PHILIPS BUK7510-100B

BUK75/7610-100B
TrenchMOS™ standard level FET
Rev. 02 — 19 September 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK7510-100B in SOT78 (TO-220AB)
BUK7610-100B in SOT404 (D2-PAK).
1.2 Features
■ Very low on-state resistance
■ 175 °C rated
■ Q101 compliant
■ Standard level compatible.
1.3 Applications
■ Automotive systems
■ Motors, lamps and solenoids
■ 12 V, 24 V, and 42 V loads
■ General purpose power switching.
1.4 Quick reference data
■ EDS(AL)S ≤ 629 mJ
■ ID ≤ 75 A
■ RDSon = 8.6 mΩ (typ)
■ Ptot ≤ 300 W.
2. Pinning information
Table 1:
Pinning - SOT78 and SOT404, simplified outlines and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to
drain (d)
Simplified outline
Symbol
mb
mb
d
[1]
g
MBB076
2
1
3
MBK116
MBK106
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
s
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
RGS = 20 kΩ
Min
Max
Unit
-
100
V
-
100
V
-
±20
V
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[1]
-
110
A
[2]
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
438
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
300
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[1]
-
110
A
[2]
-
75
A
-
438
A
629
mJ
Source-drain diode
Tmb = 25 °C
reverse drain current (DC)
IDR
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
peak reverse drain current
Avalanche ruggedness
-
EDS(AL)S non-repetitive drain-source avalanche
energy
[1]
[2]
unclamped inductive load; ID = 75 A;
VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
-
Current is limited by power dissipation chip rating
Continuous current is limited by package
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
2 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
03na19
120
03ng70
120
Pder
Capped at 75 A due to package
ID
(A)
(%)
80
80
40
40
0
0
0
50
100
150
200
Tmb (°C)
0
50
100
150
200
Tmb (ºC)
VGS ≥ 10 V
P tot
P der = ----------------------- × 100%
P
°
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
03ng68
Limit RDSon = VDS/ID
tp = 10 µs
ID
(A)
102
100 µs
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
1
102
10
VDS (V)
103
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
3 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Figure 4
-
-
0.5
K/W
SOT78
vertical in still air
-
60
-
K/W
SOT404
mounted on a printed circuit board;
minimum footprint
-
50
-
K/W
Rth(j-mb)
thermal resistance from junction to
mounting base
Rth(j-a)
thermal resistance from junction to ambient
4.1 Transient thermal impedance
03ng69
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
0.02
10-2
δ=
P
tp
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
4 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
100
-
-
V
Tj = −55 °C
89
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
Tj = 25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
Tj = 25 °C
-
8.6
10
mΩ
Tj = 175 °C
-
-
25
mΩ
-
80
-
nC
-
18
-
nC
-
22
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
-
5080
6773
pF
-
677
812
pF
-
168
230
pF
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
33
-
ns
-
45
-
ns
-
120
-
ns
VDS = 100 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-to-source charge
Qgd
gate-to-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Ld
internal drain inductance
Ls
internal source inductance
VGS = 10 V; VDD = 80 V;
ID = 25 A; Figure 14
-
36
-
ns
from drain lead 6 mm from
package to center of die
-
4.5
-
nH
from contact screw on
mounting base to center of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to center of
die SOT404
-
2.5
-
nH
from source lead to source
bond pad
-
7.5
-
nH
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
5 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
Table 4:
Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.85
1.2
V
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 40 A; VGS = 0 V;
Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
69
-
ns
212
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
-
Rev. 02 — 19 September 2002
6 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
03ng76
350
ID
(A)
300
7
20
RDSon
(mΩ)
10
6.5
8
03ng75
11
10
250
200
9
5.5
150
100
8
50
VGS = 4.5 V
7
0
0
2
4
6
8
5
10
VDS (V)
Tj = 25 °C; tp = 300 µs
10
15
20
VGS (V)
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ng77
13
RDSon
03ng41
2.5
VGS = 6 V
(mΩ)
a
12
2
6.5
9
7
8
11
10
10
1.5
1
9
0.5
8
0
0
50
100
150
200
ID (A)
-60
60
120
180
Tj (ºC)
Tj = 25 °C
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
0
Rev. 02 — 19 September 2002
7 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
03aa35
10-1
ID
(A)
VGS(th)
(V)
4
max
10-2
3
typ
10-3
2
min
10-4
1
10-5
0
10-6
-60
0
60
120
Tj (°C)
180
min
0
2
typ
max
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03ng73
100
gfs
(S)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ng78
7000
C
(pF)
6000
Ciss
80
5000
Coss
60
4000
3000
40
2000
Crss
20
1000
0
0
0
20
40
60
ID (A)
80
Tj = 25 °C; VDS = 25 V
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
1
Rev. 02 — 19 September 2002
8 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
03ng74
100
03ng72
10
ID
(A)
VGS
(V)
80
8
60
VDD = 14 V
6
40
VDD = 80 V
4
Tj = 175 ºC
20
2
Tj = 25 ºC
0
0
0
2
4
VGS (V)
6
0
20
40
60
80
QG (nC)
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03ng71
100
IS
(A)
80
60
40
20
Tj = 175 ºC
Tj = 25 ºC
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
9 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Fig 16. SOT78 (TO-220AB).
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
10 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Fig 17. SOT404 (D2-PAK)
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
11 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
7. Soldering
10.85
10.60
10.50
handbook, full pagewidth
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
5.08
MSD057
occupied area
solder paste
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
12 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
8. Revision history
Table 5:
Revision history
Rev Date
02
20020919
CPCN
Description
-
Product data (9397 750 10281)
Modifications:
•
Description in Section 1 changed from:
N-channel enhancement mode field-effect power transistor in a plastic package using
generation three TrenchMOS™ technology, featuring very low on-state resistance.
to:
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
01
20020409
-
Product data (9397 750 09496)
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
13 of 15
BUK75/7610-100B
Philips Semiconductors
TrenchMOS™ standard level FET
9. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
10. Definitions
11. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 10281
Rev. 02 — 19 September 2002
14 of 15
Philips Semiconductors
BUK75/7610-100B
TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 19 September 2002
Document order number: 9397 750 10281
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.