Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector Saturation current Inductive fall time VBE = 0 V 2.5 0.08 1000 450 5 10 100 1.5 V V A A W V A µs PINNING - TO220AB PIN base 2 collector 3 emitter tab ICon = 2.5 A; IBon = 0.5 A PIN CONFIGURATION DESCRIPTION 1 Tmb ≤ 25 ˚C IC = 2.5 A; IB = 0.33 A 0.15 SYMBOL c tab b collector e 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1000 450 5 10 2 4 100 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.25 K/W - 60 K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient August 1997 CONDITIONS in free air 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES ICES Collector cut-off current IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 2.5 A;IB = 0.33 A IC = 2.5 A;IB = 0.33 A IC = 5 mA; VCE = 5 V IC = 0.5 A; VCE = 5 V IC = 2.5 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 450 - 10.0 - mA V 10 14 9 20 22 13 1.5 1.3 35 35 17 V V TYP. MAX. UNIT 0.6 3.4 0.6 - 1.0 µs 4.0 0.8 µs µs 1.1 80 1.4 150 µs ns 1.2 140 1.5 300 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Switching times resistive load Turn-on time ICon = 2.5 A; IBon = 0.5 A; -IBoff = 0.5 A ton ts tf Turn-off storage time Turn-off fall time Switching times inductive load ts tf Turn-off storage time Turn-off fall time ts tf Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C [INCLUDE] 1 Measured with half sine-wave voltage (curve tracer). August 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.1. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1997 4 Rev 1.000