DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification Supersedes data of May 1996 1996 Sep 30 Philips Semiconductors Product specification Damper diode BY328 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack • Also available with preformed leads for easy insertion. , 2/3 page k(Datasheet) APPLICATIONS • Damper diode in high frequency horizontal deflection circuits up to 38 kHz. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1500 V VRRM repetitive peak reverse voltage − 1500 V VR continuous reverse voltage − 1400 V IFWM working peak forward current Ttp = 55 °C; lead length = 10 mm see Fig.2 − 6.0 A Tamb = 55 °C; PCB mounting (see Fig.5); see Fig.2 − 4.7 A Tamb = 55 °C; PCB mounting (see Fig.4); see Fig 2 − 3.0 A − 10 A − 60 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C 1996 Sep 30 t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax 2 Philips Semiconductors Product specification Damper diode BY328 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS IF = 5 A; Tj = Tj max; see Fig.3 MAX. UNIT VF forward voltage IR reverse current VR = VRmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.6 500 ns tfr forward recovery time when switched to IF = 5 A in 50 ns; Tj = Tj max; see Fig.7 500 ns IF = 5 A; see Fig.3 1.35 V 1.45 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W mounted as shown in Fig.5 40 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 30 3 Philips Semiconductors Product specification Damper diode BY328 GRAPHICAL DATA MBH413 4 MBE936 5 handbook, halfpage handbook, halfpage IF (A) Ptot (W) 4 3 3 2 2 1 1 0 0 2 4 6 0 8 VF (V) 1 0 IFWM (A) Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Curves include power dissipation due to switching losses. Dotted line: Tj = 150 °C; solid line: Tj = 25 °C. Fig.2 Fig.3 Maximum total power dissipation as a function of working peak forward current. Forward current as a function of forward voltage; maximum values. 35 handbook, halfpage 10 50 handbook, halfpage 2 25 3 cm2 copper 7 3 cm2 copper 50 30 10 2 3 MGA204 MGA200 25.4 Dimensions in mm. Dimensions in mm. Fig.5 Fig.4 Device mounted on a printed-circuit board. 1996 Sep 30 4 Mounting with additional printed circuit board for heat sink purposes. Philips Semiconductors Product specification Damper diode BY328 handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.6 Test circuit and reverse recovery time waveform and definition. MGD600 handbook, halfpage VF 90% t fr 100% t IF 10% t Fig.7 Forward recovery time definition. 1996 Sep 30 5 MAM057 Philips Semiconductors Product specification Damper diode BY328 APPLICATION INFORMATION For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9. The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2. The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time of the diode is shorter, allowing a higher IFWM (see Fig.2). handbook, horizontal halfpage horizontal handbook, halfpage deflection transistor D1 deflection transistor LY D1 Cf LY Cs + (E-W) MBE934 MBE935 D1 = BY328. D1 = BY328. Fig.8 Fig.9 Application in basic high-voltage E/W modulator circuit. Application in basic horizontal deflection circuit. handbook, full pagewidth I FRM IF I FWM time VRRM VR time tp T MCD430 - 1 Fig.10 Basic application waveforms. 1996 Sep 30 6 Philips Semiconductors Product specification Damper diode BY328 , PACKAGE OUTLINE k handbook, full pagewidth 4.5 max 28 min 5.0 max Dimensions in mm. The marking band indicates the cathode. 28 min a 1.35 max MBC049 Fig.11 SOD64. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 30 7