DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor Product specification Supersedes data of March 1993 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor BLV59 FEATURES PINNING - SOT171A • Internal input matching to achieve an optimum wideband capability and high power gain • Emitter-ballasting resistors for lower junction temperatures • Titanium-platinum-gold metallization ensures long life and excellent reliability. APPLICATIONS PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter • UHF linear amplifiers in television transmitters. DESCRIPTION handbook, halfpage 2 4 c 6 NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange. b 1 3 e 5 Top view MAM141 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION CW, class-AB f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) 860 25 30 >7 >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 09 2 Philips Semiconductors Product specification UHF linear power transistor BLV59 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC collector current (DC) − 3 A IC(AV) average collector current − 3 A ICM peak collector current f > 1 MHz − 9 A Tmb = 25 °C; f > 1 MHz − 70 W Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C MGP380 MGP379 10 100 handbook, halfpage handbook, halfpage IC (A) Ptot Tamb = 25 °C (W) Th = 70 °C 1 50 (2) (1) 10−1 1 10 VCE (V) 0 102 0 Th (°C) (1) Continuous operation (f > 1 MHz). (2) Short-time operation during mismatch (f > 1 MHz). Rth mb-h = 0.4 K/W. Fig.3 Fig.2 DC SOAR. 1998 Jan 09 100 3 Power/temperature derating curves. 200 Philips Semiconductors Product specification UHF linear power transistor BLV59 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Tmb = 25 °C, Ptot = 50 W UNIT 2.3 K/W 0.4 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V collector-emitter breakdown voltage open base; IC = 100 mA 27 − − V V(BR)CBO collector-base breakdown voltage V(BR)CEO open emitter; IC = 50 mA V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 mA 3.5 − − V ICES collector leakage current VCE = 27 V; VBE = 0 − − 10 mA E(SBR) second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω 4 − − mJ hFE DC current gain VCE = 24 V; IC = 2 A − − Cc collector capacitance VCB = 25 V; IE = ie = 0; f = 1 MHz − 44 − pF Cre feedback capacitance VCE = 25 V; IC = 0; f = 1 MHz − 30 − pF Ccf collector-flange capacitance − 2 − pF 15 MGP382 MGP381 100 100 handbook, halfpage handbook, halfpage VCE = 25 V Cc (pF) hFE 20 V 50 50 0 0 4 IC (A) 0 8 0 10 Tj = 25 °C. IE = ie = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1998 Jan 09 4 20 VCB (V) 30 Collector capacitance as a function of collector-base voltage; typical values Philips Semiconductors Product specification UHF linear power transistor BLV59 APPLICATION INFORMATION RF performance up to Th = 25 °C in a common emitter class-AB circuit; Rth mb-h = 0.4 K/W. MODE OF OPERATION CW, class-AB f (MHz) VCE (V) IC(ZS) (mA) Gp (dB) PL (W) ηC (%) ∆Gp (dB)(1) 860 25 60 >7 typ. 8.5 30 >50 typ. 55 <1 typ. 0.2 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system). Ruggedness in class-AB operation The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load power under the following conditions: VCE = 25 V; f = 860 MHz; Th = 25 °C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA. handbook, full pagewidth C2 C1 C5 L1 50 Ω C3 L2 L3 C4 C6 C7 L4 D.U.T. L6 C8 L5 C10 C12 L9 L10 C11 C13 C14 C16 L11 C15 C18 C17 L7 C9 C19 L8 +VBB +VCC R1 C20 C21 MGP383 Temperature compensated bias (Ri < 0.1 Ω). Fig.6 Class-AB test circuit at 860 MHz. 1998 Jan 09 5 50 Ω Philips Semiconductors Product specification UHF linear power transistor BLV59 List of components (see Figs 6 and 7). COMPONENT DESCRIPTION VALUE C1, C18 multilayer ceramic chip capacitor; note 1 33 pF C2, C14, C16 multilayer ceramic chip capacitor; note 1 3.6 pF C3, C4, C15, C17 film dielectric trimmer 1.4 to 5.5 pF C5, C6 multilayer ceramic chip capacitor; note 1 1.8 pF C7, C8 multilayer ceramic chip capacitor 6.2 pF C9, C21 multilayer ceramic chip capacitor; note 1 330 pF C10, C11 multilayer ceramic chip capacitor; note 2 5.6 pF C12 multilayer ceramic chip capacitor; note 1 5.6 pF C13 multilayer ceramic chip capacitor; note 1 6.2 pF C19 multilayer ceramic chip capacitor; note 1 10 pF C20 electrolytic capacitor 6.8 µF; 63 V DIMENSIONS CATALOGUE No. 2222 809 09001 L1, L11 stripline; note 3 50 Ω 26 mm × 2.4 mm L2, L3 stripline; note 3 50 Ω 9.5 mm × 2.4 mm L4 stripline; note 3 42.6 Ω 6 mm × 3 mm L5 4 turns of closely wound 0.4 mm enamelled copper wire 60 nH int. diameter 3 mm leads 2 × 5 mm L6 stripline; note 3 42.6 Ω 4 mm × 3 mm L7 4 turns of closely wound 1 mm enamelled Cu wire 45 nH int. diameter 4 mm leads 2 × 5 mm L8 Ferroxcube HF choke grade 3B L9 stripline; note 3 50 Ω 9 mm × 2.4 mm L10 stripline; note 3 50 Ω 13.5 mm × 2.4 mm R1 metal film resistor 10 Ω ±5%; 1 W 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32". 1998 Jan 09 6 Philips Semiconductors Product specification UHF linear power transistor BLV59 130 handbook, full pagewidth copper straps copper straps rivets rivets 70 rivets rivets copper straps copper straps L8 +VCC +VBB C19 C9 L5 C5 C7 L2 L3 C8 C6 C2 C1 L1 C3 R1 C10 L4 L6 C20 C21 L7 C12 C14 C16 C18 L10 L9 C11 L11 C13 C4 C15 C17 MGP384 Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board, the other side is unetched and serves as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane. Fig.7 Printed-circuit board and component layout for 860 MHz class-AB test circuit. 1998 Jan 09 7 Philips Semiconductors Product specification UHF linear power transistor BLV59 MGP385 MGP386 50 100 10 handbook, halfpage handbook, halfpage PL Gp (W) 40 ηC (%) Gp (dB) 30 ηC 5 50 20 10 0 0 0 2 0 4 6 8 PS (W) 10 25 0 VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 °C; Rth mb-h = 0.4 K/W; class-AB operation. VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 °C; Rth mb-h = 0.4 K/W; class-AB operation. Fig.8 Fig.9 Load power as a function of source power; typical values. MGP387 2.2 Power gain and efficiency as a function of load power; typical values. MGP388 4 handbook, halfpage 50 PL (W) handbook, halfpage Zi (Ω) ZL (Ω) xi 1.8 3 1.4 RL 2 XL ri 1 0.6 400 500 600 1 700 0 400 800 900 f (MHz) 500 600 700 800 900 f (MHz) VCE = 25 V; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. VCE = 25 V; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. Fig.10 Input impedance as a function of frequency (series components); typical values. Fig.11 Load impedance as a function of frequency (series components); typical values. 1998 Jan 09 8 Philips Semiconductors Product specification UHF linear power transistor BLV59 MGP389 15 handbook, halfpage Gp (dB) 10 5 0 400 600 800 f (MHz) 1000 VCE = 25 V; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. Fig.12 Power gain as a function of load power; typical values. 1998 Jan 09 9 Philips Semiconductors Product specification UHF linear power transistor BLV59 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A 1998 Jan 09 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF linear power transistor BLV59 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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