INFINEON PTFB211503EL

PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
• Enhanced for use in DPD error correction systems
40
-25
35
30
-35
-40
25
20
IMD Up
-45
ACPR
-50
15
10
IMD Low
Efficiency (%)
IMD (dBc)
• Broadband internal matching
-20
Efficiency
5
-55
-60
0
31
33
35
37
39
41
43
45
47
PTFB211503FL
H-34288-4/2
Features
Two-carrier WCDMA 3GPP Drive-up
-30
PTFB211503EL
H-33288-6
49
Output Power (dBm)
• Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efficiency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
18
—
dB
Drain Efficiency hD
—
29
—
%
Adjacent Channel Power Ratio
ACPR
—
–36
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurement (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
16.5
18
—
dB
Drain Efficiency hD
39
40
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.08
—
W
Operating Gate Voltage
VDS = 30 V, IDQ = 1.2 A
VGS
1.6
2.1
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage VDSS
65
V
Gate-Source Voltage VGS
–6 to +10
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 150 W CW)
RqJC
0.27
°C/W
Ordering Information
Type and Version
Package Outline
Package Description Shipping
PTFB211503EL V1 H-33288-6 Slotted flange, single-ended Tray
PTFB211503EL V1 R250
H-33288-6 Slotted flange, single-ended Tape & Reel 250 pcs
PTFB211503FL V2
H-34288-4/2 Earless flange, single-ended
Tray
PTFB211503FL V2 R250
H-34288-4/2
Earless flange, single-ended
Tape & Reel 250 pcs
Data Sheet 2 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84MHz
-25
19
2170 Low
2170 Up
2140 Low
2140 Up
2110 Low
2110 Up
-40
Gain
18
-45
30
17
20
16
-55
15
31
33
35
37
39
41
43
45
47
49
35
37
39
41
43
45
47
49
Output Power (dBm)
Single-carrier WCDMA Drive-Up
Single-carrier WCDMA, 3GPP Broadband
VDD = 30 V, IDQ = 1.20 A, PO UT = 40 W
35
-30
30
Efficiency
-35
25
-40
20
ACP Up
-45
15
-50
10
-55
5
ACP Low
-60
Gain (dB), Efficiency (%)
-25
60
Drain Efficiency (%)
40
0
33
35
37
39
41
43
45
47
0
50
-10
IRL
40
ACP
Efficiency
30
-20
Gain
-30
20
-40
10
49
-50
2080
Output Power (dBm)
Data Sheet 33
Output Power (dBm)
-20
31
0
31
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz
ACP (dBc)
10
Efficiency
-50
IRL (dB), ACP up (dBc)
-35
Gain (dB)
Drain Efficiency (%)
-30
40
Drain Efficiency (%)
VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
2100
2120
2140
2160
2180
2200
Frequency (MHz)
3 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
Two-tone Drive-up
20
50
-15
50
19
40
-25
40
30
17
20
Efficiency
16
15
40
42
44
46
48
50
52
IMD (dBc)
Gain
18
Efficiency (%)
Gain (dB)
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
Efficiency
-35
-45
10
-55
0
-65
54
20
IMD3
42
44
IRL
-15
45
-20
-25
Efficiency
35
-30
-35
IMD3
-40
Gain
-45
15
2090
2110
2130
2150
2170
2190
2140MHz
-30
2110MHz
-40
-50
-60
-70
2210
41
43
45
47
49
51
53
Output Power, PEP (dBm)
Frequency (MHz)
Data Sheet 54
2170MHz
-50
2070
52
-20
IMD (dBc)
-10
Return Loss (dB), IMD (dBc)
Gain (dB), Efficiency (%)
-5
55
20
50
VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz
60
25
48
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, PO UT = 63 W
30
46
Output Power, PEP (dBm)
Two-tone Broadband Performance
40
10
0
40
Output Power, PEP (dBm)
50
30
Efficiency (%)
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
4 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW
Gain & Efficiency vs. Output Power
CW Performance
Gain vs. Output Power
IDQ = 1.40 A
17
IDQ = 1.20 A
Gain (dB)
Power Gain (dB)
18
IDQ = 0.80 A
19
60
18
50
17
40
Gain
16
30
16
15
15
Efficiency
+25ºC
+85ºC
–10ºC
20
14
41
43
45
47
49
51
53
10
42
Output Power (dBm)
Drain Efficiency (%)
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
VDD = 30 V, ƒ = 2170 MHz
44
46
48
50
52
Output Power (dBm)
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-20
3rd Order
IMD (dBc)
-30
5th
-40
7th
-50
-60
-70
40
45
50
55
Output Power, PEP (dBm)
Data Sheet 5 of 14
Rev. 04, 2011-03-07
3
RA T
OR
--->
S
0.2
0.1
G
0.0
Z Load
D LOA D S T OW AR
NGT H
D
Z0 = 50 Ω
0.1
- W AV E LE NGT H
S T OW
A
RD G
E NE
0. 2
Broadband Circuit Impedance
0.
Confidential, Limited Internal Distribution
Z Source
PTFB211503EL
PTFB211503FL
Z Load
MHz
R
jX
R
jX
2200
2.06
–6.08
2.19
–4.73
2170 2.17
–6.33
2.19
–4.82
2140
2.30
–6.59
2.20
–4.91
2110
2.43
–6.86
2.21
–5.00
2080
2.58
–7.14
2.22
–5.09
Z Source
0. 1
2200 MHz
V EL E
Z Load W
2080 MHz
WA
<---
Z Source W
Frequency
0. 2
See next page for reference circuit information
0.
4
0.
5
0.
45
0.
05
0. 3
Data Sheet 6 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
PTFB211503EL/FL_INPUT
Confidential, Limited Internal Distribution
Reference Circuit
C801
1000 pF
S1
8
C802
1000 pF
C803
1000 pF
4
R801
1200 Ohm
2
Out
NC
NC
2
3
6
C
S
B
3
1
7
5
S2
4
1
R802
1300 Ohm
In
R804
100 Ohm
E
R805
10 Ohm
S3
TL114
3
TL118
R803
10 Ohm
TL138
R101
10 Ohm
TL128
2
TL110
TL124
1
3
TL119
RF_IN
TL121
C106
2.2 pF
TL115
TL104
C101
10 pF
TL120
TL130
TL127 TL134 TL135
TL113 TL102
TL131
TL111 TL105
TL132
2
3
1
C107
8.2 pF
TL137
TL129 TL109
2
3
1
TL106
C103
4710000 pF
2
TL125
2
TL112
3
1
4
4
GATE DUT
(Pin G)
TL133
PTFB211503EL/FL_OUTPUT
3
C105
0.6 pF
1
TL116
TL136
C104
4710000 pF
2
C102
10 pF
3
1
TL140
TL103
TL122
TL117
R104
10 Ohm
TL126
TL107
TL123
TL139
TL101
3
2
1
TL108
b 2 1 1 5 0 3 e f l _ b d i n _ 0 8 - 1 9 - 2 0 1 0
Reference circuit input schematic for ƒ = 2170 MHz
C204
10000000 pF
TL218
TL214
TL223
TL220
TL221
1
2
1
3
C202
2200000 pF
DUT
(Pin V)
DRAIN DUT
(Pin D)
TL203
TL209
TL202
TL215
2
1
TL217
3
2
1
VDD
C203
10000000 pF
TL212
TL201
2
3
C201
1000000 pF
TL206
TL222
TL219
3
TL229
1
TL208
TL204
TL210
C207
8.2 pF
TL211
TL205 TL207
RF_OUT
2
3
C208
0.5 pF
C210
2200000 pF
DUT
(Pin V)
TL213
TL226
C209
10000000
C206
1000000 pF
TL228
2
TL227
3
1
2
TL231
3
1
2
TL230
1
TL216
TL225
b 2 1 1 5 0 3 e f l _ b d o u t _ 0 8 - 1 9 - 2 0 1 0
TL224
3
2
1
3
C205
10000000 pF
VDD
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet 7 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT
PTFB211503EL or PTFB211503FL
PCB
0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Input
TL101, TL129
0.095 λ, 54.17 Ω
W = 1.016, L = 8.001
W = 40, L = 315
TL102
0.016 λ, 31.24 Ω
W = 2.286, L = 1.270
W = 90, L = 50
TL103
0.026 λ, 54.17 Ω
W = 1.016, L = 2.159
W = 40, L = 85
TL104
0.032 λ, 47.12 Ω
W = 1.270, L = 2.692
W = 50, L = 106
TL105
0.005 λ, 6.67 Ω
W = 13.970, L = 0.381
W = 550, L = 15
TL106
W1 = 13.970, W2 = 1.016, W3 = 13.970, W4 = 1.016 W1 = 550, W2 = 40, W3 = 550, W4 = 40
TL107, TL108, TL109
W = 1.016
W = 40
TL110, TL139
0.012 λ, 54.17 Ω
W1 = 1.016, W2 = 1.016, W3 = 1.016
W1 = 40, W2 = 40, W3 = 40
TL111 (taper)
0.006 λ, 6.67 Ω / 8.37 Ω
W1 = 13.970, W2 = 10.922, L = 0.483
W1 = 550, W2 = 430, L = 19
TL112
W1 = 17.780, W2 = 12.700
W1 = 700, W2 = 500
TL113
W1 = 1.270, W2 = 2.286
W1 = 50, W2 = 90
TL114
0.031 λ, 34.72 Ω
W = 1.981, L = 2.540
W = 78, L = 100
TL115
0.027 λ, 63.89 Ω
W = 0.762, L = 2.286
W = 30, L = 90
TL116
0.096 λ, 63.89 Ω
W = .762, L = 8.136
W = 30, L = 320
TL117
0.029 λ, 54.17 Ω
W = 1.016, L = 2.451
W = 40, L = 97
TL118
0.018 λ, 54.17 Ω
W = 1.016, L = 1.524
W = 40, L = 60
TL119
0.021 λ, 54.17 Ω
W = 1.016, L = 1.727
W = 40, L = 68
TL120
0.026 λ, 54.17 Ω
W = 1.016, L = 2.159
W = 40, L = 85
TL121, TL122
0.002 λ, 54.17 Ω
W = 1.016, L = 0.127
W = 40, L = 5
TL123, TL124
0.030 λ, 54.17 Ω
W = 1.016, L = 2.540
W = 40, L = 100
TL125
0.053 λ, 6.67 Ω
W = 13.970, L = 4.064
W = 550, L = 160
TL126
0.012 λ, 54.17 Ω
W = 1.016, L = 1.021
W = 40, L = 40
TL127
0.134 λ, 47.12 Ω
W = 1.270, L = 11.151
W = 50, L = 439
TL128
0.012 λ, 54.17 Ω
W = 1.016, L = 1.016
W = 40, L = 40
TL130, TL133
0.000 λ, 144.35 Ω
W = 0.025, L = 0.025
W = 1, L = 1
W1 = 10.922, W2 = 0.025, W3 = 10.922
W4 = 0.025 W1 = 430, W2 = 1, W3 = 430,
W4 = 1
TL131
TL132, TL135
0.000 λ, 8.37 Ω
W = 10.922, L = 0.000
W = 430, L = 0
TL134 (taper)
0.033 λ, 8.37 Ω / 47.12 Ω
W1 = 10.922, W2 = 1.270, L = 2.540
W1 = 430, W2 = 50, L = 100
TL136, TL137
0.012 λ, 63.89 Ω
W1 = 0.762, W2 = 0.762, W3 = 1.016
W1 = 30, W2 = 30, W3 = 40
TL138
0.012 λ, 54.17 Ω
W1 = 1.016, W2 = 1.270, W3 = 1.016
W1 = 40, W2 = 50, W3 = 40
TL140
0.021 λ, 63.89 Ω
W = 0.762, L = 1.778
W = 30, L = 70
table continued on page 9
Data Sheet 8 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Output
TL201 (taper) 0.074 λ, 5.33 Ω / 39.51 Ω W1 = 17.780, W2 = 1.651, L = 5.613
W1 = 700, W2 = 65, L = 221
TL202 (taper) 0.010 λ, 4.84 Ω / 5.33 Ω W1 = 19.685, W2 = 17.780, L = 0.787
W1 = 775, W2 = 700, L = 31
TL203
W1 = 12.700, W2 = 17.780
W1 = 500, W2 = 700
TL204
W1 = 1.651, W2 = 2.540
W1 = 65, W2 = 100
TL205
W1 = 1.270, W2 = 2.540
W1 = 50, W2 = 100
TL206
0.000 λ, 5.33 Ω W = 17.780, L = 0.025
W = 700, L = 1
TL207
0.047 λ, 47.12 Ω W = 1.270, L = 3.886
W = 50, L = 153
TL208
0.021 λ, 39.51 Ω W = 1.651, L = 1.753
W = 65, L = 69
TL209
0.057 λ, 4.84 Ω W = 19.685, L = 4.318
W = 775, L = 170
TL210, TL211
0.016 λ, 28.85 Ω W = 2.540, L = 1.270
W = 100, L = 50
TL212
0.035 λ, 39.51 Ω W = 1.651, L = 2.896
W = 65, L = 114
TL213
0.032 λ, 16.90 Ω W = 4.928, L = 2.540
W = 194, L = 100
TL214
0.032 λ, 17.05 Ω W = 4.877, L = 2.540
W = 192, L = 100
TL215, TL231
0.032 λ, 25.04 Ω W1 = 3.048, W2 = 3.048, W3 = 2.540
W1 = 120, W2 = 120, W3 = 100
TL216, TL217
0.095 λ, 25.04 Ω W = 3.048, L = 7.645
W = 120, L = 301
W = 3.048
W = 120
TL218, TL230
TL219, TL225
0.054 λ, 25.04 Ω W1 = 3.048, W2 = 3.048, W3 = 4.318
W1 = 120, W2 = 120, W3 = 170
TL220, TL221
0.029 λ, 25.04 Ω W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 = 90
TL222, TL224
0.067 λ, 25.04 Ω W = 3.048, L = 5.359
W = 120, L = 211
TL223, TL226
0.010 λ, 25.04 Ω W = 3.048, L = 0.762
W = 120, L = 30
TL227, TL228
0.029 λ, 25.04 Ω W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 =90
TL229
0.022 λ, 39.51 Ω W1 = 1.651, W2 = 1.651, W3 = 1.778
W1 = 65, W2 = 65, W3 = 70
Data Sheet 9 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB211503EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .030
(60)
RO4350, .030
VDD
R804 C801 C802
(60)
C204
R801
S3
VDD
C803
R802
+
C201
R805
+
S2
10 µF
C202
S1
R803
R101
C101
C203
C106
C103
RF_IN
C107
RF_OUT
C207
C208
C104
C102
C105
R104
C209
C210
+
10 µF
C206
VDD
C205
PTFB211503_OUT_02
PTFB211503_IN_02
b 2 1 1 5 0 3 e f l _ C D _ 1 1 - 1 0 - 2 0 1 0
Reference circuit assembly diagram (not to scale)
Data Sheet 10 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component Information
Component Description
Suggested Manufacturer
P/N C101, C102
Chip capacitor, 10 pF
ATC
ATC100A100FW150XB
C103, C104
Chip capacitor, 4.71 μF
Digi-Key
493-2372-2-ND
C105
Chip capacitor, 0.6 pF
ATC
ATC100B0R6BW500XB
C106
Chip capacitor, 2.2 pF
ATC
ATC100B2R2BW500XB
C107
Chip capacitor, 8.2 pF
ATC
ATC100B8R2BW500XB
C801, C802, C803
Capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
R101, R104, R803, R805
Resistor, 10 W
Digi-Key
P10ECT-ND
R801
Resistor, 1200 W
Digi-Key
P1.2KGCT-ND
R802
Resistor, 1300 W
Digi-Key
P1.3KGCT-ND
R804
Resistor, 100 W
Digi-Key
P100ECT-ND
S1
Voltage Regulator
Digi-Key
LM78L05ACM-LD
S2
Transistor Digi-Key
BCP5616TA-ND
S3
Potentiometer, 2k W
Digi-Key
3224W-202ECT-ND
C201, C206
Chip capacitor, 1 μF
Digi-Key
445-1411-2-ND
C202, C210
Chip capacitor, 2.2 μF
Digi-Key
445-1447-2-ND
C203, C209
Capacitor, 10 μF
Digi-Key
281M5002106K
C204, C205
Capacitor, 10 μF
Digi-Key
587-1818-2-ND
C207
Chip capacitor, 8.2 pF
ATC
ATC100B8R2BW500XB
C208
Chip capacitor, 0.5 pF
ATC
ATC100B0R5BW500XB
Input
Output
Data Sheet 11 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-6
45° X 2.032
[45° X .080]
4X 30°
4X R1.524
[R.060]
2X 5.080
[.200] (2 PLS)
4X 1.143
[.045] (4 PLS)
V
D
4.889±.510
[.192±.020]
V
S
CL
2X R1.626
[R.064]
G
E
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
F
H -33288 - 6_ po _02 -18 - 2010
CL
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
1.575
[.062] (SPH)
4.039 +.254
–. 127
010
[.159 +.
–. 005 ]
CL
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
12 of 14
Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
D
V
9.779
[.385]
9.398
[.370]
C
L
4X R0.508+.381
-.127
R.020+.015
-.005
19.558±.510
[.770±.020]
G
]
[
4.889±.510
[.192±.020]
2X 12.700
[.500]
4.039+.254
-.127
.159+.010
-.005
22.352±.200
[.880±.008]
[
]
C 66065-A0003- C743- 01-0027 H- 34288- 4_
2 .dwg
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 13 of 14
Rev. 04, 2011-03-07
PTFB211503EL V1 / PTFB211503FL V2
Confidential, Limited Internal Distribution
Revision History:
2011-03-07
Previous Version: 2010-11-10, Data Sheet
Page
Subjects (major changes since last revision)
1
Updated features
2
Corrected typo Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2011-03-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet 14 of 14
Rev. 04, 2011-03-07