DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D184 BZA109 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Oct 27 File under Discrete Semiconductors, SC01 1997 Dec 01 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 FEATURES DESCRIPTION • ESD rating >8 kV, according to IEC1000-4-2 9-fold monolithic transient voltage suppressor in an SO20; SOT163-1 surface mount package. The device is ideal in situations where board space is a premium. • SOT163-1 surface mount package • Common anode configuration • Non-clamping range 0.5 to 6.8 V PINNING PIN 1 to 5 common anode (GND) 7 to 10 input (IN6 to IN9) 11 to 14 output (OUT9 to OUT6) 16 to 20 output (OUT5 to OUT1) handbook, 4 columns APPLICATIONS • For 9-bit wide undershoot/ overshoot clamping and fast ESD transient suppression in: – Computers and peripherals input (IN1 to IN5) 6 and 15 • Maximum non-repetitive peak reverse power dissipation: 25 W at tp = 1 ms • Maximum clamping voltage at peak pulse current: 10 V at IZSM = 2.5 A. DESCRIPTION IN1 1 20 OUT1 IN2 2 19 OUT2 IN3 3 18 OUT3 IN4 4 17 OUT4 IN5 5 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 16 OUT5 SO20 GND 6 15 GND IN6 7 14 OUT6 IN7 8 13 OUT7 IN8 9 12 OUT8 IN9 10 11 OUT9 – Audio and video equipment – Business machines – Communication systems – Medical equipment. MBK268 Fig.1 Pin configuration for SO20 (SOT163-1) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Tamb = 25 °C − 20 mA IF continuous forward current Tamb = 25 °C − 100 mA IFT feed-through current Tamb = 25 °C; note 1 − 100 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.5 A Ptot total power dissipation Tamb ≤ 25 °C; note 2; see Fig.3 − 1.25 W PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 − 25 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Notes 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. 1997 Dec 01 2 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 100 K/W MAX. UNIT one or more diodes loaded ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. Per diode VZ working voltage IZ = 250 µA 6.4 6.8 7.2 V VF forward voltage IF = 100 mA − − 1.1 V VZSM non-repetitive peak reverse voltage IZSM = 2.5 A; tp = 1 ms − − 10 V IH input high current VIN = 5.25 V − − 0.5 µA rdif differential resistance IZ = 250 µA − − 100 Ω SZ temperature coefficient of working voltage IZ = 5 mA − 3 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz − − 200 pF VR = 5.25 V; f = 1 MHz − − 100 pF 1997 Dec 01 3 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 GRAPHICAL DATA MBK269 10 MBK393 2.0 handbook, halfpage handbook, halfpage Ptot IZSM (W) (A) 1.5 1.0 0.5 1 10−1 1 0 10 tp (ms) 0 50 100 150 200 Tamb (°C) One or more diodes loaded. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Power derating curve. MBK270 102 handbook, halfpage MBK272 150 handbook, halfpage PZSM Cd (pF) (W) 100 50 10 10−1 0 1 tp (ms) 10 0 2 4 VR (V) 6 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Tj = 25 °C; f = 1 MHz. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 1997 Dec 01 Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor handbook, full pagewidthESD TESTER 450 Ω RZ BZA109 RG 223/U 50 Ω coax 10× ATTENUATOR DIGITIZING OSCILLOSCOPE CH1 note 1 CZ IEC 1000-4-2 network CZ = 150 pF; RZ = 330 Ω 450 Ω input RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω DIGITIZING OSCILLOSCOPE CH2 output note 1 50 Ω Note 1: attenuator is only used for open socket high voltage measurements 1/9 BZA109 vertical scale = 100 V/Div horizontal scale = 50 ns/Div vertical scale = 10 V/Div horizontal scale = 50 ns/Div output GND input GND GND unclamped +1 kV ESD voltage waveform (IEC1000−4−2 network) clamped +1 kV ESD voltage waveform (IEC1000−4−2 network) vertical scale = 10 V/Div horizontal scale = 50 ns/Div GND GND input GND vertical scale = 100 V/Div horizontal scale = 50 ns/Div output unclamped −1 kV ESD voltage waveform (IEC1000−4−2 network) clamped −1 kV ESD voltage waveform (IEC1000−4−2 network) Fig.6 ESD clamping test set-up and waveforms. 1997 Dec 01 5 MBK273 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 APPLICATION INFORMATION Typical common anode application A 9-fold transient suppressor in an SO20; SOT163-1 package makes it possible to protect nine separate lines using only one package. Two simplified examples are shown in Figs 7 and 8. handbook, full pagewidth keyboard, terminal, printer, etc. FUNCTIONAL DECODER A B C D E F G H I I/O BZA109 GND MBK274 Fig.7 Computer interface protection. VDD handbook, full pagewidth VGG address bus RAM ROM data bus I/O CPU CLOCK control bus 4/9 BZA109 GND MBK275 Fig.8 Microprocessor protection. 1997 Dec 01 6 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA109 is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 1997 Dec 01 7 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC 1997 Dec 01 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 8 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Dec 01 9 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor NOTES 1997 Dec 01 10 BZA109 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor NOTES 1997 Dec 01 11 BZA109 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/00/03/pp12 Date of release: 1997 Dec 01 Document order number: 9397 750 03108