GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) CF 739 MS Q62702-F1215 S SOT-143 D G2 G1 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 10 V Gate 1-source voltage – VG1S 6 Gate 2-source voltage – VG2S 6 Drain current ID 80 Gate 1-source peak current + IG1SM 1 Gate 2-source peak current + IG2SM 1 Total power dissipation, TS ≤ 66 ˚C2) Ptot 240 mW Channel temperature Tch 150 ˚C Storage temperature range Tstg – 55 … + 150 RthchS ≤ mA Thermal Resistance Channel - soldering point3) 1) 2) 3) 350 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. TS is measured on the source lead at the soldering point to the pcb. Semiconductor Group 1 04.96 CF 739 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 100 µA, – VG1S = – VG2S = 4 V V(BR)DS 10 – – V Gate 1 leakage current – VG1S = 5 V, VG2S = VDS = 0 – IG1SS – – 20 µA Gate 2 leakage current – VG2S = 5 V, VG1S = VDS = 0 – IG2SS – – 20 Drain current VG1S = 0, VG2S = 0, VDS = 3 V IDSS 6 – 60 mA Gate 1-source pinch-off voltage VG2S = 0, VDS = 5 V, ID = 200 µA – VG1S(P) – – 2.5 V Gate 2-source pinch-off voltage VG1S = 0, VDS = 5 V, ID = 200 µA – VG2S(P) – – 2.5 Forward transconductance VDS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz gfs – 25 – mS Gate 1 input capacitance VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Cgfss – 0.95 – pF Output capacitance VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Cdss – 0.5 – Noise figure VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz F – – 1.8 1.1 – – Power gain VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz Gps – – 17 22 – – Control range VG2S = 2 V … – 3 V ∆ Gpsc – 50 – AC Characteristics Semiconductor Group 2 dB CF 739 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Output characteristics ID = f (VDS) VG2S = 2 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 5 V, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 5 V, f = 1 kHz Semiconductor Group 3 CF 739 Drain current ID = f (VG1S) VDS = 5 V Drain current ID = f (VG2S) VDS = 5 V Gate 1 input transconductance Cg1ss = f (ID) VG2S = 2 V, VDS = 5 V, f = 0.1 – 1 GHz Output capacitance Cdss = f (VDS) VG2S = 2 V, ID = 10 mA, f = 0.1 – 1 GHz Semiconductor Group 4 CF 739 Common Source Admittance Parameters, G2 RF grounded Gate 1 input admittance y11s VDS = 5 V, VG2S = 2 V, ID = 10 mA Gate 1 forward transfer admittance y21s VDS = 5 V, VG2S = 2 V, ID = 10 mA Output admittance y22s VDS = 5 V, VG2S = 2 V, ID = 10 mA Semiconductor Group 5 CF 739 Common Source S-Parameters, G2 RF grounded f S11 GHz MAG S21 ANG MAG S12 ANG S22 MAG ANG MAG ANG 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.012 0.012 0.010 0.009 0.008 0.005 0.002 81.8 85.8 90.8 84.2 88.1 84.4 83.3 79.6 78.6 78.0 76.6 73.3 70.4 69.5 66.4 59.9 59.9 57.5 54.1 49.2 43.7 39.4 35.2 32.2 25.1 – 25.0 0.963 0.963 0.962 0.962 0.962 0.962 0.962 0.961 0.960 0.960 0.961 0.958 0.956 0.955 0.953 0.949 0.949 0.949 0.948 0.945 0.941 0.937 0.936 0.936 0.937 0.934 – 1.0 – 1.4 – 1.7 – 2.5 – 3.4 – 4.3 – 5.2 – 6.8 – 8.5 – 10.3 – 12.0 – 13.7 – 15.4 – 17.0 – 20.6 – 24.3 – 26.2 – 27.9 – 31.5 – 35.3 – 39.4 – 44.4 – 47.0 – 49.6 – 54.6 – 59.1 VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 Ω 0.06 0.08 0.10 0.15 0.20 0.25 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.50 2.60 2.80 3.00 0.999 0.998 0.998 0.997 0.993 0.989 0.987 0.975 0.965 0.951 0.935 0.918 0.900 0.877 0.883 0.773 0.744 0.720 0.666 0.614 0.556 0.497 0.466 0.449 0.408 0.375 Semiconductor Group – 2.4 – 3.2 – 4.1 – 6.0 – 8.0 – 10.1 – 12.1 – 16.0 – 19.9 – 23.8 – 27.5 – 31.4 – 35.2 – 39.0 – 46.6 – 53.7 – 56.8 – 60.1 – 66.2 – 72.8 – 80.3 – 87.2 – 90.2 – 92.8 – 97.1 – 101.7 3.21 3.21 3.21 3.22 3.22 3.21 3.21 3.18 3.15 3.12 3.09 3.05 3.03 3.02 2.96 2.85 2.77 2.74 2.64 2.59 2.53 2.45 2.38 2.34 2.24 2.17 176.9 175.5 174.3 171.4 168.4 165.5 162.5 156.6 150.7 145.0 139.3 134.0 128.5 122.9 111.4 99.7 94.4 89.2 78.9 68.6 57.4 45.6 40.0 34.5 23.6 12.2 6 CF 739 S11, S22 = f (f), Z-plane VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 Ω S12, S21 = f (f) VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 Ω Semiconductor Group 7