PHILIPS BC638

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC636; BC638; BC640
PNP medium power transistors
Product specification
Supersedes data of 1997 Mar 07
1999 Apr 23
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
base
2
collector
3
emitter
• Audio and video amplifiers.
handbook, halfpage1
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NP complements: BC635, BC637 and BC639.
2
2
3
1
3
MAM285
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
BC636
VCEO
MIN.
−45
V
BC638
−
−60
V
BC640
−
−100
V
collector-emitter voltage
open base
BC636
−
−45
V
BC638
−
−60
V
BC640
−
−80
V
−
−5
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−1.5
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
0.83
W
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−100
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−10
µA
IC = 0; VEB = −5 V
−
−100
nA
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCE = −2 V; see Fig.2
IC = −5 mA
40
−
IC = −150 mA
63
250
IC = −500 mA
25
−
BC636-10
63
160
BC636-16; BC638-16; BC640-16
100
250
IC = −500 mA; IB = −50 mA
−
−0.5
V
−
DC current gain
IC = −150 mA; VCE = −2 V; see Fig.2
VCEsat
collector-emitter saturation voltage
VBE
base-emitter voltage
IC = −500 mA; VCE = −2 V
−1
V
fT
transition frequency
IC = −50 mA; VCE = −5 V; f = 100 MHz 100
−
MHz
h FE1
----------h FE2
DC current gain ratio of the
complementary pairs
IC = 150 mA; VCE = 2 V
1.6
1999 Apr 23
3
−
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
MBH730
160
handbook, full pagewidth
VCE = −2 V
hFE
120
80
40
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
1999 Apr 23
4
−103
IC (mA)
−104
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 23
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
6
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
NOTES
1999 Apr 23
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 23
Document order number:
9397 750 05813