Bulletin I25204 rev. B 09/03 110/111RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features 110A High current and high surge ratings Hermetic glass-metal seal up to 1200V Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) A 90 °C 172 A @ 50Hz 2080 A @ 60Hz 2180 A @ 50Hz 21.7 KA2s @ 60Hz 19.8 KA2s 800 to 1200 V 110 µs - 40 to 140 °C IT(RMS) I 2t V DRM /V RRM tq Units 110 @ TC ITSM 110/111RIA typical TJ www.irf.com case style TO-209AC (TO-94) 1 110/111RIA Series Bulletin I25204 rev. B 09/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 110/111RIA V DRM/V RRM , max. repetitive VRSM , maximum non- peak and off-state voltage V repetitive peak voltage V 80 800 900 120 1200 1300 I DRM/I RRM max. @ TJ = TJ max. mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature 110/111RIA 110 A 90 °C I T(RMS) Max. RMS on-state current 172 I TSM Max. peak, one-cycle 2080 non-repetitive surge current 2180 I2t Maximum I2t for fusing Units Conditions DC @ 83°C case temperature A V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance No voltage t = 8.3ms reapplied 100% VRRM 1750 t = 10ms t = 8.3ms reapplied 21.7 t = 10ms No voltage 19.8 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2 s 14.0 Maximum I2√t for fusing t = 10ms 1830 15.3 I 2 √t 180° conduction, half sine wave 217 KA2 √s Sinusoidal half wave, Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.82 V (I > π x IT(AV)),TJ = TJ max. 1.02 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 2.16 mΩ (I > π x IT(AV)),TJ = TJ max. 1.70 V TM Max. on-state voltage 1.57 IH Maximum holding current 150 IL Typical latching current 400 V mA Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse T J = 25°C, anode supply 6V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq 2 Typical delay time 110/111RIA 300 Units Conditions A/µs 110 TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs 1 µs Typical turn-off time Gate drive 20V, 20Ω, tr ≤ 1µs Vd = 0.67% VDRM, TJ = 25°C ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 25Ω www.irf.com 110/111RIA Series Bulletin I25204 rev. B 09/03 Blocking Parameter dv/dt 110/111RIA Maximum critical rate of rise of off-state voltage IRRM IDRM Max. peak reverse and off-state leakage current Units Conditions 500 V/µs TJ = TJ max. linear to 80% rated VDRM 20 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM 110/111RIA Maximum peak gate power 12 PG(AV) Maximum average gate power 3.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative TYP. VGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms 10 gate voltage IGT W 20 gate voltage -VGM Units Conditions MAX. DC gate current required 180 - to trigger 80 120 40 - DC gate voltage required 2.5 - to trigger 1.6 2 1 - TJ = - 40°C mA TJ = 25°C TJ = 140°C TJ = - 40°C V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 140°C IGD DC gate current not to trigger 6.0 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter 110/111RIA TJ Max. operating temperature range -40 to 140 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.27 DC operation K/W 0.1 Mounting surface, smooth, flat and greased 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight Case style www.irf.com 130 g TO - 209AC (TO-94) See Outline Table 3 110/111RIA Series Bulletin I25204 rev. B 09/03 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.043 0.031 120° 0.052 0.053 90° 0.066 0.071 60° 0.096 0.101 30° 0.167 0.169 Conditions TJ = TJ max. K/W T J = T J max. Ordering Information Table Device Code 11 1 1 2 RIA 120 3 4 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 3 - Thyristor 4 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) NOTE: For Metric Device M12 x 1.75 Contact Factory 4 www.irf.com 110/111RIA Series Bulletin I25204 rev. B 09/03 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 37 )M IN 79 (0 . FLEXIBLE LEAD 2 20 C.S. 16mm )M 9.5 IN . (0 . 4.3 (0.17) DIA. . 2.5 (0.10) MAX. 8.5 (0.3) DIA. (.025 s.i.) 170 (6.69) C.S. 0.4 mm (.0006 s.i.) 2 Fast-on Terminals RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 215 (8.46) 10 (0.39) RED SHRINK WHITE SHRINK MAX. 10 (0.39) MAX. 23.5 (0.92) MAX. DIA. 21 (0.83) 24 (0.94) MAX. 55 (2.17) MIN. 157 (6.18) RED SILICON RUBBER SW 27 1/2"-20UNF-2A * 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) 140 110/111RIA 111RIA SeriesSeries RthJC (DC) = 0.27 K/W 130 120 Conduction Angle 110 100 30˚ 90 60˚ 90˚ 120˚ 180˚ 80 0 20 40 60 80 100 120 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) * FOR METRIC DEVICE: M12 X 1.75 CONTACT FACTORY 140 110/111RIA 111RIA SeriesSeries RthJC (DC) = 0.27 K/W 130 120 Conduction Period 110 100 30˚ 90 60˚ 90˚ 80 120˚ 180˚ DC 70 0 30 60 90 120 150 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 180 5 110/111RIA Series 180˚ 120˚ 90˚ 60˚ 30˚ 140 RMS Limit 60 Conduction Angle 1.5 K/W 2K /W 40 110/111RIA Series 111RIA Series 4 K/W 80 T J = 140˚C 20 aR elt -D 100 K/ W 0.8 K/ W 1K /W W K/ .3 =0 120 0. 6 5 K/W 0 0 20 40 60 80 100 120 0 Average On-State Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics 220 R DC 180˚ 120˚ 90˚ 60˚ 30˚ 200 180 160 140 A thS Maximum Allowable On-State Power Loss (W) 160 SA R th Maximum Allowable On-State Power Loss (W) Bulletin I25204 rev. B 09/03 = 0. 3 K/ W 0.6 K/ W 0.8 K/W 1K /W 120 100 RMS Limit 80 Conduction Period 60 110/111RIA Series 111RIA Series 40 R 1.5 K/W 2 K/W 4 K/W T = 140˚C J 20 0 -D el ta 5 K/W 0 0 20 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Peak Half Sine Wave On-State Current (A) Fig. 4 - On-state Power Loss Characteristics 2000 2500 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 140˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1800 1600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 140˚C 2000 No Voltage Reapplied Rated Vrrm Reapplied 1400 1500 1200 1000 1000 110/111RIA 111RIA SeriesSeries 110/111RIA 111RIA SeriesSeries 800 1 10 100 500 0.01 0.1 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 110/111RIA Series Instantaneous On-State Current (A) Bulletin I25204 rev. B 09/03 10000 Tj = 25˚C 1000 Tj = 140˚C 100 10 110/111RIA Series 111RIA Series 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.27 K/W (DC Operation) 0.1 0.01 110/111RIA 111RIA SeriesSeries 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thJC Characteristic Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 µs, tp=>6µs b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms tr<=1 µs, tp=>6µs (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300µs (a) (b) 0.1 0.001 IGD 0.01 Tj=-40 ˚C VGD Tj=25 ˚C 1 Tj=140 ˚C Instantaneous Gate Voltage (V) 100 (1) Device: Series Device:110/111RIA 111RIA Series 0.1 1 (2) (3) (4) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 110/111RIA Series Bulletin I25204 rev. B 09/03 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com