IRF IRUH33P253B1M

PD-97041
IRUH33P253B1M
Ultra Low Dropout
Positive Fixed Linear Regulator
+3.3Vin to +2.5Vout at 3.0A
Product Summary
Part Number
Dropout
IO
Vin
Vout
IRUH33P253B1M
0.4V
3.0A
3.3V
2.5V
MO-078AA
Features:
The IRUH33P253B1M is a space qualified, ultra low
dropout linear regulator designed specifically for space
applications. This product has been characterized to a total
ionizing dose of 1.0 Mrad (Si) per MIL-STD-883, Method
1019, Condition D at both high and low dose rates under
biased and unbiased conditions to account for ELDRS
effects in bipolar devices. The ultra low dropout voltage of
0.4V @ 3A makes the part particularly useful for applications
requiring low noise and higher efficiency.
n Total dose to 1.0 Mrad (Si) and low dose
n
n
n
n
n
n
n
capability to 500 krad (Si) allows use in
space applications
Single Event latchup Immune
LET = 84 MeV/(mg/cm2)
Fluency = 1x109 ions/cm2
Low noise, higher efficiency
Ultra low dropout voltage of 0.4V@ 3A out
significantly reduces power consumption
Remote shutdown permits power
sequencing to be easily implemented
Hermetic MO-078AA (TO-258AA)
pack ensures higher reliability
Space Level Screened
This part is also available in 8-Lead Flat Pack
Package as IRUH33P253A1M
Absolute Maximum Ratings
Parameter
Symbol
Value
IO
3.5
A
Input Voltage
Power Dissipation TC = 25°C
Vin
PTOT
7
19
V
W
Thermal Resistance, Junction to Case
Operating Temperature Range
RTHJC
6.5
°C/W
TJ
-55 to +125
TS
TL
-65 to +150
Output Current
Storage Temperature Range
Lead Temperature
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Units
°C
300
1
11/14/05
IRUH33P253B1M
Electrical Characteristics @Ta = 25°C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
2.475
2.5
2.525
Vout
2.375
2.375
-
2.625
2.625
Vin
Vdrop
Ilatch
2.375
2.375
2.9
-3.0
-
2.625
2.625
6.5
0.4
Ishdn
65
-
200
-
1.0
-0.1
-
1.6
+0.1
Vin = 3.3V, IO = 1.5A
Vin = 2.97V, IO = 50mA
Output Voltage
Vin = 2.97V, IO = 3.0A
Vin = 3.63V, IO = 50mA
Vin = 3.63V, IO = 3.0A
Input Voltage Range - Operating IO = 3.0A
IO = 3.0A, Vout = 2.5V
Dropout Voltage
Vin = 3.3V, Overcurrent Latch Up
Current Limit
F = 120Hz, Iout = 50mA
Ripple Rejection
Vshdn = 5.0V
Shutdown Source Current
Shutdown Pin Threshold
c
Output Voltage at Shutdown
Vin = 3.3V
Vin = 3.3V, IO = 50mA, Vshdn = +5.0V
Vshdn
Vout (shdn)
Units
V
A
dB
µA
V
Electrical Characteristics @Ta = -55°C to 125°C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
2.375
2.5
2.625
Vout
2.375
2.375
-
2.625
2.625
Vin
Vdrop
Ilatch
2.375
2.375
2.9
3.0
-
2.625
2.625
6.5
0.4
Ishdn
65
-
200
-
1.0
-0.1
-
1.6
+0.1
Vin = 3.3V, IO = 1.5A
Vin = 2.97V, IO = 50mA
Output Voltage
Vin = 2.97V, IO = 3.0A
Vin = 3.63V, IO = 50mA
Vin = 3.63V, IO = 3.0A
Input Voltage Range - Operating IO = 3.0A
IO = 3.0A, Vout = 2.5V
Dropout Voltage
Vin = 3.3V, Overcurrent Latch Up
Current Limit
F = 120Hz, Iout = 50mA
Ripple Rejection
Vshdn = 5.0V
Shutdown Source Current
c
Shutdown Pin Threshold
Vin = 3.3V
Output Voltage at Shutdown
Vin = 3.3V, IO = 50mA, Vshdn = +5.0V
Vshdn
Vout (shdn)
Units
V
A
dB
µA
V
Refer page 3 for Notes for Electrical Characteristic Tables
2
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IRUH33P253B1M
Electrical Characteristics @Ta = 25°C (Unless Otherwise Specified)
Post-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
2.375
-
2.625
Vout
2.375
2.375
-
2.625
2.625
Imax
2.375
2.375
3.0
-
Vout (shdn)
40
-0.1
-
2.625
2.625
+0.1
Vin = 3.3V, IO = 1.5A
Vin = 2.97V, IO = 50mA
Output Voltage
Vin = 2.97V, IO = 3.0A
Vin = 3.63V, IO = 50mA
Current Limit
Vin = 3.63V, IO = 3.0A
Vin = 3.3V
Ripple Rejection
F = 120Hz, Iout = 50mA
Output Voltage at Shutdown
Vin = 3.3V, IO = 50mA, Vshdn = +5.0V
Units
V
A
dB
V
Notes for Electrical Characteristic Tables
 VShutdown ramp from 0.8V to 4.8V, output monitored for a 100mV drop below the nominal specification for Vout
Pre-Radiation Characteristics
OMR9601 Ripple Rejection vs. Frequency
3A
120
1.5A
100
.75A
.50A
(db)
80
60
40
20
0
100
1,000
10,000
100,000
1,000,000
Frequency (Hz)
Fig 1. Ripple Rejection Vs Frequency
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3
IRUH33P253B1M
Post-Radiation Characteristics
Total Ionizing Dose (TID)
2.70
2.68
Hybrid Regulator
Unbiased @90 r/s
250C
2.66
2.64
2.62
Vout (V)
2.60
2.58
2.56
Hybrid Regulator
Biased @ 90 r/s
250C
2.54
2.52
2.50
2.48
Test Data (Reg. Dr.)
no load @ 50 r/s, 250C
2.46
1
10
100
1000
Total Dose Level (krads)
Fig 2. Voltage Output Vs Total Ionizing Dose
Fig 3. Voltage Output Vs Total Ionizing Dose
4
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IRUH33P253B1M
Post-Radiation Characteristics
Enhanced Low Dose Rate Sensitivity (Dose Rate = 0.1 Rad/s)
Fig 4. Voltage Output Vs Total Ionizing Dose
Single Event Latch-up
Fig 5. Voltage Output Vs Time
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5
IRUH33P253B1M
Vout
Vin
Vin
100uF 16V
Tantalum
Vout
IRUH33P253B1M
SHDN
1.0uFx10
Ceramic X 7R
GND
1000uF 6.3V
Low ESR Tantalum
Ground
Fig 6. Typical Application Circuit
Input Capacitance
Recommended input capacitance for a generic application is a 100µF, 16V tantalum capacitor. However,
the input capacitance is not critical to the stability of the regulator and is therefore application dependent. In
designs with a clean bus voltage that is situated close to the input of the regulator, only a small ceramic
capacitor will be needed to decouple high frequency noise. On the other hand, in designs with a noisy bus,
a larger capacitor will be needed. Care should be taken to ensure that the input to the regulator is
sufficiently free of noise and disturbances.
Output Capacitance
Like most ultra low dropout voltage regulators, IRUH33P253B1M requires the use of an output capacitor
as part of the device frequency compensation. The device requires a minimum of 220µF tantalum to ensure
stability.
Many different types of capacitor are available and have widely varying characteristics. These capacitors
differ in capacitor tolerance, equivalent series resistance (ESR), equivalent series inductance and
capacitance temperature coefficient. The IRUH33P253B1M frequency compensation optimizes frequency
response with low ESR capacitors. In general, use capacitors with an ESR of less than 50 mΩ for heavy
load applications.
High quality bypass capacitors must also be used to limit the high frequency noise generated by the load.
Multiple small ceramic capacitors are typically required to limit parasitic inductance (ESL) and ESR in the
capacitors to acceptable levels.
The upper limit of the capacitance is governed by the delayed over-current latch function of the regulator.
The regulator has a protection circuit that will latch the device off in the event of a short circuit. However,
since it is known that the regulator will draw a large in-rush current upon startup, the latch-off is delayed
by about 10ms to allow the output capacitors to charge to a steady state without shutting down. During
this period, the regulator will have an output current at its maximum of around 5A typical. Therefore, the
maximum output capacitance can be as high as 20,000uF without causing device to latch-off during start-up.
Figure 6 shows a typical application circuit. The output load capacitor consists of one tantalum capacitor
(or more in parallel) of 1,000µF with ESR no high than 50 mΩ, and 10 x 1.0µF X7R ceramic caps. This
will give approximately 59 degrees phase and 24dB gain margin.
6
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IRUH33P253B1M
V in
V out
D rive
S hutdown
G nd
G round
Fig 7. Simplified Schematic Circuit
Space Level Screening Requirements
TEST/INSPECTION
Pre Seal Burn-In
SCREENING LEVEL
MIL-STD-883
SPACE
METHOD
Optional
1030
Nondestructive Bond Pull
100%
2023
Internal Visual
100%
2017
1010
Temperature Cycle
100%
Constant Acceleration
100%
2001
Mechanical Shock
100%
2002
PIND
100%
2020
Pre Burn-In-Electrical
100%
Burn-In
100%
Final Electrical
100%
1015
Seal
100%
1014
Radiographic
External Visual
100%
100%
2012
2009
Note:
International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
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7
IRUH33P253B1M
Case Outline and Dimensions - MO-078AA
Pin Assignment
Pin #
1
Pin Description
Vin
2
3
GND
Vout
4
SHUTDOWN
5
N/C
Notes:
1) All dimensions are in inches
Part Numbering Nomenclature
IR
Linear Regulator Module
U = Ultra Low Dropout Regulator
Radiation Hardening
U
H
33
P
25
3
B
1M
P
Screening
P = Unscreened, 25°C
Electrical Test ( Not for Qual)
K = Space Level Screening
H = RAD Hardened or Tolerant
RAD Level
Input Voltage
1M = 1M Rads
33 = 3.3V
Package Code
Polarity
B = MO-078AA
P = Positive
Output Voltage
Maximum Output Current
25 = 2.5V
3 = 3 Amp
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/05
8
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