Bulletin I27294 12/06 IRKDS201/045P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS201.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. (1) ~ + (2) 175°C TJ operation Low forward voltage drop High frequency operation - Guard ring for enhanced ruggedness and long term reliability UL pending (3) TOTALLY LEAD-FREE, RoHS Compliant Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 100 A VRRM 45 V IFSM @ tp = 5 μs sine 8600 A VF @ 100Apk, TJ=125°C 0.65 V TJ range - 55 to 175 °C waveform www.irf.com Outline TO-240AA 1 IRKDS201/ 045P Bulletin I27295 12/06 Voltage Ratings Parameters VR IRKDS201/045P Max. DC Reverse Voltage (V) 45 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Values Units 200 A Per Module Current Per Leg 100 Max. Peak One Cycle Non-Repetitive 8600 Surge Current 1850 EAS Non-Repetitive Avalanche Energy 270 mJ IAR Repetitive Avalanche Current (Per Leg) 20 A IFSM A Conditions 50% duty cycle @ TC = 120 °C, rectangular wave form 5μs Sine or 3μs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 °C, IAS = 24 Amps, L = 1mH Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM IRM Values Units Max. Forward Voltage Drop (1) Max. Reverse Leakage Current (1) Conditions 0.7 0.92 V V @ 100A @ 200A 0.65 V @ 100A 0.86 V @ 200A 10 mA TJ = 25 °C 90 mA TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = rated VR CT Max. Junction Capacitance 5200 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change VINS 10000 RMS isolation voltage (1 sec) 3500 V/ μs (Rated VR) V 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500μs Thermal-Mechanical Specifications Parameters Values Units °C TJ Max. Junction Temperature Range -55 to 175 Tstg Max. Storage Temperature Range -55 to 175 Conditions °C RthJC Max. Thermal Resistance, Junction to Case (Per Leg) 0.6 °C/W DC operation RthCS Max. Thermal Resistance, case to Heatsink 0.1 °C/W Mounting Surface, smooth and greased wt T Approximate Weight Mounting Torque ± 10% Case Style 2 to heatsink busbar 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC www.irf.com IRKDS201/ 045P Bulletin I27294 12/06 1000 1000 Reverse Current - IR (mA) 175°C 100 125C 10 1 0.1 25°C 0.01 0.001 5 10 15 20 25 30 35 40 45 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 10 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175°C 100 Tj = 125°C Tj = 25°C 1 Tj = 25˚C 1000 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 0 10 20 30 40 50 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 Single Pulse (Thermal Resistance) 0.01 1E-05 www.irf.com D = 0.2 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 1E+01 3 IRKDS201/ 045P Bulletin I27295 12/06 100 Square wave (D=0.50) 80% rated Vr applied 160 Average Power Loss - (Watts) Allowable Case Temperature (°C) 180 140 120 100 DC 80 60 40 see note (2) 20 0 180° 120° 90° 60° 30° 80 60 DC RMS Limit 40 20 0 0 50 100 150 200 250 0 300 Average Forward Current - IF(AV) (A) 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 30 Fig. 6 - Forward Power Loss Characteristics 10000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKDS201/ 045P Bulletin I27294 12/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR KD S 20 1 1 2 3 4 5 / 045 P 6 7 1 - International Rectifier 2 - Circuit Configuration 3 - S = Schottky Diode 4 - Average Rating (x10) 5 - Product Silicon Identification 6 - Voltage Rating (045 = 45V) 7 - Lead-Free KC = Add-A-Pak - 2 diodes in Series www.irf.com 5 IRKDS201/ 045P Bulletin I27295 12/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/06 6 www.irf.com