NPN Silicon AF Switching Transistor BCX 12 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: BCX 13 (PNP) ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 12 BCX 12 Q62702-C25 C TO-92 B E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 125 V Collector-base voltage VCB0 125 Emitter-base voltage VEB0 5 Collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient Rth JA ≤ 200 Junction - case2) Rth JC ≤ 135 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BCX 12 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CE0 125 – – V Collector-base breakdown voltage IC = 100 µA, IB = 0 V(BR)CB0 125 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBS 5 – – Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 10 nA µA Emitter cutoff current VEB = 4 V IEB0 – – 100 nA DC current gain1) IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V hFE 25 50 63 40 – – – – – – – – Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat – – 1.0 Base-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VBEsat – – 1.6 Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT – 100 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 10 – pF – V AC characteristics 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 BCX 12 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VC = 1 V Collector cutoff current ICB0 = f (TA) VCB = VCBmax Semiconductor Group 3 BCX 12 DC current gain hFE = f (IC) VCE = 1 V Transition frequency fT = f (IC) f = 20 MHz, VCE = 5 V, TA = 25 ˚C Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Semiconductor Group 4