PHILIPS BAW62

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62
High-speed diode
Product data sheet
Supersedes data of April 1996
1996 Sep 17
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
handbook, halfpage
k
a
• Repetitive peak forward current:
max. 450 mA.
MAM246
The diode is type branded.
APPLICATIONS
• High-speed switching
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
75
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
250
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
t = 1 μs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
−
Ptot
total power dissipation
Tstg
storage temperature
−65
Tj
junction temperature
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 17
2
350
mW
+200
°C
200
°C
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
reverse current
MAX.
UNIT
620
750
mV
see Fig.3
IF = 5 mA
IR
MIN.
IF = 100 mA
−
1 000
mV
IF = 100 mA; Tj = 100 °C
−
930
mV
VR = 20 V
−
25
nA
VR = 50 V
−
200
nA
VR = 75 V
−
5
μA
VR = 20 V; Tj = 150 °C
−
50
μA
see Fig.5
VR = 75 V; Tj = 150 °C
−
100
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 17
3
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
GRAPHICAL DATA
MBG448
300
MBG464
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
(1)
(3)
200
100
0
0
0
Tamb (oC)
100
0
200
1
2
VF (V)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
(2)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (μs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
4
104
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
MGD006
103
handbook, halfpage
MGD004
1.2
handbook, halfpage
IR
(μA)
Cd
(pF)
102
1.0
(1)
(2)
(3)
10
0.8
1
0.6
10−1
10−2
0
100
Tj (oC)
0.4
200
0
(1) VR = 75 V; maximum values.
(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
1996 Sep 17
5
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 17
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
PACKAGE OUTLINE
0.56
max
1.85
max
4.25
max
25.4 min
Dimensions in mm.
Fig.9 SOD27 (DO-35).
1996 Sep 17
7
25.4 min
mla428 - 1
NXP Semiconductors
Product data sheet
High-speed diode
BAW62
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1996 Sep 17
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
1996 Sep 17