Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V 5.5 0.15 1500 800 11 29 45 5.0 0.3 V V A A W V A µs PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.1 A f = 64 kHz ICsat = 5.5 A; f = 64 kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 11 29 7 10 175 7 45 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 1.0 - mA V V 5 14 8 5.0 1.0 10.3 V V TYP. MAX. UNIT 1.5 0.15 2.0 0.3 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.5 A; IB = 1.1 A IC = 5.5 A; IB = 1.1 A IC = 1 A; VCE = 5 V IC = 5.5 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (64 kHz line deflection circuit) ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF; VCC 145 V; IB(end) = 0.56 A; LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A Turn-off storage time Turn-off fall time TRANSISTOR IC ICsat ICsat 90 % DIODE t IB IC I B end 10 % tf t 5 us t ts 6.5 us IB IBend 16 us t VCE t - IBM Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF + 150 v nominal adjust for ICsat VCEsat / V 10 BU2523AF/X Ths = 25 C Ths = 85 C Lc 1 IC/IB = 10 LB IBend IC/IB = 5 T.U.T. 0.1 Cfb -VBB 0.01 0.1 10 100 IC / A Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.3. Switching times test circuit. hFE 1 BU2523AF/X VBEsat / V 100 BU2523AF/X 1.2 VCE = 1 V Ths = 25 C Ths = 85 C Ths = 25 C Ths = 85 C 1.1 IC = 6 A 1 10 0.9 0.8 IC = 4.5 A 0.7 1 0.01 0.1 1 10 IC / A 0.6 100 Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V hFE 0 1 2 3 IB / A 4 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC BU2523AF/X PTOT / W 100 BU2523AF/DF/AX/DX 100 VCE = 5 V Ths = 25 C Ths = 85 C Ths = 25 C Ths = 85 C 10 10 1 0.01 1 0.1 1 10 IC / A 100 Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V September 1997 0 0.5 1 IB / A 1.5 2 Fig.8. Typical losses. PTOT = f (IB); IC =5.5 A; f = 64 kHz 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor ts/tf / us BU2523AF VCC BU2523AF/DF/AX/DX 5 4 LC 3 2 IBend 1 -VBB 0 0 0.5 1 1.5 2 IB / A Normalised Power Derating PD% IC / A 30 with heatsink compound 110 CFB T.U.T. Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH; CFB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A Fig.9. Typical collector storage and fall time. ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz 120 VCL LB BU2523 100 90 80 70 20 Area where fails occur 60 50 10 40 30 20 10 0 100 0 0 20 40 60 80 Ths / C 100 120 Zth / (K/W) 1500 Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) 10 1000 VCE / V 140 BU2525AF BU2523AF/AX Ic(sat) (A) 8 7 1 0.1 0.5 6 0.2 0.1 0.05 5 4 0.02 3 PD 0.01 tp D= tp T 2 1 D=0 0.001 1E-06 t T 1E-04 1E-02 t/s 0 1E+00 10 20 30 40 50 60 70 80 frequency (kHz) Fig.11. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T September 1997 0 Fig.14. ICsat during normal running vs. frequency of operation for optimum performance 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100