PHILIPS BDP31

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDP31
NPN medium power transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
FEATURES
PINNING
• High current (max. 3 A)
PIN
• Low voltage (max. 45 V).
DESCRIPTION
1
base
2,4
APPLICATIONS
collector
3
emitter
• General purpose medium power applications.
4
handbook, halfpage
DESCRIPTION
2, 4
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BDP32.
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
70
V
VCEO
collector-emitter voltage
open base
−
45
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
3
A
ICM
peak collector current
−
6
A
IBM
peak base current
−
0.5
A
Ptot
total power dissipation
−
1.35
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tmb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
UNIT
91
K/W
10
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 50 V;
−
50
nA
IE = 0; VCB = 50 V; Tj = 150 °C
−
10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V;
−
50
hFE
DC current gain
IC = 0.5 A; VCE = 12 V; note 1; see Fig.2
40
−
IC = 2 A; VCE = 1 V; note 1; see Fig.2
20
−
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA; note 1
−
300
mV
IC = 2 A; IB = 200 mA; note 1
−
700
mV
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
−
1.2
V
IC = 2 A; IB = 200 mA; note 1
−
1.5
V
IC = 250 mA; VCE = 5 V; f = 100 MHz
60
−
MHz
fT
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
MGD840
80
handbook, full pagewidth
hFE
60
40
20
0
10−1
1
102
10
VCE = 1 V.
Fig.2 DC current gain; typical values.
1999 Apr 23
4
103
IC (mA)
104
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1999 Apr 23
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
6
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
NOTES
1999 Apr 23
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 23
Document order number:
9397 750 05805