DISCRETE SEMICONDUCTORS DATA SHEET M3D396 KMZ52 Magnetic Field Sensor Product specification 2000 Jun 09 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 PINNING FEATURES • High sensitivity SYMBOL • Integrated compensation coil • Integrated set/reset coil. PIN DESCRIPTION +Iflip2 1 flip coil VCC2 2 bridge supply voltage GND2 3 ground APPLICATIONS +Icomp2 4 compensation coil • Navigation GND1 5 ground • Current and earth magnetic field measurement +Icomp1 6 compensation coil • Traffic detection. −Icomp1 7 compensation coil −VO1 8 bridge output voltage +VO1 9 bridge output voltage DESCRIPTION The KMZ52 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two magnetoresistive Wheatstone bridges physically offset from one another by 90° and integrated compensation and set/reset coils. The integrated compensation coils allow magnetic field measurement with current feedback loops to generate outputs that are independent of drift in sensitivity. The orientation of sensitivity may be set or changed (flipped) by means of the integrated set/reset coils. A short current pulse should be applied to the compensation coils to recover (set) the sensor after exposure to strong disturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, the output is made independent of sensor and amplifier offset. −Iflip1 10 flip coil +Iflip1 11 flip coil VCC1 12 bridge supply voltage −Icomp2 13 compensation coil −VO2 14 bridge output voltage +VO2 15 bridge output voltage −Iflip2 16 flip coil 16 halfpage handbook, 9 pin 1 index 1 8 MBL201 Fig.1 Simplified outline SOT109-1. 2000 Jun 09 2 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 8 S sensitivity (uncompensated) 12 16 − Voffset offset voltage per supply voltage −1.5 0 +1.5 mV/V Rbridge bridge resistance 1 2 3 kΩ Rcomp compensation coil resistance 100 170 300 Ω Acomp field factor of compensation coil; note 1 19 22 25 A/m ---------mA Rflip resistance of set/reset coil 1 2 3 Ω Iflip recommended flipping current for stable operation; note 2 ±800 ±1000 ±1200 mA tflip flip pulse duration; note 2 1 3 V mV/V -------------kA/m µs 100 Notes 1. The compensation coil generates a field Hcomp = Acomp × Icomp in addition to the external field Hext. Sensor output will become zero if Hext = Hcomp. 2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not exceed the specified limit, see Chapter “Limiting values”. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VCC bridge supply voltage − 8 V Ptot total power dissipation − 130 mW Tstg storage temperature −65 +150 °C Tamb maximum operating temperature −40 −125 °C Icomp maximum compensation current − 15 mA Iflip (max) maximum flipping current − 1500 mA Pflip (max) maximum flipping power dissipation − 50 mW Visol voltage between isolated systems: flip coil and Wheatstone bridge; compensation coil and Wheatsone bridge; flip coil and compensation coil − 60 V THERMAL CHARACTERISTICS SYMBOL Rth j-a 2000 Jun 09 PARAMETER terminal resistance from junction to ambient 3 VALUE UNIT 105 K/W Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 CHARACTERISTICS Tbridge = 25 °C; VCC1 = VCC2 = 5 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − 5 8 V −0.2 − +0.2 kA/m open circuit 12 16 − temperature coefficient of sensitivity Ts = −25 to +125 °C − 0.31 − %/K kSX sensitivity synchronism note 2 92 100 108 % TCVO temperature coefficient of output voltage VCC = 5 V; Tbridge = −25 to +125 °C − −0.4 − %/K Rbridge bridge resistance note 3 1 2 3 kΩ TCRbridge temperature coefficient of bridge resistance Tbridge = −25 to +125 °C; note 4 − 0.3 − %/K −1.5 0 +1.5 mV/V −3 0 +3 µV/V ------------K − − 2 %FS VCC bridge supply voltage H field strength operating range in sensor plane note 1 S sensitivity TCS Voffset offset voltage per supply voltage TCVoffset temperature coefficient of offset voltage FH hysteresis of output voltage Tbridge = −25 to +125 °C; note 5 note 6 mV/V -------------kA/m 100 170 300 Ω 19 22 25 A/m ---------mA Rcomp resistance of compensation coil Acomp field factor of compensation coil Rflip resistance of set/reset coil note 7 1 2 3 Ω TCRflip temperature coefficient of resistance of set/reset coil Tflip = −25 to +125 °C − 0.39 − %/K Iflip recommended flipping current for stable operation ±800 ±1000 ±1200 mA tflip flip pulse duration 1 3 100 µs Risol isolating resistance note 8 1 − − MΩ Visol voltage between isolated systems note 8 − − 50 V Risol_dice isolating resistance between dice die 1 to die 2 f operating frequency α angle die-to-die β angle dice-to-package 1 − − MΩ 0 − 1 MHz note 9 88 90 92 deg note 9 −5 0 +5 deg Notes 1. Due to the ratiometric output, the same supply voltage (VCC) must be applied to both dice in one KMZ52 device. 2. A comp1 × S 1 k SX = 100 × ------------------------------ % A comp2 × S 2 3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3. 4. R bridge ( T ) – R bridge ( T ) 2 1 TCR bridge = 100 -------------------------------------------------------------R bridge ( T ) ( T 2 – T 1 ) Where T 1 = – 25°C ; T 2 = 125°C . 1 2000 Jun 09 4 Philips Semiconductors Product specification Magnetic Field Sensor 5. V offset ( T ) – V offset ( T ) 2 1 TCV offset = -------------------------------------------------------( T2 – T1 ) KMZ52 Where T 1 = – 25°C ; T 2 = 125°C . 6. Resistance of compensation coil die 1: between pins 6 and 7; resistance of compensation coil die 2: between pins 4 to 13. 7. Resistance of set/reset coil die 1: between pins 10 and 11; resistance of set/reset coil die 2: between pins 1 to 16. 8. Isolating resistance die 1: pins 7 and 8, 7 and 10 and 8 to 10; isolating resistance die 2: pins 1 to 2, 1 to 4 and 2 to 4. 9. Angle die-to-die: die 2 is turned by 90 ±2 degrees in anticlockwise direction with respect to die 1; angle dice-to-package: both dice in their fixed die-to-die position are tilted towards the package edges by 0 ±5 degrees. 2000 Jun 09 5 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 APPLICATION INFORMATION If the angle α between external magnetic field H and the long axis of the package is zero, H is parallel to the most sensitive direction of die 2 and perpendicular to the sensitive direction of die 1. A magnetic field turning clockwise (see Fig.2) thus yields an output proportional to cos α (Vout2) and an output proportional to sin α (Vout1). handbook, halfpage 16 9 Die 2 Die 1 y x 1 8 MBL202 y H α x Fig.2 Angular relationship of dice. handbook, full pagewidth −Iflip2 +VO2 −VO2 16 15 14 −Icomp2 13 VCC1 +Iflip1 12 11 −Iflip1 +VO1 10 9 7 8 Z4 Z1 Z2 bridge 2 bridge 1 Z3 1 +Iflip2 2 VCC2 3 GND2 4 5 +Icomp2 GND1 6 +Icomp1 Fig.3 Simplified circuit diagram. 2000 Jun 09 6 −Icomp1 −VO1 MBL203 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.050 0.039 0.016 0.028 0.020 0.01 0.01 0.004 0.028 0.012 inches 0.244 0.041 0.228 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07 MS-012 2000 Jun 09 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 7 o 8 0o Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Jun 09 8 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 NOTES 2000 Jun 09 9 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 NOTES 2000 Jun 09 10 Philips Semiconductors Product specification Magnetic Field Sensor KMZ52 NOTES 2000 Jun 09 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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