DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2001 Oct 31 2004 Jan 15 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage SYMBOL • High current capability PARAMETER MAX. UNIT VCEO collector-emitter voltage −40 V • Improved device reliability due to reduced heat generation IC collector current (DC) −2 A • Replacement for SOT89/SOT223 standard packaged transistor. ICM peak collector current −3 A RCEsat equivalent on-resistance <220 mΩ PINNING APPLICATIONS PIN • Supply line switching circuits DESCRIPTION • Battery management applications 1 base • DC/DC converter applications 2 emitter • Strobe flash units 3 collector • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION handbook, halfpage PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PBSS5240T 2 1 2 ZF* Top view MAM256 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5240T 2004 Jan 15 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −3 A IBM peak base current − −300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW +150 °C Tstg storage temperature −65 Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2. 2004 Jan 15 3 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = −30 V; IE = 0 TYP. MAX. UNIT − − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − − −50 µA − − −100 nA IC = −100 mA 300 450 − IC = −500 mA 260 350 − IC = −1 A 210 290 − IC = −2 A 100 180 − − −55 −100 mV IC = −500 mA; IB = −50 mA − −70 −110 mV IC = −750 mA; IB = −15 mA − −140 −225 mV IC = −1 A; IB = −50 mA − −140 −225 mV IC = −2 A; IB = −200 mA − −240 −350 mV IBEO emitter-base cut-off current VEB = −4 V; IC = 0 hFE DC current gain VCE = −2 V VCEsat MIN. collector-emitter saturation voltage IC = −100 mA; IB = −1 mA RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 160 <220 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA − − −1.1 V VBE(on) base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − − −0.75 V fT transition frequency IC = −100 mA; VCE = −10 V; f = 100 MHz 100 200 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 23 28 pF Note 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2004 Jan 15 4 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC064 1000 MHC067 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 (1) −600 (2) 600 (2) 400 −400 (3) (3) 200 −200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −2V. (1) Tamb = 150 °C. VCE = −2V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC066 −1200 −10 −102 Base-emitter voltage as a function of collector current; typical values. MHC068 −103 handbook, halfpage handbook, halfpage VBEsat (V) −103 −104 IC (mA) VCEsat (mV) −1000 −102 −800 (1) −600 (2) (1) (2) (3) −10 −400 (3) −200 −10−1 −1 −10 −102 −1 −10−1 −103 −104 IC (mA) −1 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 15 5 −10 −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC065 −3000 handbook, halfpage (1) (2) (3) (4) IC (mA) MHC069 103 handbook, halfpage RCEsat (Ω) (5) 102 (6) −2000 (7) (8) 10 (9) −1000 (10) 0 −1 0 (1) (2) (3) (4) IB = −23.0 mA. IB = −20.7 mA. IB = −18.4 mA. IB = −16.1 mA. Fig.6 −2 −3 −4 10−1 −10−1 −5 VCE (V) −1 (5) IB = −13.8 mA. (8) IB = −6.9 mA. IC/IB = 20. (1) Tamb = 150 °C. (6) IB = −11.5 mA. (7) IB = −9.2 mA. (9) IB = −4.6 mA. (10) IB = −2.3 mA. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Collector current as a function of collector-emitter voltage; typical values. 2004 Jan 15 (1) (2) (3) 1 Fig.7 6 −10 −102 −103 −104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 15 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Jan 15 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp9 Date of release: 2004 Jan 15 Document order number: 9397 750 12439