Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2065/A SD253N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 250A 1.5 to 2.0 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-205AB (DO-9) Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD253N/R Units 250 A 85 °C 392 A @ 50Hz 5350 A @ 60Hz 5600 A @ 50Hz 143 KA2s @ 60Hz 130 KA2s 400 to 1600 V 1.5 to 2.0 µs 25 °C - 40 to 125 °C IF(AV) @ TC IF(RMS) IFSM I 2t V RRM range trr range @ TJ TJ To Order case style DO-205AB (DO-9) PreviousSeries Datasheet SD253N/R Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM max. repetitive VRSM , maximum non- I RRM max. Code peak and off-state voltage V repetitive peak voltage V TJ = 125°C mA 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 Type number SD253N/R..S15 SD253N/R..S20 35 12 Forward Conduction Parameter SD253N/R Units Max. average forward current 250 A @ Case temperature 85 °C I F(RMS) Max. RMS current 392 A I FSM Max. peak, one-cycle 5350 non-repetitive forward current 5600 I F(AV) Maximum I2 t for fusing Maximum I2√t for fusing DC @ 74°C case temperature No voltage t = 8.3ms reapplied t = 10ms 100% VRRM 4710 t = 8.3ms reapplied Sinusoidal half wave, 143 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied 101 t = 10ms 100% VRRM 92 t = 8.3ms reapplied A 130 I 2 √t 180° conduction, half sine wave. t = 10ms 4500 I 2t Conditions 1430 V F(TO)1 Low level of threshold voltage 0.87 V F(TO) 2 High level of threshold voltage 1.17 r f1 Low level of forward slope resistance 0.62 r f2 High level of forward slope resistance 0.29 V FM Max. forward voltage 1.38 KA2s KA2√s V t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. mΩ (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. V Ipk= 785A, TJ = 25°C, tp = 400 µs square pulse (I > π x IF(AV)), TJ = TJ max. Recovery Characteristics Code typical t S15 S20 Test conditions TJ = 25 oC rr I pk di/dt Max. values @ TJ = 125 °C V r @ 25% IRRM Square Pulse (µs) (A) (A/µs) (V) 750 25 - 30 1.5 2.0 t rr Q rr I rr @ 25% IRRM (µs) (µC) (A) 2.9 90 44 3.2 107 46 To Order 2222222222222 Previous Datasheet Index Next SD253N/R Data SheetSeries Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-repetitive Surge Current To Order Fig. 6 - Maximum Non-repetitive Surge Current Previous Datasheet SD253N/R Series Index Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - Forward Voltage Drop Characteristics Fig. 9 - Recovery Time Characteristics Next Data Sheet Fig. 10 - Recovery Charge Characteristics Fig. 11 - Recovery Current Characteristics To Order Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics Previous Datasheet Index Next SD253N/R Data SheetSeries Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics To Order Previous Datasheet Index Next Data Sheet SD253N/R Series Thermal and Mechanical Specification Parameter SD253N/R TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.115 RthCS Max. thermal resistance, case to heatsink 0.08 T Mounting torque ± 10% Units °C K/W 31 Approximate weight Nm Not lubricated threads Lubricated threads 250 Case style DC operation Mounting surface, smooth, flat and greased 24.5 wt Conditions g DO-205AB (DO-9) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.010 0.008 120° 0.013 0.014 90° 0.017 0.019 60° 0.025 0.027 30° 0.044 0.044 Conditions TJ = TJ max. 23 K/W Ordering Information Table Device Code SD 25 3 R 1 2 3 4 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud) 16 S20 5 6 R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A M = Stud base DO-205AB (DO-9) M16 X 1.5 8 -7 B = Flag top terminals (for Cathode/ Anode Leads) S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) None = Not isolated lead 9 - V = Glass-metal seal To Order P B V 7 8 9 PreviousSeries Datasheet SD253N/R Index Next Data Sheet Outline Table GLASS-METAL SEAL 19 (0.75) 4 (0.16) MAX. 39 ( 1.5 3) M A X. DIA. 8.5 (0.33) NOM. 2 C.S. 35mm (0.054 s.i.) 12 SW 32 16 ( 0.6 3) M AX . 2 8.5 ( 1.1 2) M A X. DIA. 28.5 (1.08) MAX. Conform to JEDEC DO-205AB (DO-9) All dimensions in millimeters (inches) 2 1 ( 0.82 ) M AX . 3/4-16UNF-2A* * FOR METRIC DEVICE: M16 X 1.5 GLASS-METAL SEAL 21 (0.83) 14 (0.55) 1 3 ( 0.51 ) DIA. 6.5 (0.26) 6 2 (2 .4 4) 16 (0 .6 3 ) M AX . 2 8 .5 (1 .1 2 ) M AX . DIA. 28.5 (1.12) MAX. 2222222222222 21 ( 0.8 3 ) M AX. 7 0 (2 .7 5) M A X . DO-205AB (DO-9) Flag 3/4"-16UNF-2A* All dimensions in millimeters (inches) To Order 3 (0 .1 2 ) *FOR METRIC DEVICE: M16 X 1.5 3 2 (1 .2 6 ) 75 (2 .95) M IN . 20 0 (7.87 ) ± 10 (0.3 9) 9.5 ( 0.3 7) M IN . MAX.