PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220081M Package PG-SON-10 Features Two-tone Drive-up • Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz -10 Efficiency -30 40 30 IMD 3rd -40 20 IMD 5th -50 -60 34 35 36 37 38 39 40 Efficiency (%) -20 IMD (dBc) • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB 50 • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB 10 • Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power 0 • Integrated ESD protection : Human Body Model, Class 2 (minimum) 41 • Excellent thermal stability Output Power, PEP (dBm) • Pb-free and RoHS compliant RF Characteristics Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 17 — dB Drain Efficiency hD — 38 — % Intermodulation Distortion IMD — –31 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 20.7 — dB Drain Efficiency hD — 39 — % Intermodulation Distortion IMD — –30 — dBc Input Return Loss IRL — 20 — dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 1.10 — W Operating Gate Voltage VDS = 28 V, IDQ = 100 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 175 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 8 W DC ) RqJC 4.2 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature 3 IPC/JEDEC J-STD-020 260 Unit °C Ordering Information Type Package Outline Package Description Shipping PTFA220081M V4 PG-SON-10 Molded plastic, SMD Tape & Reel, 500 pcs Data Sheet 2 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Typical Performance, 940 MHz Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 100 mA, ƒ = 940 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz VDD = 28 V, IDQ = 100 mA, ƒ = 940 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz 21.5 60 0 55 20.5 40 20.0 30 19.5 20 Drain Efficiency (%) Gain (dB) 50 -10 45 IMD Up -20 35 IMD Low -30 25 ACPR -40 15 Drain Efficiency (%) Gain 21.0 IMD & ACPR (dBc) Efficiency Efficiency 19.0 -50 10 30 31 32 33 34 35 36 37 38 5 30 39 31 32 33 Output Power (dBm) 20.8 60 20.4 20.5 40 20.0 30 19.5 20 Efficiency 19.0 Gain (dB) Power Gain (dB) 70 50 Gain 33 34 35 36 37 38 39 40 41 39 Gain 60 20.0 50 Efficiency 19.6 40 920 MHz 940 MHz 960 MHz 30 18.8 42 20 34 35 36 37 38 39 40 41 Output Power (dBm) Output Power (dBm) Data Sheet 38 70 19.2 10 32 37 VDD = 28 V, IDQ = 100 mA Efficiency (%) VDD = 24 V VDD = 28 V VDD = 32 V 21.0 36 Power Sweep, CW Gain & Efficiency vs. Output Power IDQ = 100 mA, ƒ = 940 MHz 21.5 35 Output Power (dBm) CW Gain & Efficiency vs. Output Power & VDD 22.0 34 Drain Efficiency (%) 29 3 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Typical Performance, 940 MHz (cont.) Two-tone Drive-up Two-tone Gain & Input Return Loss VDD = 28 V, IDQ = 150 mA, ƒ1 = 939.5 MHz, ƒ2 = 940.5 MHz VDD = 28 V, IDQ = 100 mA, Spacing = 100 kHz, PEP = 8 W 50 21.0 -6 20.5 Gain 20 30 19 20 Power Gain (dB) 40 Efficiency (%) Gain (dB) 21 Efficiency 18 10 33 34 35 36 37 38 39 40 -9 Gain 20.0 -12 19.5 -15 19.0 -18 18.5 -21 IRL 18.0 -24 17.5 -27 17.0 41 -30 880 Output Power, PEP (dBm) Input Return Loss (dB) 22 900 920 940 960 980 1000 Frequency (MHz) Broadband Circuit Impedance Z0 = 50 Ω D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 869 1.54 7.20 14.11 9.10 894 1.49 6.60 14.91 8.70 920 1.59 5.70 13.83 9.10 940 1.61 5.10 10.83 10.70 960 1.61 5.10 13.34 9.80 1930 1.91 –2.10 5.59 6.20 1990 2.11 –1.70 4.21 5.20 2110 2.45 –1.00 4.43 5.10 2170 2.30 –1.00 4.25 5.60 Data Sheet 4 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 920 – 960 MHz PORT 3 R103 2000 Ohm S5 8 C103 1000 pF TL104 TL105 1 2 S2 L1 22 nH TL106 TL108 3 R104 10 Ohm 3 4 In Out 2 1 NC NC 3 6 7 5 C102 1000 pF S3 VDD 4 R106 510 Ohm C101 1000 pF R102 1200 Ohm S4 2 C 3 E 4 1 B TL109 R101 1300 Ohm R107 10 Ohm TL113 C105 68 pF TL102 TL101 RF_IN 2 TL114 TL111 1 2 3 TL112 1 2 TL103 R105 1.3 Ohm TL110 TL107 2 3 1 3 GATE_DUT 1 a080304m_960 MHz_bdin_06-03-2010 3 4 C106 5.6 pF C104 16 pF C107 16 pF Reference circuit input schematic for ƒ = 920 – 960 MHz TL205 TL204 TL218 TL224 2 1 3 TL206 TL225 C205 4710000 pF 2 TL213 3 1 TL216 TL217 C204 10000000 pF TL223 2 3 1 C202 68 pF VDD TL202 2 3 1 TL203 TL214 TL201 2 1 TL215 a080304m_960 MHz_bdout_06-03-2010 3 2 3 1 TL207 R201 0 Ohm TL208 TL212 TL211 DRAIN_DUT TL209 2 TL210 3 TL222 1 TL221 1 2 3 TL219 C203 68 pF TL220 RF_OUT C201 3.6 pF Reference circuit output schematic for ƒ = 920 – 960 MHz Data Sheet 5 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 920 – 960 MHz (cont.) Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.004 λ, 51.98 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL102 0.024 λ, 51.98 Ω W = 1.087, L = 4.445 W = 43, L = 175 TL103 0.011 λ, 51.98 Ω W = 1.087, L = 2.057 W = 43 L = 81 W = 1.524 W = 60 TL104 TL105 0.008 λ, 54.17 Ω W = 1.016, L = 1.524 W = 40, L = 60 TL106 0.027 λ, 41.75 Ω W = 1.524, L = 5.080 W = 60, L = 200 TL107 0.010 λ, 25.04 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL108 0.003 λ, 41.75 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL109 0.007 λ, 41.75 Ω W = 1.524, L = 1.270 W = 60, L = 50 TL110 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30 TL111, TL112 0.005 λ, 51.98 Ω W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40 TL113 0.017 λ, 51.98 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL114 0.070 λ, 51.98 Ω W = 1.087, L = 13.259 W = 43, L = 522 Output TL201 0.008 λ, 41.75 Ω W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60 TL202, TL225 0.007 λ, 47.12 Ω W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50 TL203 0.060 λ, 47.12 Ω W = 1.270, L = 11.361 W = 50, L = 447 TL204 TL205 0.007 λ, 4.74 Ω TL206 W1 = 0.020, W2 = 0.020, Offset = 0.007 W1 = 20, W2 = 780, Offset = 280 W = 20.119, L = 1.270 W = 792, L = 50 W1 = 0.001, W2 = 0.001, Offset = 0.011 W1 = 1, W2 = 50, Offset = 416 TL207 0.003 λ, 41.75 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL208 0.008 λ, 41.75 Ω W = 1.524, L = 1.524 W = 60, L = 60 TL209 0.004 λ, 25.04 Ω W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL210 TL211 0.010 λ, 25.04 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL212 0.007 λ, 63.89 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL213 TL214 0.044 λ, 41.75 Ω W1 = 0.001, W2 = 0.005, Offset = -0.002 W1 = 1, W2 = 208, Offset = -79 W = 1.524, L = 8.204 W = 60, L = 323 TL215 0.007 λ, 41.75 Ω W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50 TL216 0.007 λ, 47.12 Ω W = 1.270, L = 1.267 W = 50, L = 50 TL217 0.032 λ, 47.12 Ω W = 1.270, L = 5.918 W = 50, L = 233 TL218 0.032 λ, 15.92 Ω W = 5.283, L = 5.687 W = 208, L = 224 TL219 0.016 λ, 51.98 Ω W = 1.087, L = 2.946 W = 43, L = 116 TL220 0.017 λ, 51.98 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL221 0.004 λ, 51.98 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL222 0.104 λ, 51.98 Ω W = 1.087, L = 19.736 W = 43, L = 777 TL223 0.011 λ, 47.12 Ω W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80 TL224 0.000 λ, 144.35 Ω W1 = 0.025, W2 = 0.025, W3 = 0.025 W1 = 1, W2 = 1, W3 = 1 Data Sheet 6 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 920 – 960 MHz (cont.) R101 C103 C101 VDD C102 C205 R102 R103 C204 S4 S5 C202 R106 S3 R104 S2 R107 R105 R201 L1 DUT RF_IN C105 C106 C104 RF_OUT C201 C107 PTFA220081M_01_CUS 960 MHz RO4350, .020 C203 (73) � � � �� �� � � � � � � � � � � � � �� � �� � Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Data Sheet 7 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 920 – 960 MHz (cont.) Circuit Assembly Information DUT PTFA220081M LDMOS Transistor PCB LTN/PTFA220081M–9 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Component Description Suggested Manufacturer P/N Input C101, C102, C103 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND C104, C107 Chip capacitor, 16 pF ATC ATC100A160JW150X C105 Chip capacitor, 68 pF ATC ATC100A680JW150X C106 Chip capacitor, 5.6 pF ATC ATC100A5R6CW150X L1 Inductor, 22 nH ATC ATC0805WL22JT R101 Resistor, 1300 W Digi-Key P1.3KGCT-ND R102 Resistor, 1200 W Digi-Key P1.2KGCT-ND R103 Resistor, 2000 W Digi-Key P2.0KECT-ND R104 Resistor, 10 W Digi-Key P10ECT-ND R105 Resistor, 1.3 W Digi-Key P1.3GET-ND R106 Resistor, 510 W Digi-Key P510ECT-ND R107 Resistor, 10 W Digi-Key P10GCT-ND S2 EMI filter, 2 - 4 A, 0.1 - 2.2 μF Murata NFM18PS105R0J3 S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Transistor Digi-Key BCP56 S5 Voltage Regulator National Semiconductor LM7805 Output C201 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X C202, C203 Chip capacitor, 68 pF ATC ATC100A680JW150X C204 Capacitor, 10 µF Digi-Key 587-1352-1-ND C205 Chip capacitor, 4.71 µF Digi-Key PCS3475CT-ND R201 Resistor, 0 W Digi-Key P0.0ECT-ND Data Sheet 8 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Typical Performance, 2140 MHz Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz, 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz -10 17.0 30 16.5 20 16.0 10 Efficiency 15.5 0 27 28 29 30 31 32 33 34 35 IMD Up -20 0 27 28 29 65 45 15 30 14 25 17.5 37 38 39 40 50 17.0 40 16.5 30 Efficiency VDD = 24 V VDD = 28 V VDD = 32 V 20 15.5 10 32 41 33 34 35 36 37 38 39 40 41 Output Power (dBm) Output Power (dBm) Data Sheet 36 Gain 16.0 20 13 36 35 60 Power Gain (dB) 50 35 35 34 18.0 55 40 34 33 60 16 33 32 IDQ = 100 mA, ƒ = 2140 MHz 17 32 31 CW Gain & Effciency vs. Output Power & VDD Drain Efficiency (%) Gain (dB) 18 30 Output Power (dBm) Gain +85°C Gain +20°C Gain -30°C Ef f iciency +85°C Ef f iciency +20°C Ef f iciency -30°C 19 10 ACPR -50 VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz 20 20 -40 36 CW Gain & Efficiency vs. Output Power 21 30 IMD Low -30 Output Power (dBm) 22 40 Efficiency Drain Efficiency (%) 40 50 Efficiency (%) Gain (dB) 0 IMD & ACPR (dBc) Gain 17.5 50 Drain Efficiency (%) 18.0 9 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Typical Performance, 2140 MHz (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz -20 40 30 Efficiency -50 10 34 35 36 37 38 39 40 40 16.5 35 16.0 30 15.0 41 20 35 36 45 IMD3 -15 18 -20 17 -25 -30 25 -35 IMD5 -40 15 10 2120 2160 2200 Gain (dB) 30 2080 40 41 0 -2 Gain 16 -4 15 -6 14 -8 RL -45 13 -50 12 -10 -12 2040 2240 Frequency (MHz) Data Sheet 39 VDD = 28 V, IDQ = 100 mA, Average PEP = 8 W, Spacing = 100 kHz IMD (dBc) Efficiency (%) Efficiency 2040 38 Two-tone Broadband Gain & Return Loss vs. Frequency VDD = 28 V, IDQ = 100 mA, Average PEP = 8 W, Spacing = 100 kHz 20 37 Output Power, PEP (dBm) Two-tone Broadband Efficiency & IMD vs. Frequency 35 25 Efficiency Output Power, PEP (dBm) 40 45 17.0 15.5 IMD3 33 Gain 17.5 20 -40 50 Return Loss (dB) -30 18.0 Efficiency (%) 50 Gain (dB) -10 Efficiency (%) IMD (dBc) VDD = 28 V, IDQ = 100 mA, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz 2080 2120 2160 2200 2240 Frequency (MHz) 10 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Typical Performance, 2140 MHz (cont.) Power Sweep, CW Gain & Efficiency vs. Output Power Two-tone Gain vs. Output Power VDD = 28 V, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz VDD = 28 V, IDQ = 100 mA 17.5 Gain (dB) Power Gain (dB) IDQ = 120 mA 17.5 IDQ = 100 mA 17.0 IDQ = 80 mA 16.5 17.0 55 16.5 45 16.0 35 Efficiency 2110 MHz 2140 MHz 2170 MHz 15.5 16.0 15.0 33 34 35 36 37 38 39 40 41 31 32 33 34 35 36 Intermodulation Distortion vs. Tone Spacing 15 38 39 40 41 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz, PEP = 8 W VDD = 28 V, IDQ = 100 mA, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz -20 -25 -30 37 25 Output Power (dBm) Output Power (dBm) 3rd Order 3rd Order -30 -35 IMD (dBc) IMD (dBc) 65 Gain Drain Efficiency (%) 18.0 -40 -45 5th -50 5th -40 -50 7th 7th -55 -60 0 10 20 30 40 50 60 70 80 35 37 38 39 40 41 Output Power, PEP (dBm) Tone Spacing (MHz) Data Sheet 36 11 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 2110 – 2170 MHz PORT 3 R104 2000 Ohm S5 8 C103 1000 pF TL104 TL106 1 2 S2 L1 22 nH TL105 TL108 3 R102 10 Ohm 3 4 In Out 2 1 NC NC 3 6 7 5 S3 C101 1000 pF R106 510 Ohm C102 1000 pF R103 1200 Ohm S4 2 C 3 E 4 1 B TL109 C104 6.2 pF TL101 RF_IN C106 12 pF TL102 TL111 2 TL114 TL113 1 2 3 TL115 TL112 2 3 TL103 2 C108 4.1 pF TL110 TL107 2 3 3 1 GATE_DUT 1 a080304m_2170 MHz_bdin_06-03-2010 3 4 C107 3.6 pF R101 1300 Ohm R105 10 Ohm C111 6.2 pF 1 1 C109 0.6 pF 4 4 C110 6.2 pF VDD 4 C105 6.2 pF Reference circuit input schematic for ƒ = 2110 – 2170 MHz TL216 TL215 TL205 TL223 TL224 TL217 2 TL219 3 1 C205 10000000 pF TL204 TL226 2 3 1 TL225 VDD C204 10 pF TL213 2 3 1 TL214 TL218 TL212 2 TL220 1 2 3 1 3 TL210 R201 0 Ohm TL211 C202 0.3 pF TL222 TL201 DRAIN_DUT TL202 2 TL203 3 1 TL209 TL221 a080304m_2170 MHz_bdout_06-03-2010 2 TL208 3 1 1 2 3 TL206 C201 12 pF TL207 RF_OUT C203 3.6 pF Reference circuit output schematic for ƒ = 2110 – 2170 MHz Data Sheet 12 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 2110 – 2170 MHz (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.054 λ, 51.98 W W = 1.087, L = 4.509 W = 43, L = 178 TL102 0.150 λ, 51.98 W W = 1.087, L = 12.548 W = 43, L = 494 TL103 0.027 λ, 51.98 W W = 1.087, L = 2.261 W = 43, L = 89 W = 1.524 W = 60 TL104 TL105 0.062 λ, 41.75 W W = 1.524, L = 5.080 W = 60, L = 200 TL106 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60 TL107 0.022 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70 TL108 0.006 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20 TL109 0.015 λ, 41.75 W W = 1.524, L = 1.270 W = 60, L = 50 TL110 TL111, TL113 0.012 λ, 51.98 W TL112 TL114 0.028 λ, 51.98 W TL115 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30 W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40 W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016 W1 = 43, W2 = 40, W3 = 43, W4 = 40 W = 1.087, L = 2.311 W = 43, L = 91 W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016 W1 = 43, W2 = 40, W3 = 43, W4 = 40 W = 3.048, L = 1.778 W = 120, L = 70 Output TL201 0.022 λ, 25.04 W TL202 0.010 λ, 25.04 W TL203 W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL204 0.071 λ, 47.12 W W = 1.270, L = 5.918 W = 50, L = 233 TL205 0.072 λ, 15.92 W W = 5.283, L = 5.687 W = 208, L = 224 TL206 0.230 λ, 51.98 W W = 1.087, L = 19.202 W = 43, L = 756 TL207 0.039 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129 TL208 0.012 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40 TL209 0.032 λ, 51.98 W W = 1.087, L = 2.642 W = 43, L = 104 TL210 0.006 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20 TL211 0.018 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60 TL212 0.018 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60 TL213 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50 TL214 0.035 λ, 47.12 W W = 1.270, L = 2.896 W = 50, L = 114 TL215 TL216 0.017 λ, 4.74 W TL217 W1 = 0.020, W2 = 0.020, Offset = 0.007 W1 = 20, W2 = 780, Offset = 280 W = 20.119, L = 1.270 W = 792, L = 50 W1 = 0.001, W2 = 0.005, Offset = -0.002 W1 = 1, W2 = 208, Offset = -79 TL218 0.099 λ, 41.75 W W = 1.524, L = 8.204 W = 60, L = 323 TL219 0.015 λ, 47.12 W W = 1.270, L = 1.267 W = 50, L = 50 TL220 0.015 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50 TL221 0.008 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.635 W1 = 43, W2 = 43, W3 = 25 TL222 0.015 λ, 63.89 W W = 0.762, L = 1.270 W = 30, L = 50 W1 = 0.001, W2 = 0.001, Offset = 0.011 W1 = 1, W2 = 50, Offset = 416 TL223 Table continued next page Data Sheet 13 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 2110 – 2170 MHz (cont.) Electrical Characteristics at 2170 MHz (cont.) Transmission Electrical Dimensions: mm Line Characteristics Dimensions: mils TL224 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50 TL225 0.111 λ, 47.12 W W = 1.270, L = 9.225 W = 50, L = 363 TL226 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50 Reference Circuit, 2110 – 2170 MHz (cont.) R101 C103 C101 C102 R103 S5 VDD S4 C205 R104 R106 S3 C204 R102 S2 R105 C104 C111 R201 1 C202 RF_OUT DUT RF_IN C106 C108 C109 C110 C105 PTFA220081M_01_CUS C201 C203 C107 2170 MHz RO4350, .020 (73) � � � � �� � � � � � � � � � � � � �� � �� � Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Data Sheet 14 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Reference Circuit, 2110 – 2170 MHz (cont.) Circuit Assembly Information DUT PTFA220081M LDMOS Transistor PCB LTN/PTFA220081M 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Component Description Suggested Manufacturer P/N Input C101, C102, C103 Chip capacitor, 1000 pF ATC PCC1772CT-ND C104, C105, C110, C111 Chip capacitor, 6.2 pF ATC ATC100A6R2CW150X C106 Chip capacitor, 12 pF ATC ATC100A120FJW150X C107 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X C108 Chip capacitor, 4.1 pF ATC ATC100A4R1CW150X C109 Chip capacitor, 0.6 pF ATC ATC100A0R6CW150X L1 Inductor, 22 nH ATC ATC0805WL22JT R101 Resistor, 1300 W Digi-Key P1.3KGCT-ND R102 Resistor, 10 W Digi-Key P10ECT-ND R103 Resistor, 1200 W Digi-Key P1.2KGCT-ND R104 Resistor, 2000 W Digi-Key P2.0KECT-ND R105 Resistor, 10 W Digi-Key P10GCT-ND R106 Resistor, 510 W Digi-Key P510ECT-ND S2 EMI filter, 2 - 4 A, 0.1 - 2.2 μF Digi-Key NFM18PS105R0J3 S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Transistor Digi-Key BCP56 S5 Voltage Regulator National Semiconductor LM7805 Chip capacitor, 12 pF ATC ATC100A120CW150X Output C201 C202 Chip capacitor, 0.3 pF ATC ATC100A0R3CW150X C203 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X C204 Chip capacitor, 10 pF ATC ATC100A100CW150X C205 Capacitor, 10 µF Digi-Key 587-1352-1-ND R201 Resistor, 0 W Digi-Key P0.0ECT-ND Data Sheet 15 of 17 Rev. 04, 2010-06-09 PTFA220081M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-SON-10 0.54 [.021] 2 PLACES 5X .320 [.0126] 2 PLACES 4.00 [.157] 6 7 8 9 10 .815 [.0321] 4.00 [.157] 2.97 [.117] S 2.37 [.093] 5X .515 [.0203] 2 PLACES INDEX MARKING 5 4 3 2 1 4X 0.65 [.026] 2 PLACES TOP VIEW 0.30 [.012] INDEX MARKING 3.40 [.134] BOTTOM VIEW 0.38 [.015] BOTH SIDES 1.42 [.056] PG-SON-10_po_02-19-2010 0.05 [.002] SIDE VIEW Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [.004] unless specified otherwise. 4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm. 5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain. 6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 16 of 17 Rev. 04, 2010-06-09 PTFA220081M V4 Confidential, Limited Internal Distribution Revision History: 2010-06-09 Previous Version: 2010-04-19, Advance Specification Page Subjects (major changes since last revision) All Data Sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-06-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 17 of 17 Rev. 04, 2010-06-09