PESDxL1BA series Low capacitance bidirectional ESD protection diodes in SOD323 Rev. 01 — 4 October 2004 Product data sheet 1. Product profile 1.1 General description Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features ■ ■ ■ ■ Bidirectional ESD protection of one line Max. peak pulse power: Ppp = 500 W Low clamping voltage: V(CL)R = 26 V Ultra low leakage current: IRM < 0.09 µA ■ ■ ■ ■ ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A Very small SMD plastic package. 1.3 Applications ■ Computers and peripherals ■ Communication systems ■ Audio and video equipment ■ Data lines ■ CAN bus protection. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V PESD24VL1BA - - 24 V PESD3V3L1BA - 101 - pF PESD5V0L1BA - 75 - pF PESD12VL1BA - 19 - pF PESD15VL1BA - 16 - pF PESD24VL1BA - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 2. Pinning information Table 2: Pinning Pin Description 1 cathode 1 2 cathode 2 Simplified outline 1 Symbol 2 1 2 sym045 3. Ordering information Table 3: Ordering information Type number Package Name PESDxL1BA series SC-76 Description Version plastic surface mounted package; 2 leads SOD323 4. Marking Table 4: Marking codes Type number Marking code PESD3V3L1BA AB PESD5V0L1BA AC PESD12VL1BA AD PESD15VL1BA AE PESD24VL1BA AF 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 2 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L1BA - 500 W PESD5V0L1BA - 500 W PESD12VL1BA - 200 W PESD15VL1BA - 200 W - 200 W PESD3V3L1BA - 18 A PESD5V0L1BA - 15 A PESD12VL1BA - 5 A PESD15VL1BA - 5 A PESD24VL1BA - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Ppp Parameter Conditions peak pulse power 8/20 µs [1] PESD24VL1BA peak pulse current Ipp [1] Symbol ESD ESD maximum ratings Parameter Conditions Min Max Unit PESD3V3L1BA - 30 kV PESD5V0L1BA - 30 kV PESD12VL1BA - 30 kV PESD15VL1BA - 30 kV PESD24VL1BA - 23 kV - 10 kV electrostatic discharge capability PESDxL1BA series IEC 61000-4-2 (contact discharge) [1] HBM MIL-Std 883 Device stressed with ten non-repetitive ESD pulses; see Figure 2. Table 7: ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV 9397 750 13595 Product data sheet [1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. Table 6: [1] 8/20 µs © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 3 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 001aaa631 001aaa630 120 Ipp 100 % 90 % 100 % Ipp; 8 µs Ipp (%) 80 e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5. 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2. 9397 750 13595 Product data sheet t 30 ns 40 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 4 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 6. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V - - 24 V PESD24VL1BA IRM V(BR) reverse leakage current see Figure 7 PESD3V3L1BA VRWM = 3.3 V - 0.09 2 µA PESD5V0L1BA VRWM = 5.0 V - 0.01 1 µA PESD12VL1BA VRWM = 12 V - <1 50 nA PESD15VL1BA VRWM = 15 V - <1 50 nA PESD24VL1BA VRWM = 24 V - <1 50 nA breakdown voltage IR = 5 mA PESD3V3L1BA 5.8 6.4 6.9 V PESD5V0L1BA 7.0 7.6 8.2 V PESD12VL1BA 14.2 15.9 16.7 V PESD15VL1BA 17.1 18.9 20.3 V 25.4 27.8 30.3 V PESD3V3L1BA - 101 - pF PESD5V0L1BA - 75 - pF PESD12VL1BA - 19 - pF PESD15VL1BA - 16 - pF - 11 - pF Ipp = 1 A - - 8 V Ipp = 18 A - - 26 V Ipp = 1 A - - 10 V Ipp = 15 A - - 33 V Ipp = 1 A - - 20 V Ipp = 5A - - 37 V Ipp = 1 A - - 25 V Ipp = 5 A - - 44 V Ipp = 1 A - - 40 V Ipp = 3 A - - 70 V PESD24VL1BA Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 and 6 PESD24VL1BA V(CL)R [1] clamping voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 5 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 Table 8: Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions rdif differential resistance IR = 1 mA [1] Min Typ Max Unit PESD3V3L1BA - - 400 Ω PESD5V0L1BA - - 80 Ω PESD12VL1BA - - 200 Ω PESD15VL1BA - - 225 Ω PESD24VL1BA - - 300 Ω Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 6 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 006aaa066 104 001aaa193 1.2 Ppp Ppp (W) Ppp(25˚C) 103 0.8 (1) 102 0.4 (2) 10 1 102 10 103 104 0 0 50 100 150 t p (µs) 200 Tj (°C) Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Figure 1. (1) PESD3V3L1BA and PESD5V0L1BA. (2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA. Fig 3. Peak pulse power dissipation as a function of pulse time; typical values. 006aaa067 110 Cd (pF) 100 Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values. 006aaa068 20 Cd (pF) 16 90 (1) 12 (1) 80 (2) 8 70 (3) (2) 60 4 0 50 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) Tamb = 25 °C; f = 1 MHz. Tamb = 25 °C; f = 1 MHz. (1) PESD3V3L1BA. (1) PESD12VL1BA. (2) PESD5V0L1BA. (2) PESD15VL1BA. (3) PESD24VL1BA. Fig 5. Diode capacitance as a function of reverse voltage; typical values. Fig 6. Diode capacitance as a function of reverse voltage; typical values. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 7 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 006aaa069 10 (1) IRM IRM(25°C) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3L1BA; PESD5V0L1BA. For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C. Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 8 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 ESD TESTER RZ 450 Ω CZ 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω 1 DUT: PESDxL1BA IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω 2 vertical scale = 20 V/div; horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VL1BA GND PESD15VL1BA GND PESD12VL1BA GND PESD5V0L1BA GND GND PESD3V3L1BA GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L1BA GND PESD5V0L1BA GND PESD12VL1BA GND PESD15VL1BA GND PESD24VL1BA vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa070 Fig 8. ESD clamping test set-up and waveforms. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 9 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 7. Application information The PESDxL1BA series is designed for bidirectional protection of one signal line from the damage caused by Electro Static Discharge (ESD) and surge pulses. The PESDxL1BA series may be used on lines where the signal polarity is above and below ground. The PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs waveform. line to be protected PESDxL1BA 006aaa071 ground Fig 9. Typical application: Bidirectional protection of one signal line. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 10 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 8. Package outline Plastic surface mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC SOD323 JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17 Fig 10. Package outline SOD323 (SC-76). 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 11 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PESDxL1BA series [1] Package SOD323 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 14. 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 12 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PESDXL1BA_SER_1 20041004 Product data sheet - 9397 750 13595 - 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 13 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13595 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 4 October 2004 14 of 15 PESDxL1BA series Philips Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information . . . . . . . . . . . . . . . . . . . . 14 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 4 October 2004 Document number: 9397 750 13595 Published in The Netherlands