IRF IRHYB597034CM

PD-97000
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597034CM
60V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number
Radiation Level RDS(on)
IRHYB597034CM 100K Rads (Si) 0.087Ω
IRHYB593034CM 300K Rads (Si) 0.087Ω
ID
-20A
-20A
Low-Ohmic
TO-257AA (Tab-less)
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-20
-13
-80
75
0.6
±20
134
-20
7.5
-4.9
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
3.7 ( Typical )
g
For footnotes refer to the last page
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1
05/17/05
IRHYB597034CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
-60
∆BVDSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
10
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
Test Conditions
—
—
V
-0.066
—
V/°C
—
0.087
Ω
VGS = -12V, ID = -13A Ã
—
—
—
—
-4.0
—
-10
-25
V
S( )
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -13A Ã
VDS= -48V ,VGS = 0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -20A
VDS = -30V
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
18
13
25
65
75
50
—
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1560
565
62
6.5
—
—
—
—
Ω
BVDSS
Parameter
µA
nA
nC
ns
nH
pF
Ω
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VDD = -30V, ID = -20A
VGS = -12V, RG = 7.5Ω
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
VGS = 0V, VDS = - 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-20
-80
-5.0
100
200
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -20A, VGS = 0V Ã
Tj = 25°C, IF =-20A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYB597034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1
Min Max
300KRads(Si)2
Min
Max
Test Conditions
Units
BVDSS
V GS(th)
IGSS
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
-60
-2.0
—
—
—
-4.0
-100
100
-60
-2.0
—
—
—
-4.0
-100
100
IDSS
RDS(on)
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Ã
Static Drain-to-Source On-State
Resistance(Low-OhmicTO-257AA)
Diode Forward Voltage Ã
—
—
-10
0.087
—
—
-10
0.087
µA
Ω
VDS = -48V, VGS =0V
VGS = -12V, ID =-13A
—
0.087
—
0.087
Ω
VGS = -12V, ID =-13A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -20A
RDS(on)
VSD
VGS = 0V, ID = -1.0mA
V GS = VDS , ID = -1.0mA
VGS =-20V
V GS = 20 V
V
nA
1. Part number IRHYB597034CM
2. Part number IRHYB593034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
33.1
- 60
- 60
- 60
- 60
- 60
30.5
- 60
- 60
- 60
- 45
- 25
28.4
- 60
- 60
- 60
—
—
Energy
(MeV)
252.6
314
350
VDS
Br
I
Au
LET
(MeV/(mg/cm2))
37.9
59.7
82.3
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYB597034CM
Pre-Irradiation
100
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
-5.0V
60µs PULSE WIDTH
Tj = 25°C
1
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
2.0
TJ = 150°C
T J = 25°C
VDS = -25V
15 WIDTH
60µs PULSE
10
ID = -20A
1.5
1.0
0.5
VGS = -12V
0.0
5
5.5
6
6.5
7
7.5
8
8.5
9
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
-5.0V
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2500
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID = -20A
-VGS, Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHYB597034CM
C oss = C ds + C gd
Ciss
1500
Coss
1000
500
VDS= -48V
VDS= -30V
VDS= -12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
10
30
40
50
60
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
T J = 150°C
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
20
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
VGS = 0V
1
0.1
0
1
2
3
4
5
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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6
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHYB597034CM
Pre-Irradiation
20
V GS
16
-I D, Drain Current (A)
RD
V DS
D.U.T.
RG
-
+
12
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYB597034CM
L
250
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-8.9A
-12.6A
BOTTOM -20A
TOP
200
150
100
50
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHYB597034CM
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L=0.67mH
Peak IL =- 20A, VGS = -12V
 ISD ≤ - 20A, di/dt ≤ -370A/µs,
VDD ≤ - 60V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-257AA (Tab-less)
A
10.66 [.420]
10.42 [.410]
5.08 [.200]
4.83 [.190]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
NOT ES :
1.
2.
3.
4.
0.13 [.005]
3.05 [.120]
B A
LEAD ASSIGNMENTS
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
T O-257AA TABLES S IS A MODIFIED JE DEC OUTLINE T O-257AA.
1 = DRAIN
2 = SOURCE
3 = GATE
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 05/2005
8
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