Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V 6 0.35 1500 800 10 25 45 5.0 2.2 0.5 V V A A W V A V µs PINNING - SOT399 PIN base 2 collector 3 emitter IF = 6.0 A ICsat = 6.0 A; IB(end) = 1.0 A PIN CONFIGURATION DESCRIPTION 1 Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A case isolated SYMBOL case c b Rbe e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 10 25 6 9 150 6 45 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 100 7.5 800 13.5 50 - 300 - mA V Ω V 5 - 13 7 - 5.0 1.1 9.5 2.2 V V STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO Rbe VCEOsust Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE VF Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1.0 A; VCE = 5 V IC = 6 A; VCE = 5 V IF = 6 A V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (16 kHz line deflection circuit) ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs) 4.5 0.35 5.5 0.5 µs µs ts tf Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2520DX 100 hFE DIODE Tj = 25 C 5V t Tj = 125 C IBend IB 10 t 20us 26us 1V 64us VCE 1 0.1 1 10 100 IC / A t Fig.1. Switching times waveforms (16 kHz). Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE ICsat 1.2 90 % VBESAT / V Tj = 25 C 1.1 IC Tj = 125 C 1.0 0.9 10 % 0.8 tf t ts 0.7 IBend 0.6 IC/IB= IB 3 4 0.5 t 0.4 5 0.1 1 IC / A - IBM Fig.2. Switching times definitions. 10 Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB + 150 v nominal adjust for ICsat 1.0 VCESAT / V IC/IB = 0.9 5 0.8 4 0.7 Lc 3 0.6 0.5 Tj = 25 C 0.4 D.U.T. LB IBend Tj = 125 C 0.3 Cfb 0.2 0.1 -VBB Rbe 0 0.1 1 10 100 IC / A Fig.3. Switching times test circuit. September 1997 Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 3 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX ts, tf / us VBESAT / V 1.2 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C 1.1 Tj = 125 C 1.0 0.9 IC= 0.8 8A 6A 5A 4A 0.7 0.6 0 1 2 IB / A 3 4 IC = 6A 5A tf 0.1 1 IB / A 10 Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V 10 ts Tj = 25 C 110 Tj = 125 C 100 90 Normalised Power Derating PD% 120 with heatsink compound 80 70 8A 60 1 50 6A 40 5A 30 20 IC = 4 A 10 0 0.1 0.1 1 IB / A 0 10 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) Eoff / uJ 10 1000 IC = 6 A 1 5A 100 20 0.1 Zth / (K/W) 0.5 0.2 0.1 0.05 0.02 PD 0.01 D=0 0.001 1E-06 10 0.1 1 IB / A 10 D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; parameter frequency September 1997 tp 4 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor IC / A BU2520DX BU2520AF 100 tp = ICM = 0.01 30 us ICDC 10 100 us Ptot 1 1 ms 0.1 10 ms DC 0.01 1 10 100 1000 VCE / V Fig.13. Forward bias safe operating area. Ths = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 5 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 2.300