INFINEON BGB540LNA

%*%/1$
6LOLFRQ'LVFUHWHV
%*%DVD *+]/RZ1RLVH$PSOLILHU
9FF
ID
&
IBias
120pF
5
0Ω
5
2.7kΩ
&
10nF
IC
/
1.8nH
5
5
0Ω
BGB540
2.2pF
2
18pF
1
In
&
,&
&
Out
3
4
10Ω
/
5.6nH
)LJXUH $SSOLFDWLRQ&LUFXLW'LDJUDP
7DEOH 0HDVXUHG3HUIRUPDQFH'DWDDW 0+]DQG9&&
3DUDPHWHU
Supply current
Insertion power gain
6\PERO
9DOXH
8QLW
ICC
7.8
mA
14.2
dB
|S21|
Noise figure
9
2
NF
1.65
dB
|S11|2
10.3
dB
Output return loss
|S22|
2
11.2
dB
Reverse isolation
|S12|2
22.8
dB
IP1dB
-8.5
dBm
IIP3
0
dBm
Input return loss
Input 1 dB-compression point
Input third order intercept point
1)
1)
∆f = 1 MHz; Pin = -25 dBm
1
2002-02-06
%*%/1$
6LOLFRQ'LVFUHWHV
7DEOH %LOORI0DWHULDOV
1DPH
9DOXH
3DFNDJH
0DQXIDFWXUHU
)XQFWLRQ
C1
18 pF
0402
various
Input matching, DC block
C2
120 pF
0402
various
RF bypass
C3
2.2 pF
0402
various
Output matching, DC block
C4
10 nF
0402
various
RF bypass
IC1
BGB540 SOT343
Infineon Technologies Active biased transistor
L1
5.6 nH
0402
Toko LL 1005-FH
Input matching
L2
1.8 nH
0402
Toko LL 1005-FH
Output matching, RF choke
R1
0Ω
0402
various
Jumper
R2
2.7 kΩ
0402
various
Supply current adjustment
R3
0Ω
0402
various
Jumper
R4
10 Ω
0402
various
Stabilization
0HDVXUHG&LUFXLW3HUIRUPDQFH
All presented measurement values include losses of both PCB and connectors - in other
words, the reference planes used for measurements are the PCB’s RF SMA connectors.
Noise figure and gain results shown do not have any PCB loss extracted from them.
16
15
14
@
%
G
>
13
LQ
D
*
12
11
10
1.7
1.75
1.8
1.85
1.9
1.95
2
)UHTXHQF\>*+]@
)LJXUH ,QVHUWLRQ*DLQ
2
2002-02-06
%*%/1$
6LOLFRQ'LVFUHWHV
8
9
@
%
G
>
V
V
R
/
10
s11
11
Q
U
X
W
H
5
s22
12
13
14
1.7
1.75
1.8
1.85
1.9
1.95
2
1.9
1.95
2
)UHTXHQF\>*+]@
)LJXUH ,QSXWDQG2XWSXW5HWXUQ/RVV
18
@
%
G
>
20
Q
R
L
W
OD
22
R
,V
H
V
U
H
Y
H
5
24
26
1.7
1.75
1.8
1.85
)UHTXHQ\>*+]@
)LJXUH 5HYHUVH,VRODWLRQ
3
2002-02-06
%*%/1$
6LOLFRQ'LVFUHWHV
5
4
3
%
.
K
2
1
B1
0
0
1
2
3
4
5
6
5
6
)UHTXHQF\>*+]@
)LJXUH 6WDELOLW\)DFWRU.DQG6WDELOLW\0HDVXUH%
16
14
12
@
%
G
>
10
LQ
D
*
8
6
4
2
0
0
1
2
3
4
)UHTXHQF\>*+]@
)LJXUH :LGH6SDQ*DLQ
4
2002-02-06
%*%/1$
6LOLFRQ'LVFUHWHV
0
@
%
G
>
V
V
R
/
5
s11
10
Q
U
X
W
H
5
15
s22
20
25
0
1
2
3
4
5
6
)UHTXHQF\>*+]@
)LJXUH :LGH6SDQ5HWXUQ/RVV
10
15
5
14
@
P
%
G
>
W
X
R
3
Gain
0
13
-5
12
-10
@
%
G
>
Q
L
D
*
11
Pout
-15
10
-30
-25
-20
-15
-10
-5
3LQ>G%[email protected]
)LJXUH *DLQ&RPSUHVVLRQ# *+=
5
2002-02-06
%*%/1$
6LOLFRQ'LVFUHWHV
$SSOLFDWLRQERDUGDQGFRPSRQHQWSODFHPHQW
)LJXUH shows the placement of the specific components on the application PCB.
)LJXUH displays the cross section of the application board. The actually used
microstrip structure is the one with the 0.2 mm FR4 dielectric. The 0.8 mm FR4 are for
mechanical rigidity purposes only.
Vcc
C4
L2
R1
R2
C2
Out
C3
In
R3
)LJXUH Cut here
L1
IC1
R4
C1
&RPSRQHQW3ODFHPHQWRQWKH$SSOLFDWLRQ3&%
35 µm Cu
0.2 mm FR4
35 µm Cu
for mechanical
rigidity of PCB
0.8 mm FR4
35 µm Cu
)LJXUH 3&%&URVV6HFWLRQ
6
2002-02-06