IRF IRHMS67260

PD - 94667A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67260
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMS67260 100K Rads (Si)
RDS(on)
0.029Ω
ID
45A*
IRHMS63260
300K Rads (Si)
0.029Ω
45A*
IRHMS64260
600K Rads (Si)
0.029Ω
45A*
IRHMS68260 1000K Rads (Si) 0.029Ω
45A*
International Rectifier’s R6 TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45*
35
180
208
1.67
±20
344
45
20.8
5.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
10/07/03
IRHMS67260
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.21
—
V/°C
—
—
0.029
Ω
VGS = 12V, ID = 35A ➃
2.0
40
—
—
—
—
—
—
4.0
—
10
25
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
240
65
60
40
60
70
30
—
nC
VDS = VGS, I D = 1.0mA
VDS = 25V, IDS = 35A ➃
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 100V
ns
VDD = 100V, ID = 45A
VGS =12V, RG = 2.35Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Ω
BVDSS
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
8045
953
14
1.1
—
—
—
—
pF
VGS = 0V, VDS = 25V
f = 100KHz
Ω
f = 0.73MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
640
10.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 45A, VGS = 0V ➃
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source On-State ➃
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage ➃
Test Conditions
200
2.0
—
—
—
—
—
4.0
100
-100
10
0.029
200
1.5
—
—
—
—
—
4.0
100
-100
25
0.029
nA
—
0.029
—
0.029
Ω
VGS = 12V, ID =35A
—
1.2
—
1.2
V
VGS = 0V, IS = 45A
V
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 160V, VGS =0V
VGS = 12V, ID =35A
1. Part numbers IRHMS67260, IRHMS63260 and IRHMS64260
2. Part number IRHMS68260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-18V
-19V
Xe
59
825
66
200
200
200
200
170
160
-
-
Xe
43
2441
205
200
200
200
200
200
190
180
150
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-20V
250
VDS
200
150
LET=59
100
LET=43
50
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS67260
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
5.0V
10
60µs PULSE WIDTH
Tj = 150°C
1
100
0.1
VDS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain-to-Source Current ( Α)
2.5
T J = 150°C
100
T J = 25°C
VDS = 50V
15
60µs PULSE
WIDTH
5.5
6
6.5
7
7.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
5.0V
8GS
8
ID = 45A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 100KHz
1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12000
10000
Ciss
8000
C
oss
6000
4000
Crss
2000
20
VGS , Gate-to-Source Voltage (V)
14000
C, Capacitance (pF)
IRHMS67260
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
50
1000
ID, Drain-to-Source Current (A)
1000
T J = 150°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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200
250
300
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
T J = 25°C
10
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current ( Α)
ID = 45A
100µs
10
1
0.1
1.4
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHMS67260
Pre-Irradiation
60
LIMITED BY PACKAGE
VGS
50
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
40
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
20
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS67260
1 5V
L
VDS
D .U .T.
RG
IA S
2V0GS
V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
700
ID
20A
28.5A
BOTTOM 45A
TOP
600
500
400
300
200
100
0
25
V (B R )D SS
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHMS67260
Pre-Irradiation
Footnotes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 0.34 mH
Peak IL = 45A, VGS = 12V
➂ I SD ≤ 45A, di/dt ≤ 840A/µs,
VDD ≤ 200V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —Low-Ohmic TO-254AA
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
1.27 [.050]
1.02 [.040]
B
22.73 [.895]
21.21 [.835]
0.84 [.033]
MAX.
0.36 [.014]
4.82 [.190]
3.81 [.150]
2
3.81 [.150]
2X
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
4.06 [.160]
3.56 [.140]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
B A
NOTES :
1.
2.
3.
4.
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
3
17.40 [.685]
16.89 [.665]
1.27 [.050]
1.02 [.040]
A
1
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
PIN AS S IGNMENTS
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
CONTROLLING DIMENS ION: INCH.
CONFORMS T O JEDEC OUTLINE T O-254AA.
1 = DRAIN
2 = S OURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/03
8
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