DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities. PIN DESCRIPTION Code: BFQ34/01 1 collector 2 emitter 3 base 4 emitter 4 lfpage 1 3 2 Top view MBK187 Fig.1 SOT122A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V IC collector current − 150 mA Ptot total power dissipation up to Tc = 160 °C − 2.7 W fT transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz 4 − GHz Vo output voltage IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; dim = −60 dB f(p+q-r) = 793.25 MHz 1.2 − V PL1 output power at 1 dB gain compression IC = 120 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C 26 − dBm ITO third order intercept point IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C 45 − dBm WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 150 mA Ptot total power dissipation up to Tc = 160 °C − 2.7 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL Rth j-c September 1995 PARAMETER THERMAL RESISTANCE thermal resistance from junction to case 15 K/W 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain transition frequency fT CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 15 V − − 100 µA IC = 75 mA; VCE = 15 V 25 70 − IC = 150 mA; VCE = 15 V 25 70 − IC = 75 mA; VCE = 15 V; f = 500 MHz 3 3.5 − GHz IC = 150 mA; VCE = 15 V; f = 500 MHz 3.5 4 − GHz Cc collector capacitance IE = 0; VCB = 15 V; f = 1 MHz − 2 2.75 pF Ce emitter capacitance IC = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF Cre feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 °C − 1 1.35 pF Cc-s collector-stud capacitance note 1 − 0.8 − pF F noise figure (see Fig.2) IC = 120 mA; VCE = 15 V; f = 500 MHz; Tamb = 25 °C − 8 − dB GUM maximum unilateral power gain (note 2) IC = 120 mA; VCE = 15 V; f = 500 MHz; Tamb = 25 °C − 16.3 − dB Vo output voltage Figs 2 and 7 and note 3 − 1.2 − V PL1 output power at 1 dB gain compression (see Fig.2) note 4 − 26 − dBm ITO third order intercept point (see Fig.2) note 5 − 45 − dBm Notes 1. Measured with grounded emitter and base. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 3. dim = −60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 4. IC = 120 mA; VCE = 15 V; Tamb = 25 °C; RL = 75 Ω; measured at f = 800 MHz. 5. IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Pp = ITO − 6 dB; fp = 800 MHz; Pq = ITO − 6 dB; fq = 801 MHz; measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz. September 1995 4 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 MBB361 120 handbook, halfpage h FE 2.2 nF handbook, halfpage2.2 nF VBB VCC 80 L2 L1 200 Ω 10 nF output 75 Ω 10 nF 10 nF input 75 Ω 40 DUT 0.68 pF 24 Ω 24 Ω 0 0 MEA322 40 f = 40 to 860 MHz; L1 = L2 = 5 µH Ferroxcube coil. VCE = 15 V; Tj = 25 °C. Fig.2 Intermodulation distortion MATV test circuit. Fig.3 MEA320 80 120 DC current gain as a function of collector current. MBB357 8 6 160 I C (mA) handbook, halfpage handbook, halfpage fT (GHz) Cc (pF) 6 4 4 2 2 0 0 0 10 VCB (V) 0 20 40 80 160 I C (mA) IE = 0; f = 1 MHz; Tj = 25 °C. VCE = 15 V; f = 500 MHz; Tj = 25 °C. Fig.4 Fig.5 Collector capacitance as a function of collector-base voltage. September 1995 120 5 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 MEA319 MEA321 20 40 handbook, halfpage handbook, halfpage d im gain (dB) (dB) 30 30 40 20 50 G UM 10 Is12 I 0 10 –1 60 2 70 1 f (GHz) 10 Ic = 120 mA; VCE = 15 V; Tamb = 25 °C. 100 I C (mA) 150 Vo = 1.2 V; VCE = 15 V; f(p+q−r) = 793.25 MHz Fig.7 Fig.6 Gain as a function of frequency. September 1995 50 6 Intermodulation distortion as a function of collector current. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 1 handbook, full pagewidth 0.5 2 0.2 5 1200 MHz 1000 800 +j 0.2 0 0.5 500 10 1 2 5 10 ∞ –j 10 200 5 0.2 2 0.5 MEA315 1 Ic = 120 mA; VCE = 15 V; Tamb= 25 °C. Zo = 50 Ω. Fig.8 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 200 MHz 150° 30° 500 800 1000 1200 180° +ϕ 5 10 15 0° −ϕ 30° 150° 60° 120° 90° MEA317 Ic = 120 mA; VCE = 15 V; Tamb= 25 °C. Fig.9 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 90° handbook, full pagewidth 120° 60° 1200 1000 150° 30° 800 500 +ϕ 200 MHz 0.1 180° 0.2 0° −ϕ 30° 150° 60° 120° MEA318 90° Ic = 120 mA; VCE = 15 V; Tamb= 25 °C. Fig.10 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 –j 0.5 1000 1200 1 2 5 ∞ 800 10 500 200 MHz 0.2 10 5 2 0.5 1 MEA316 Ic = 120 mA; VCE = 15 V; Tamb= 25 °C. Zo = 50 Ω. Fig.11 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A September 1995 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 10