Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code (tape and reel) BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 35 ˚C Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 600 Junction - soldering point Rth JS ≤ 460 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAV 170 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. 70 – – DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF Reverse current VR = 70 V VR = 70 V, TA = 150 ˚C IR V mV – – – – – – – – 900 1000 1100 1250 nA – – – – 5 80 AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CD – 2 – pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr – 0.5 3 µs Test circuit for reverse recovery time Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BAV 170 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) Semiconductor Group 3 BAV 170 Forward voltage VF = f (TA) Semiconductor Group 4