PHILIPS BLW32

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW32
UHF linear power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
BLW32
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1⁄4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim (1)
dB
Po sync (1)
W
class-A; linear amplifier
860
25
150
70
−60
>
860
25
150
25
−60
typ.
Gp
dB
0,5 >
0,63 typ.
11
12,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING - SOT122A.
PIN
4
handbook, halfpage
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
VCESM
max.
50 V
open base
VCEO
max.
30 V
VEBO
max.
4 V
d.c. or average
IC
max.
650 mA
(peak value); f > 1 MHz
ICM
max.
1000 mA
Total power dissipation up to Tmb = 25 °C
Ptot
max.
10,8 W
Storage temperature
Tstg
Operating junction temperature
Tj
Emitter-base voltage (open collector)
Collector current
MGP429
1
−65 to +150 °C
max.
200 °C
MGP430
15
handbook, halfpage
handbook, halfpage
Ptot
IC
Th = 70 °C
(A)
Tmb = 25 °C
(W)
10
(1)
5
10−1
0
1
10
VCE (V)
0
102
50
Th (°C)
100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 3,75 W; Tmb = 72,3 °C; i.e. Th = 70 °C)
From mounting base to heatsink
August 1986
3
Rth j-mb
=
15,0 K/W
Rth mb-h
=
0,6 K/W
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP431
20
handbook, full pagewidth
Th = 125 °C
Rth j-h
100 °C
50 °C
75 °C
25 °C
(K/W)
0 °C
Tj = 200 °C
175 °C
150 °C
15
125 °C
100 °C
75 °C
10
0
Fig.4
5
10
Ptot (W)
15
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example
Nominal class-A operation: VCE = 25 V; IC = 150 mA; Th = 70 °C.
Fig.4 shows:
Typical device:
August 1986
Rth j-h
max.
15,6 K/W
Tj
max.
130 °C
Rth j-h
typ.
13,5 K/W
Tj
typ.
120 °C
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 2 mA
V(BR)CES
>
50 V
open base; IC = 15 mA
V(BR)CEO
>
30 V
V(BR)EBO
>
4 V
VBE = 0; VCE = 30 V
ICES
<
0,5 mA
VBE = 0; VCE = 30 V; Tj = 175 °C
ICES
<
1,2 mA
hFE
>
typ.
20
40
hFE
<
120
VCEsat
typ.
500 mV
−IE = 150 mA; VCB = 25 V
fT
typ.
3,5 GHz
−IE = 300 mA; VCB = 25 V
fT
typ.
3,4 GHz
Cc
typ.
3,7 pF
IC = 10 mA; VCE = 25 V
Cre
typ.
1,9 pF
Collector-stud capacitance
Ccs
typ.
1,2 pF
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
D.C. current gain
(1)
IC = 150 mA; VCE = 25 V
IC = 150 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage
(1)
IC = 300 mA; IB = 30 mA
Transition frequency at f = 500 MHz
(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP432
MGP433
50
10
handbook, halfpage
handbook, halfpage
VCE = 25 V
Cc
(pF)
hFE
25
5
typ
5V
0
0
0
250
500
IC (mA)
750
0
Fig.5 Typical values; Tj = 25 °C.
10
20
VCB (V)
30
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP434
4
handbook, full pagewidth
typ
fT
(GHz)
3
2
1
0
0
250
500
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 °C.
August 1986
6
−IE (mA)
750
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
APPLICATION INFORMATION
fvision (MHz)
VCE (V)
IC (mA)
Th (°C)
dim(dB) (1)
Po sync (W) (1)
860
25
150
70
−60
>
0,5
>
860
25
150
70
−60
typ.
0,58
typ. 12,2
860
25
150
25
−60
typ.
0,63
typ. 12,2
Gp (dB)
11
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
L1
C1
C3
L2
T.U.T.
L3
C7
L6
L7
50 Ω
50 Ω
C2
C9
L4
C10
C4
C5
L5
C11
C8
C6
C12
C13
C14
C15
+VCC
+VBB
Fig.8 Test circuit at fvision = 860 MHz.
List of components:
C1 = C7 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 17 mm
and 45 mm respectively from transistor edge
C3 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C4 = C5 = 3 pF multilayer chip capacitor (ATC 100A-3RO-C-PX-50)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3 µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (5,0 mm × 4,5 mm)
L2 = stripline (13,2 mm × 4,5 mm)
L3 = stripline (15,0 mm × 4,5 mm)
L4 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L5 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 4 mm
L6 = stripline (37,0 mm × 4,5 mm)
L7 = stripline (13,5 mm × 4,5 mm)
August 1986
7
MGP435
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
L1; L2; L3; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74);
thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
114.5
handbook, full pagewidth
46
C11
C13
C10
+VBB
C15
+VCC
+
C14
C9
L4
C12
C4
L5
L2
L1
C3
C1
C2
L7
L6
L3
C7
C5
C6
C8
MGP436
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
List of components:
+Vs
D2
C1 = 100 pF ceramic capacitor
R6
C4
C2 = C3 = 100 nF polyester capacitor
C4 = 10 µF/25 V solid aluminium
R1
+VCC
electrolytic capacitor
D1
C1
R1 = 150 Ω carbon resistor (0,25 W)
TR1
R2
C2
R2 = 100 Ω preset potentiometer (0,1 W)
R7
C3
R3 = 82 Ω carbon resistor (0,25 W)
+VBB
R3
R4 = R5 = 2,2 kΩ carbon resistor (0,25 W)
R8
R6 = 12 Ω carbon resistor (0,5 W)
R9
R4
R7 = R8 = 820 Ω carbon resistor (0,25 W)
R5
R9 = 33 Ω carbon resistor (0,25 W)
0
MGP437
Fig.10 Bias circuit for class-A amplifier at
fvision = 860 MHz.
D1
= BZY88-C3V3
D2
= BY206
TR1
= BD136
MGP438
−50
handbook, full pagewidth
dim
(dB)
30
dcm
(%)
dim
−55
20
−60
−65
10
dcm
0
0
0.5
1
1.5
Po sync (W)
2
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power.
Typical values; VCE = 25 V; IC = 150 mA; fvision = 860 MHz; − − − Th = 25 °C;  Th = 70 °C.
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤ −75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB.
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP439
10
ri, xi
MGP440
100
handbook, halfpage
handbook, halfpage
ri
RL, XL
(Ω)
RL
(Ω)
75
0
xi
−10
50
XL
−20
−30
10
25
102
f (MHz)
0
10
103
Typical values; VCE = 25 V;
IC = 150 mA; Th = 70 °C
102
f (MHz)
103
Typical values; VCE = 25 V;
IC = 150 mA; Th = 70 °C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness
The BLW32 is capable of withstanding a load mismatch
(VSWR = 50 through all phases) under the following
conditions:
MGP441
35
handbook, halfpage
f = 860 MHz; VCE = 25 V; IC = 150 mA;
Th = 70 °C and PL = 1 W.
Gp
(dB)
25
15
5
10
102
f (MHz)
103
Typical values; VCE = 25 V;
IC = 150 mA; Th = 70 °C
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
A
ceramic
BeO
metal
Q
c
N1
A
D1
w1 M A
D2
N
M
W
N3
M1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M1
M
N
N1
max.
N3
Q
W
w1
α
mm
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24
6.93
27.56
25.78
9.91
9.14
3.18
2.66
1.66
1.39
11.82
11.04
1.02
3.86
2.92
3.38
2.74
8-32
UNC
0.381
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122A
August 1986
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
12