DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification PNP Darlington transistor PZTA64 FEATURES PINNING • High current (max. 500 mA) PIN • Low voltage (max. 30 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Preamplifiers requiring high input impedance. handbook, halfpage DESCRIPTION 4 1 2, 4 PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. TR1 TR2 1 2 3 MAM320 3 Top view Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −30 V VCES collector-emitter voltage VBE = 0 − −30 V IC collector current (DC) − −500 mA W Ptot total power dissipation Tamb ≤ 25 °C − 1.25 hFE DC current gain IC = −10 mA; VCE = −5 V 10000 − fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 125 − 1997 Jun 20 2 MHz Philips Semiconductors Product specification PNP Darlington transistor PZTA64 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −30 V VCES collector-emitter voltage VBE = 0 − −30 V VEBO emitter-base voltage open collector − −10 V IC collector current (DC) − −500 mA ICM peak collector current − −800 mA IB base current (DC) − −200 mA − 1.25 W Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point note 1 VALUE UNIT 100 K/W 19 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. 1997 Jun 20 3 Philips Semiconductors Product specification PNP Darlington transistor PZTA64 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −30 V MIN. − MAX. −100 UNIT ICBO collector cut-off current ICES collector cut-off current VBE = 0; VCE = −30 V − −100 nA IEBO emitter cut-off current IC = 0; VEB = −10 V − −100 nA hFE DC current gain VCE = −5 V; see Fig.2 IC = −10 mA 10000 − IC = −100 mA 20000 − − −1.5 V − −2 V − MHz VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA VBEon base-emitter voltage IC = −100 mA; VCE = −5 V fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 125 nA MGD836 100000 handbook, full pagewidth hFE 80000 60000 40000 20000 0 −1 −10 −102 VCE = −2 V. Fig.2 DC current gain; typical values. 1997 Jun 20 4 IC (mA) −103 Philips Semiconductors Product specification PNP Darlington transistor PZTA64 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1997 Jun 20 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PNP Darlington transistor PZTA64 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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