note 1 − 2.1 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s Ptot = 2.1 W; Ts = 60 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MGD197 3 handbook, halfpage Ptot (W) 2 1 0 0 100 Ts (oC) 200 Fig.2 DC SOAR. 1996 Feb 06 3 VALUE UNIT 55 K/W Philips Semiconductors Product specification UHF power transistor BLT70 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. − UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.5 mA 16 V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.2 mA 2.5 − V ICES collector leakage current VCE = 7 V; VBE = 0 − 0.1 mA hFE DC current gain VCE = 4.8 V; IC = 100 mA 25 − Cc collector capacitance VCB = 4.8 V; IE = ie = 0; f = 1 MHz − 3.5 pF Cre feedback capacitance VCE = 4.8 V; IC = 0; f = 1 MHz − 2.5 pF MGD198 V MGD199 100 4 handbook, halfpage handbook, halfpage Cc (pF) hFE 80 3 60 2 40 1 20 0 0 0 100 200 IC (mA) 300 0 1996 Feb 06 8 12 16 VCB (V) IE = ie = 0; f = 1 MHz; Tj = 25 °C. VCE = 4.8 V; Tj = 25 °C. Fig.3 4 DC current gain as a function of collector current; typical values. Fig.4 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT70 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) CW, class-AB 900 4.8 0.01 0.6 Gp (dB) ηC (%) ≥6 ≥60 typ. 8.1 typ. 73 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts ≤ 60 °C. MGD201 MGD200 100 ηC (%) 10 handbook, halfpage Gp (dB) Gp 1.0 handbook, halfpage PL (W) 80 0.8 6 60 0.6 4 40 0.4 2 20 0.2 8 ηC 0 0.2 0 0.4 0.6 0.8 0 1.0 PL (W) 0 0 f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C. Fig.5 PIN (mW) 200 f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C. Power gain and collector efficiency as functions of load power; typical values. 1996 Feb 06 100 Fig.6 5 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor BLT70 Test circuit information +Vbias +VS handbook, full pagewidth C11 R2 L8 R1 T1 C6 R3 C8 C9 L3 input 50 Ω C1 C2 C3 L1 C4 C5 L2 L7 DUT L4 L5 L6 C7 L9 C10 L10 C12 C14 output 50 Ω C13 MGD205 VS = Vbias = typ. 4.8 V. Fig.7 Common emitter test circuit for class-AB operation at 900 MHz. 1996 Feb 06 6 Philips Semiconductors Product specification UHF power transistor BLT70 List of components used in test circuit (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C6, C9, C14 multilayer ceramic chip capacitor; note 1 100 pF C2 multilayer ceramic chip capacitor; note 1 1 pF C4 multilayer ceramic chip capacitor; note 1 2.4 pF C3, C5, C12, C13 film dielectric trimmer 1.4 to 5.5 pF C7 multilayer ceramic chip capacitor; note 1 5.1 pF C8 tantalum capacitor 1 µF, 35 V C10 multilayer ceramic chip capacitor; note 1 2.7 pF C11 tantalum capacitor 100 µF, 20 V L1 stripline; note 2 50 Ω length 29.1 mm width 5 mm L2 stripline; note 2 50 Ω length 21 mm width 5 mm L3 8 turns enamelled 0.8 mm copper wire 216 nH length 7 mm internal dia. 4.5 mm L4 stripline; note 2 50 Ω length 1 mm width 5 mm L5 stripline; note 2 50 Ω length 3 mm width 2.5 mm L6 stripline; note 2 50 Ω length 12 mm width 5 mm L7 8 turns enamelled 0.8 mm copper wire 105 nH length 7 mm internal dia. 3.4 mm L8 grade 3B Ferroxcube wideband HF choke L9 stripline; note 2 50 Ω length 12 mm width 5 mm L10 stripline; note 2 50 Ω length 28 mm width 5 mm R1 metal film resistor 0.1 W, 15 Ω R2 metal film resistor 0.1 W, 390 Ω R3 metal film resistor 0.6 W, 10 Ω T1 NPN transistor BD139 CATALOGUE No. 2222 809 09004 4132 020 36640 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16"; thickness of the copper sheet 2 × 35 µm. 1996 Feb 06 7 Philips Semiconductors Product specification UHF power transistor BLT70 139 handbook, full pagewidth 79 +VS +Vbias Copper foil C4 C2 C3 C8 C11 T1 R1 C1 L8 R2 L3 C9 C6 L1 L7 L2 C5 R3 L4 L5 L6 L9 C10 C7 C14 L10 C12 C13 Plated through holes BLT70 MGD206 Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7. 1996 Feb 06 8 Philips Semiconductors Product specification UHF power transistor BLT70 MGD203 MGD202 40 L (Ω) 30 20 handbook, Z halfpage handbook, halfpage Zi (Ω) 16 RL ri 20 12 10 8 xi 0 XL 4 −10 0 800 850 900 950 −20 800 1000 f (MHz) 850 900 950 1000 f (MHz) VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C. VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C. Fig.9 Fig.10 Load impedance as a function of frequency (series components); typical values. Input impedance as a function of frequency (series components); typical values. MGD204 12 handbook, halfpage Gp (dB) 8 handbook, halfpage Zi 4 ZL 0 800 850 900 950 f (MHz) MBA451 1000 VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C. Fig.11 Power gain as a function of frequency; typical values. 1996 Feb 06 Fig.12 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLT70 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.13 SOT223H. 1996 Feb 06 7.3 6.7 o 1 1.80 max 0.2 M A 10 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification UHF power transistor BLT70 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 06 11