IRF IRF7702GPBF

PD- 96148A
IRF7703GPbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
VDSS
RDS(on) max (mW)
ID
-40V
28@VGS = -10V
45@VGS = -4.5V
-6.0A
-4.8A
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Description
HEXFET®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-6.0
-4.7
-24
1.5
0.96
0.012
± 20
-55 to + 150
V
W/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
05/15/09
IRF7703GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.030
–––
–––
–––
–––
–––
–––
–––
–––
41
16
16
43
405
155
77
5220
416
337
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
28
VGS = -10V, ID = -6.0A ‚
mΩ
45
VGS = -4.5V, ID = -4.8A ‚
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -6.0A
-15
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
62
ID = -6.0A
25
nC
VDS = -20V
24
VGS = -4.5V
–––
VDD = -20V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-24
–––
–––
–––
–––
34
56
-1.2
51
84
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V
TJ = 25°C, IF = -1.5A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ Surface mounted on 1 in square Cu board
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7703GPbF
10000
1000
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
100
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
1000
10
1
0.1
-2.7V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
100
10
-2.7V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 150° C
10
TJ = 25 ° C
0.1
0.01
2.0
V DS= -15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1
1
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-I D , Drain-to-Source Current (A)
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
5.0
2.0
ID = -6.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7703GPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
1000
Coss
Crss
20
-VGS , Gate-to-Source Voltage (V)
100000
100
1
10
12
8
4
0
60
100
-I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
90
120
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
-ISD , Reverse Drain Current (A)
30
QG , Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)
4
V DS= -32V
V DS= -20V
16
0
100
ID = -6.0
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.2
0
1
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7703GPbF
6.0
VDS
VGS
-ID , Drain Current (A)
4.8
RD
D.U.T.
RG
-
+
3.6
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.4
Fig 10a. Switching Time Test Circuit
1.2
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ =P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.05
0.040
R DS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF7703GPbF
VGS = -4.5V
0.035
0.04
0.030
ID = -6.0A
0.03
0.025
0.02
VGS = -10V
0.020
0.01
3.0
5.0
7.0
9.0
11.0
13.0
15.0
0.015
0
5
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
20
25
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7703GPbF
150
130
2.5
110
ID = -250µA
Power (W)
-VGS(th) Gate threshold Voltage (V)
3.0
2.0
90
70
50
1.5
30
10
1.0
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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150
0.00
0.01
0.10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7703GPbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7703GPbF
TSSOP8 Part Marking Information
(;$03/( 7+,6,6$1,5)3%)
3$57180%(5
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
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