INFINEON C67078-A4674-A001

SIGC25T120C
IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 200µm chip
• positive temperature coefficient
• easy paralleling
This chip is used for:
• BUP 213
C
Applications:
• drives
Chip Type
SIGC25T120C
VCE
ICn
1200V
15A
G
Die Size
Package
5.71 x 4.53 mm2
sawn on foil
E
Ordering Code
C67078-A4674A001
MECHANICAL PARAMETER:
Raster size
Emitter pad size
5.71 x 4.53
mm
2
2 x ( 2.18 x 1.6 )
Gate pad size
1.09 x 0.68
Area total / active
25.9 / 18.7
Thickness
180
µm
Wafer size
150
mm
Flat position
270
grd
Max.possible chips per wafer
555 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
SIGC25T120C
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
45
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC=1mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =15A
2.0
2.5
3.0
Gate-emitter threshold voltage
VGE(th)
IC =0.6mA , VGE=VCE
4.5
5.5
6.5
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
1.9
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
480
nA
V
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E= 2 5 V ,
-
1000
-
Output capacitance
Co s s
V GE= 0 V ,
-
150
-
Reverse transfer capacitance
Cr s s
f =1MHz
-
70
-
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Symbol
Conditions 1)
Value
min.
typ.
Turn-on delay time
t d(on)
Tj= 1 2 5 ° C
-
55
Rise time
tr
V C C =600V,
-
45
V G E =+15/ - 1 5 V ,
-
400
R G = 8 2Ω
-
70
IC=15A,
Turn-off delay time
td(off)
Fall time
tf
1)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
max.
Unit
ns
SIGC25T120C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
SIGC25T120C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BUP213
Package TO220
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003