PHILIPS TDA8510J

INTEGRATED CIRCUITS
DATA SHEET
TDA8510J
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
Supersedes data of 1999 Jun 14
File under Integrated Circuits, IC01
1999 Dec 14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
FEATURES
• Electrostatic discharge protection
• Requires very few external components
• No switch-on/switch-off plop
• High output power
• Flexible leads
• Low output offset voltage (BTL channel)
• Low thermal resistance
• Fixed gain
• Identical inputs (inverting and non-inverting).
• Diagnostic facility (distortion, short-circuit and
temperature detection)
GENERAL DESCRIPTION
• Good ripple rejection
The TDA8510J is an integrated class-B output amplifier in
a 17-lead single-in-line (SIL) power package. It contains a
26 W Bridge-Tied Load (BTL) amplifier and 2 × 13 W
Single-Ended (SE) amplifiers.
• Mode select switch (operating, mute and standby)
• AC and DC short-circuit safe to ground and to VP
• Low power dissipation in any short-circuit condition
The device is primarily developed for multi-media
applications and active speaker systems (stereo with
subwoofer).
• Thermally protected
• Reverse polarity safe
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General
VP
supply voltage
6
15
18
V
IORM
repetitive peak output current
−
−
4
A
Iq(tot)
total quiescent current
−
80
−
mA
Istb
standby current
−
0.1
100
µA
−
26
−
W
46
−
−
dB
BTL channel
Po
output power
SVRR
supply voltage ripple rejection
RL = 4 Ω; THD = 10%
Vn(o)
noise output voltage
−
70
−
µV
Zi
input impedance
Rs = 0 Ω
25
−
−
kΩ
∆VOO
DC output offset voltage
−
−
150
mV
RL = 4 Ω
−
7
−
W
RL = 2 Ω
−
13
−
W
46
−
−
dB
−
50
−
µV
50
−
−
kΩ
Single-ended channels
Po
output power
SVRR
supply voltage ripple rejection
Vn(o)
noise output voltage
Zi
input impedance
THD = 10%
Rs = 0 Ω
ORDERING INFORMATION
TYPE
NUMBER
TDA8510J
1999 Dec 14
PACKAGE
NAME
DESCRIPTION
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
2
VERSION
SOT243-1
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
BLOCK DIAGRAM
non-inverting
input 1
1
mute switch
VP1
VP2
5
13
Cm
60
kΩ
TDA8510J
6
VA
output 1
2
kΩ
power stage
18 kΩ
non-inverting
input 2
3
mute switch
Cm
60
kΩ
8
VA
output 2
2
kΩ
power stage
18 kΩ
VP
standby
switch
mode
select
switch
16
diagnostic
output
standby
reference
voltage
VA
15 kΩ
PROTECTIONS
thermal
short-circuit
mute
switch
x1
supply voltage
ripple rejection
14
4
15 kΩ
mute
reference
voltage
mute switch
Cm
60
kΩ
inverting
input 3
15
10
VA
output 3
2
kΩ
power stage
18 kΩ
non-inverting
input 4
17
mute switch
Cm
60
kΩ
12
VA
2
kΩ
input
reference
voltage
2
ground
(signal)
power stage
18 kΩ
9
7
11
GND1
GND2
not connected
power ground (substrate)
Fig.1 Block diagram.
1999 Dec 14
3
MGL428
output 4
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
PINNING
SYMBOL
PIN
DESCRIPTION
−INV1
1
non-inverting input 1
SGND
2
signal ground
−INV1
1
−INV2
3
non-inverting input 2
SGND
2
−INV2
3
RR
4
VP1
5
OUT1
6
GND1
7
OUT2
8
n.c.
9
RR
4
supply voltage ripple rejection
VP1
5
supply voltage 1
OUT1
6
output 1
GND1
7
power ground 1
OUT2
8
output 2
n.c.
9
not connected
OUT3
10
output 3
GND2
11
power ground 2
OUT4
12
output 4
VP2
13
supply voltage 2
MODE
14
mode select switch input
INV3
15
inverting input 3
VDIAG
16
diagnostic output
−INV4
17
non-inverting input 4
TDA8510J
OUT3 10
GND2 11
OUT4 12
VP2 13
MODE 14
INV3 15
VDIAG 16
−INV4 17
MGL427
Fig.2 Pin configuration.
1999 Dec 14
4
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
During this short-circuit condition, pin 16 is LOW for 20 ms
and HIGH for 50 µs (see Fig.5).
FUNCTIONAL DESCRIPTION
The TDA8510J contains four identical amplifiers and can
be used for two Single-Ended (SE) channels (fixed gain
20 dB) and one Bridge-Tied Load (BTL) channel (fixed
gain 26 dB). Special features of the device are:
The power dissipation in any short-circuit condition is very
low.
Mode select switch (pin 14)
• Low standby current (<100 µA)
• Low switching current (low cost supply switch)
• Mute facility.
MGA705
handbook, halfpage VO
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17). This can be achieved
by:
0
V16
VP
• Microcontroller control
• External timing circuit (see Fig.8).
0
t
Diagnostic output (pin 16)
DYNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 16
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 16 is independent of the number of channels that are
clipping (see Figs 3 and 4).
Fig.3 Distortion detector waveform; BTL channel.
handbook, halfpage VO
SHORT-CIRCUIT PROTECTION
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 16 is continuously LOW.
0
V16
VP
0
When a short-circuit across the load of one or more
channels occurs the output stages are switched off for
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).
1999 Dec 14
MGA706
t
Fig.4 Distortion detector waveform; SE channels.
5
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
handbook, full pagewidthcurrent
MGL214
in
output
stage
t
short-circuit over the load
V16
20 ms
VP
t
50 µs
Fig.5 Short-circuit waveform.
TEMPERATURE DETECTION
When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW.
OPEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
MIN.
MAX.
UNIT
operating
−
18
V
no signal
−
20
V
IOSM
non-repetitive peak output current
−
6
A
IORM
repetitive peak output current
−
4
A
Vsc
AC and DC short-circuit safe voltage
−
18
V
Vrp
reverse polarity voltage
−
6
V
Ptot
total power dissipation
−
60
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tvj
virtual junction temperature
−
150
°C
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-c)
thermal resistance from junction to case (see Fig.6)
1999 Dec 14
in free air
6
VALUE
UNIT
40
K/W
1.3
K/W
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
handbook, halfpage
output 1
3.0 K/W
TDA8510J
virtual junction
output 3
output 2
3.0 K/W
3.0 K/W
output 4
3.0 K/W
0.7 K/W
0.7 K/W
MEA860 - 2
0.2 K/W
case
Fig.6 Equivalent thermal resistance network.
1999 Dec 14
7
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
DC CHARACTERISTICS
VP = 15 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
Iq(tot)
VO
∆VOO
DC output offset voltage
note 1
6
15
18
total quiescent current
−
80
160
mA
DC output voltage
−
6.9
−
V
−
−
150
mV
8.5
−
−
V
note 2
V
Mode select switch
VSW(on)
switch-on voltage level
MUTE CONDITION
Vmute
mute voltage
3.3
−
6.4
V
VO
output voltage in mute position
VI(max) = 1 V; f = 1 kHz
−
−
2
mV
∆VOO
DC output offset voltage
note 2
−
−
150
mV
V
STANDBY CONDITION
Vstb
standby voltage
0
−
2
Istb
standby current
−
−
100
µA
Isw(on)
switch-on current
−
12
40
µA
−
0.6
V
Diagnostic output (pin 16)
VDIAG
diagnostic output voltage
any short-circuit or clipping −
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. Only for BTL channel (V12-10).
1999 Dec 14
8
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
AC CHARACTERISTICS
VP = 15 V; f = 1 kHz; Tamb = 25 °C; measure in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTL channel
Po
output power
note 1
THD = 0.5%
16
20
−
W
THD = 10%
22
26
−
W
THD
total harmonic distortion
Po = 1 W
−
0.06
−
%
B
power bandwidth
THD = 0.5%;
−
20 to
−
Hz
fro(l)
low frequency roll-off
at −1 dB; note 2
−
25
−
Hz
fro(h)
high frequency roll-off
at −1 dB
20
−
−
kHz
Gv
closed loop voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection
on
48
−
−
dB
mute
46
−
−
dB
standby
80
−
−
dB
25
30
38
kΩ
Po = −1 dB; with respect to 16 W
Zi
input impedance
Vn(o)
noise output voltage
αcs
channel separation
15000
note 3
on; Rs = 0 Ω; note 4
−
70
−
µV
on; Rs = 10 kΩ; note 4
−
100
200
µV
mute; notes 4 and 5
−
60
−
µV
Rs = 10 kΩ
40
60
−
dB
V16 ≤ 0.6 V; no short-circuit
−
10
−
%
DYNAMIC DISTORTION DETECTOR
THD
1999 Dec 14
total harmonic distortion
9
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
SYMBOL
PARAMETER
TDA8510J
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Single-ended channels
Po
output power
note 1
THD = 0.5%
8
10
−
W
THD = 10%
11
13
−
W
THD = 0.5%
−
5.5
−
W
THD = 10%
−
7
−
W
RL1 = 4 Ω; note 1
THD
total harmonic distortion
Po = 1 W
−
0.06
−
%
fro(l)
low frequency roll-off
at −1 dB; note 2
−
25
−
Hz
fro(h)
high frequency roll-off
at −1 dB
20
−
−
kHz
Gv
closed loop voltage gain
19
20
21
dB
SVRR
supply voltage ripple rejection
on
48
−
−
dB
mute
46
−
−
dB
standby
80
−
−
dB
50
60
75
kΩ
on; Rs = 0 Ω; note 4
−
50
−
µV
Zi
input impedance
Vn(o)
noise output voltage
αcs
channel separation
∆Gv
channel unbalance
note 3
on; Rs = 10 kΩ; note 4
−
70
100
µV
mute; notes 4 and 5
−
50
−
µV
Rs = 10 kΩ
40
60
−
dB
−
−
1
dB
−
10
−
%
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V16 ≤ 0.6 V; no short-circuit
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency of between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
1999 Dec 14
10
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
TEST AND APPLICATION INFORMATION
mode
switch
handbook, full pagewidth
16
14
220 nF
input 1
100
nF
10
kΩ
5
13
TDA8510J
1
+
6
−
1000 µF
RL1
2Ω
60
kΩ
−
220 nF
input 2
3
8
+
1000 µF
2
60
kΩ
ground (signal)
100 1/2VP
µF
RL1
2Ω
reference
voltage
4
supply voltage
ripple rejection
VP
2200
µF
9
60
kΩ
15
−
not connected
10
+
inputs
3 and 4
470 nF
60
kΩ
RL2
4Ω
−
17
12
+
7
11
MGL429
power ground (substrate)
Fig.7 Application diagram.
1999 Dec 14
11
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
Mode select switch
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during >100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.8 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.
handbook, halfpage
VP
10 kΩ
47 µF
100 Ω
mode
select
switch
100 kΩ
MGA708
Fig.8 Mode select switch circuitry.
1999 Dec 14
12
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
17
e1
Z
bp
e
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
j
L
L3
m
Q
v
w
x
Z (1)
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT243-1
1999 Dec 14
EUROPEAN
PROJECTION
13
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
The total contact time of successive solder waves must not
exceed 5 seconds.
SOLDERING
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
DBS, DIP, HDIP, SDIP, SIL
WAVE
suitable(1)
suitable
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 14
14
Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE power
amplifiers
TDA8510J
NOTES
1999 Dec 14
15
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2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 68
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/03/pp16
Date of release: 1999
Dec 14
Document order number:
9397 750 06653