BSO303SP H OptiMOS®-P Power-Transistor Product Summary Features V DS • single P-Channel in SO8 R DS(on),max • Enhancement mode • Logic level -30 V VGS=-4.5 V 21 mΩ VGS=-2.5 V 31 mΩ -9.1 A ID • 150°C operating temperature • Qualified according JEDEC for traget applications PG-DSO-8 • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSO303SP H PG-DSO-8 Marking 303SP Lead free Halogen free Yes packing Yes dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Value Symbol Conditions ID Unit ≤10 secs steady state T A=25 °C -9.1 -7.2 T A=70 °C -7.1 -5.8 T A=25 °C -8.9 -7.2 T A=70 °C -7.1 -5.8 A A Pulsed drain current2) I D,pulse T A=25 °C2) -36 Avalanche energy, single pulse E AS I D= -9.1 A, R GS=25 Ω 97 mJ Gate source voltage V GS ±20 V Power dissipation P tot Operating and storage temperature T j, T stg ESD class T A=25 °C1) 1.56 -55 ... 150 JESD22-A114 HBM W °C 1B (500V - 1 kV) 260 Soldering temperature °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.1 2.50 page 1 2010-05-12 BSO303SP H Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 50 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-100 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-30 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-7.8 A - 22 31 mΩ Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-9.1 A - 15 21 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-7.3 A 12 19 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 2 2010-05-12 BSO303SP H Parameter Values Symbol Conditions Unit min. typ. max. - 1750 2330 - 470 625 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-25 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 390 580 Turn-on delay time t d(on) - 10 15 Rise time tr - 11 17 Turn-off delay time t d(off) - 42 63 Fall time tf - 33 50 Gate to source charge Q gs - -4.8 -6.4 Gate charge at threshold Q g(th) - -2.6 -3.5 Gate to drain charge Q gd - -14 -21 Switching charge Q sw - -16 -24 Gate charge total Qg - -40 -54 Gate plateau voltage V plateau - -2.7 - Output charge Q oss - -14 -19 - - -2.1 - - -36.5 V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω pF ns Gate Charge Characteristics 3) V DD=-24 V, I D=9.1 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-9.1 A, T j=25 °C - -0.88 -1.2 V Reverse recovery time t rr V R=15 V, I F=-9.1 A, di F/dt =100 A/µs - 19 24 ns Reverse recovery charge Q rr - 9 11 nC 2) 3) Rev. 1.1 T A=25 °C A See figure 3 See figure 16 for gate charge parameter definition page 3 2010-05-12 BSO303SP H 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); |V GS|≥10 V; t p≤10 s 10 3 2.5 8 2 -I D [A] P tot [W] 6 1.5 4 1 2 0.5 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 160 T A [°C] 102 100 100 10 µs 1 µs 0.5 100 µs 101 101 10 0.2 10 0.1 1 ms 100 0.1 10-2 0.01 DC 0.1 10 Rev. 1.1 10 ms 1 10-1 0.05 Z thJS [K/W] -I D [A] limited by on-state resistance 1 -1 10 10 0 -V DS [V] 10 100 1 10 2 page 4 0.02 100 1 0.01 10-1 0.1 10-2 0.01 single pulse 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2010-05-12 BSO303SP H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 40 2.5 V -10 V 35 -3 V -2.7 V -4.5 V -3.2 V -3.5 V 50 30 -3.5 V 40 20 -3.2 V 15 -3 V R DS(on) [mΩ] -I D [A] 25 30 -4.5 V 20 -10 V 10 -2.7 V 10 5 -2.5 V -2.3 V 0 0 0 1 2 0 3 10 20 30 40 -I D [A] -V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 40 40 30 30 g fs [S] -I D [A] parameter: T j 20 10 20 10 C °150 C °25 0 0 0 1 2 3 4 -V GS [V] Rev. 1.1 0 10 20 30 -I D [A] page 5 2010-05-12 BSO303SP H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-9.1 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-100 µA 2.5 28 98 % 24 2 max. -V GS(th) [V] R DS(on) [mΩ] 20 16 12 typ. typ. 1.5 min. 1 8 0.5 4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 10000 25 °C, 98% 25 °C, typ 103 10 1000 Coss 0.1 100 0 5 10 15 20 25 30 0 0.5 1 1.5 2 -V SD [V] -V DS [V] Rev. 1.1 150 °C, 98% 1 Crss 102 150 °C, typ I F [A] C [pF] Ciss page 6 2010-05-12 BSO303SP H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-9.1 A pulsed parameter: T j(start) parameter: V DD 10 10 25 9 6 100 8 125 15 24 7 -I AV [A] -V GS [V] 6 5 4 3 2 1 1 0 1 10 100 1000 0 10 20 30 40 -Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 36 V GS 34 Qg 32 -V BR(DSS) [V] 30 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.1 page 7 2010-05-12 BSO303SP H Package Outline P-DSO-8: Outline Rev. 1.1 page 8 2010-05-12 BSO303SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2010-05-12