INFINEON SIDC05D60SIC3

SIDC05D60SIC3
Silicon Carbide Schottky Diode
FEATURES:
• Worlds first 600V Schottky diode
• Revolutionary semiconductor material Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching
behavior
• Ideal diode for Power Factor Correction
• No forward recovery
Chip Type
VBR
SIDC05D60SIC3
600V
IF
C
Die Size
2A
A
Applications:
• SMPS, PFC, snubber
Package
0.84 x 0.59 mm2
sawn on foil
Ordering Code
Q67050-A4201A103
MECHANICAL PARAMETER:
Raster size
0.84 x 0.59
mm
Anode pad size
0.632 x 0.382
Area total / active
0.496 / 0.255
mm
Thickness
355
µm
Wafer size
75
mm
Flat position
0
deg
Max. possible chips per wafer
7970 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al
Cathode metalization
Die bond
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Wire bond
Al, ≤ 125µm
Reject Ink Dot Size
∅ ≥ 0.2 mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
2
SIDC05D60SIC3
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
600
Surge peak reverse voltage
V RSM
600
Continuous forward current limited by
Tjmax
Single pulse forward current
Condition
Value
IF
TC =25° C, tP =10 ms sinusoidal
4.1
I FRM
TC = 100° C, T j = 1 5 0 ° C,
D=0.1
7.3
Non repetitive peak forward current
I FMAX
TC =25° C, tp=10µs
17
Operating junction and storage
temperature
Tj , Ts t g
Maximum repetitive forward current
limited by Tjmax
V
2
I FSM
(depending on wire bond configuration)
Unit
A
-55...+175
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Reverse leakage current
Forward voltage drop
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IR
V R= 6 0 0 V *
Tj= 2 5 ° C
7
100
µA
VF
I F =2A
Tj= 2 5 ° C
1.6
2
V
* blocking characteristic measured under protective gas atmosphere. Chip should not be used without being
embedded in pottant with breakdown field strength lower than 9 KV/mm at full blocking voltage.
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Total capacitive charge
Symbol
QC
Conditions
Value
min.
Typ.
max.
Unit
I F =2A
d i /dt=200A/µs
Tj = 150 °C
4.6
nC
Tj = 150 °C
n.a.
ns
V R =400V
Switching time
t rr
I F =2A
di/dt=200A/µs
VR = 4 0 0 V
Total capacitance
C
I F =2A
di/dt=200A/µs
T j =25°C
f=1MHz
V R =1V
50
V R =300V
5.2
V R =600V
5
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
pF
SIDC05D60SIC3
CHIP DRAWING:
840
382
590
6
R6
632
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
SIDC05D60SIC3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES
SDT02S60
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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characteristics.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004