PHILIPS BGA2001

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2001
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
1999 Aug 11
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
FEATURES
PINNING
• Low current, low voltage
PIN
DESCRIPTION
• Very high power gain
1
GND
• Low noise figure
2
RF in
• Integrated temperature compensated biasing
3
GND
• Supply and RF output pin combined.
4
VS + RFout
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
VS+RFout
handbook, halfpage
3
4
• Radar detectors
BIAS
CIRCUIT
• Low noise amplifiers
• Satellite television tuners (SATV)
2
• High frequency oscillators.
1
Top view
MAM430
RFin
GND
DESCRIPTION
Marking code: A1.
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
CONDITIONS
DC supply voltage
RF input AC coupled
TYP.
MAX.
UNIT
−
4.5
V
IS
DC supply current
VVS-OUT = 2.5 V; RF input AC coupled
4.5
−
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1.8 GHz;
Tamb = 25 °C
19.5
−
dB
NF
noise figure
VVS-OUT = 2.5 V; f = 1.8 GHz; ΓS = Γopt
1.3
−
dB
1999 Aug 11
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
supply voltage
RF input AC coupled
−
4.5
V
IS
supply current (DC)
forced by DC voltage on RF input
−
30
mA
Ts ≤ 100 °C
Ptot
total power dissipation
−
135
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
UNIT
350
K/W
thermal resistance from junction to soldering point
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
MSG
|s21|2
PARAMETER
supply current
maximum stable gain
insertion power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VVS-OUT = 1 V
−
0.7
−
mA
VVS-OUT = 2.5 V
3
4.5
6
mA
VVS-OUT = 4.5 V
−
11
−
mA
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
−
22
−
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
−
19.5
−
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
−
18
−
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
−
14
−
dB
PL
load power
at 1 dB gain compression point; −
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz;
−2
−
dBm
NF
noise figure
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz;
ΓS = Γopt
−
1.3
−
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz;
ΓS = Γopt
−
1.3
−
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz
−
−7.4
−
dBm
VVS-OUT = 2.5 V;
IVS-OUT = 4.5 mA;
f = 1800 MHz
−
−4.5
−
dBm
IP3(in)
input intercept point; note 1
Note
1. See application note: RNR-T45-99-B-0513.
1999 Aug 11
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS606
200
handbook, halfpage
100 pF
handbook, halfpage
Ptot
(mW)
R1
VS
L1
150
C
RF out
GND
VS-OUT
100
BGA2001
IN
GND
50
C
RF in
0
MGS605
0
50
Fig.2 Typical application circuit.
100
150
200
Fig.3 Power derating curve.
MGS607
12
Ts (°C)
MGS608
16
handbook, halfpage
handbook, halfpage
IVS-OUT
IVS-OUT
(mA)
10
(mA)
(8)
12
(7)
8
(6)
8
(5)
6
(4)
4
(3)
4
(2)
2
(1)
0
0
−40
(1)
(2)
(3)
(4)
0
VVS-OUT = 1 V
VVS-OUT = 1.5 V
VVS-OUT = 2 V
VVS-OUT = 2.5 V
Fig.4
40
(5)
(6)
(7)
(8)
80
0
120
Tamb (°C)
2
3
4
VVS-OUT (V)
5
VVS-OUT = 3 V
VVS-OUT = 3.5 V
VVS-OUT = 4 V
VVS-OUT = 4.5 V.
Bias current (IVS-OUT) as a function of
ambient temperature with VVS-OUT as
parameter; typical values.
1999 Aug 11
1
Fig.5
4
Bias current (IVS-OUT) as a function of
voltage at the output pin (VVS-OUT);
typical values.
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS609
MGS610
25
30
gain
(dB)
25
handbook, halfpage
handbook, halfpage
gain
(dB)
GUM
20
MSG
MSG
20
GUM
15
15
10
10
5
5
0
0
0
2
4
6
8
10
IVS-OUT (mA)
0
2
f = 900 MHz.
f = 1800 MHz.
Fig.6
Fig.7
Gain as a function of bias current
(IVS-OUT); typical values.
MGS611
40
4
6
8
10
IVS-OUT (mA)
Gain as a function of bias current
(IVS-OUT); typical values.
MGS612
3
min
(dB)
2.5
handbook,
NF halfpage
handbook, halfpage
gain
(dB)
GUM
(1)
30
2
MSG
(2)
(3)
(4)
1.5
20
Gmax
1
10
0.5
0
102
103
f (MHz)
0
10−1
104
VVS-OUT = 2.5 V; IVS-OUT = 4 mA.
(1) f = 2400 MHz
(2) f = 1000 MHz
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
1999 Aug 11
5
1
I C (mA)
10
(3) f = 900 MHz
(4) f = 1800 MHz.
Minimum noise figure as a function of bias
current (IVS-OUT); typical values.
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, full pagewidth
90°
unstable region
source
1.0
+1
135°
45°
+2
+0.5
unstable
region load
0.8
0.6
+0.2
Γopt
(1)
180°
0.2
0
0.4
+5
0.5
(2)
1
0.2
2
5
0°
0
(4)
(3)
(5)
−0.2
f = 900 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; Zo = 50 Ω.
(1) G = 22 dB
(2) G = 21 dB
(3) G = 20 dB
(4) NF = 1.3 dB
(5) NF = 1.5 dB
(6) NF = 1.7 dB.
−5
(6)
−0.5
−135°
−2
− 45°
−1
1.0
− 90°
MGS613
Fig.10 Noise, stability and gain circles; typical values.
handbook, full pagewidth
90°
unstable region
source
135°
unstable
region load
1.0
+1
+0.5
45°
+2
0.8
0.6
Γopt
(1)
+0.2
0.4
+5
(2)
180°
0.2
0
(3)
0.2
0.5
1
(4)
2
5
0°
0
(5)
(6)
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; Zo = 50 Ω.
(1) G = 19 dB
(2) G = 18 dB
(3) G = 17 dB
(4) NF = 1.3 dB
(5) NF = 1.5 dB
(6) NF = 1.7 dB.
−5
−0.2
−135°
−0.5
−2
− 45°
−1
1.0
− 90°
MGS614
Fig.11 Noise, stability and gain circles; typical values.
1999 Aug 11
6
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
100 MHz
3 GHz
200 MHz
−0.2
500 MHz
1.8 GHz
1 GHz
900 MHz
−2
−0.5
−135°
−5
− 45°
−1
1.0
− 90°
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 Ω.
MGS615
Fig.12 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
900 MHz
1.8 GHz
1 GHz
500 MHz
3 GHz
200 MHz
100 MHz
180°
10
8
6
4
0°
2
−135°
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 Ω.
− 45°
− 90°
MGS616
Fig.13 Common emitter forward transmission coefficient (s21); typical values.
1999 Aug 11
7
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
90°
handbook, full pagewidth
135°
180°
0.5
0.4
45°
0.3
0.2
3 GHz
0.1
0°
100 MHz
−135°
− 45°
− 90°
MGS617
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 Ω.
Fig.14 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
100 MHz
200 MHz
−0.2
3 GHz
1.8 GHz
−135°
−0.5
500 MHz
−5
900 MHz
1 GHz
−2
− 45°
−1
1.0
− 90°
MGS618
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 Ω.
Fig.15 Common emitter output reflection coefficient (s22); typical values.
1999 Aug 11
8
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1999 Aug 11
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 11
10
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
NOTES
1999 Aug 11
11
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Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
125006/06/pp12
Date of release: 1999
Aug 11
Document order number:
9397 750 06264