PHILIPS TDA8042

INTEGRATED CIRCUITS
DATA SHEET
TDA8042M
Quadrature demodulator
Product specification
File under Integrated Circuits, IC02
1997 Apr 11
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
FEATURES
GENERAL DESCRIPTION
• 5 V supply voltage
The TDA8042M is a monolitic bipolar IC dedicated for
BPSK and QPSK demodulation. It is designed to be used
together with the TDA8043 as part of a complete
BPSK/QPSK satellite demodulator and decoder.
The bandwidth of the TDA8042M allows symbol rates up
to 45 Msymbols/s. It includes two matched mixers, an IF
gain controlled amplifier, a symmetrical oscillator, a 0°/90°
phase shifter, two low-pass filters and two matched
baseband amplifiers.
• Internal voltage reference
• 350 to 650 MHz input frequency range
• On-chip 0° and 90° phase shifter
• Symbol rate up to 45 Msymbols/s
• High input sensitivity
• Built-in voltage stabilizer
• AGC amplifier with 21 dB control range
The high input sensitivity makes interfacing with various
sources easy. The input sensitivity can be adjusted by
means of an internal AGC amplifier.
• AGC detector.
APPLICATION
The oscillator operates at half the IF frequency. The local
oscillator signal driving the mixers is made by doubling the
oscillator frequency by an internal frequency multiplier.
The oscillator frequency can be set by the appropriate
external LC tank circuit. The internal wideband phase
shifter provides two oscillator signals which are
90 degrees out of phase to drive the mixers.
• Binary Phase-Shift Keying (BPSK) and Quadrature
Phase-Shift Keying (QPSK) demodulation.
An AGC detector at the I and Q outputs makes it possible
to keep the I and Q signals at a constant level to drive the
analog-to-digital converters of the TDA8043.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
Vi(RF)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
4.75
5.0
5.25
V
54
67.5
81
mA
operating input level
−
57
−
dBµV
fi(RF)
RF input signal frequency
350
−
650
MHz
VolQ(p-p)
I and Q output voltage (peak-to-peak value)
−
0.8
−
V
∆EΦ(I-Q)
phase matching error between I and Q channels
−
0.7
2
deg
∆EG(I-Q)
gain matching error between I and Q channels
−
0.15
0.8
dB
∆Gtilt
gain tilt error between I and Q channels
−
0.3
0.5
dB
VCC = 5.0 V
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA8042M
SSOP20
1997 Apr 11
DESCRIPTION
plastic shrink small outline package; 20 leads; body width 4.4 mm
2
VERSION
SOT266-1
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
BLOCK DIAGRAM
handbook, full pagewidth
IDET
GND1
VAGC
IOUT
GND2
1
20
DET
2
19
I
3
VOLTAGE
REFERENCE
4
5
17
×
16
VCO
IFA
IFB
VCC2
QOUT
6
0°
7
8
×2
90°
15
14
13
×
32
9
10
GND1
18
12
11
Q
TDA8042M
MBH968
Fig.1 Block diagram.
1997 Apr 11
3
VTH
GND1
VCC1
OSCDIS
OSCA
OSCB
GND1
FDIV(A)
FDIV(B)
VCC1
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
PINNING
SYMBOL
PIN
DESCRIPTION
IDET
1
AGC detector output signal
GND1
2
ground
VAGC
3
gain control input voltage
IOUT
4
I channel amplifier output
GND2
5
ground
IFA
6
IF input A
IFB
7
IF input B
VCC2
8
supply voltage 2
QOUT
9
Q channel amplifier output
IFA 6
15 OSCB
GND1
10
ground
IFB 7
14 GND1
VCC1
11
supply voltage 1
FDIV(B)
12
prescaler output B
FDIV(A)
13
prescaler output A
GND1
14
ground
OSCB
15
oscillator tank circuit B
OSCA
16
oscillator tank circuit A
OSCDIS
17
oscillator disable input
VCC1
18
supply voltage 1
GND1
19
ground
VTH
20
AGC threshold voltage input
1997 Apr 11
handbook, halfpage
IDET 1
20 VTH
GND1 2
19 GND1
VAGC 3
18 VCC1
IOUT 4
17 OSCDIS
GND2 5
16 OSCA
TDA8042M
VCC2 8
13 FDIV(A)
QOUT 9
12 FDIV(B)
GND1 10
11 VCC1
MBH967
Fig.2 Pin configuration.
4
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
supply voltage
−0.3
+6.0
V
Vi
input voltage on all pins
−0.3
VCC
V
Ptot
total power dissipation
−
470
mW
Tstg
IC storage temperature
−55
+150
°C
Tj
junction temperature
−
+150
°C
0
+70(1)
°C
Tamb
operating ambient temperature
Note
1. The operating ambient temperature can be extended up to +85 °C providing the supply voltage remains lower or
equal to 5.2 V in order to maintain the junction temperature below 150 °C.
QUALITY SPECIFICATION
All pins withstand the ESD test in accordance with “UZW-BO/FQ-A302 (human body model)” and with
“UZW-BO/FQ-B302 (machine model)”. These numbers can be found in the “Quality reference Handbook”. The handbook
can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1997 Apr 11
PARAMETER
thermal resistance from junction to ambient in free air
5
VALUE
UNIT
120
K/W
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL(IQ) = 1 kΩ; measured in application circuit of Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VCC1
supply voltage
4.75
5.0
5.25
V
VCC2
supply voltage
4.75
5.0
5.25
V
ICC1
supply current
VCC1 = VCC2 = 5.0 V 41
51
61
mA
ICC2
supply current
VCC1 = VCC2 = 5.0 V 13
16.5
20
mA
21
29
−
dB
input level = Vi(RF)min
0.5
−
2
V
input level = Vi(RF)max
3.5
−
4.5
V
−
20
−
kΩ
Vo = 1.6 V (peak-to-peak value)
−
3.6
−
V
Vo = 0.8 V (peak-to-peak value)
−
2.4
−
V
Vo = 0.4 V (peak-to-peak value)
−
1.8
−
V
−
10
−
kΩ
−
1
−
mA
350
−
650
MHz
AGC
GCR
gain control range
GVAGC
voltage gain control at pin 3
RiVAGC
input resistance at pin 3
Vth
AGC threshold voltage
RiVTH
VTH input resistance
Idet
maximum AGC detector output current
(absolute value)
note 1
note 2
note 3
QPSK demodulator
fi(RF)
RF input signal frequency
Ri(RF)
RF input impedance (resistive part)
fi(RF) = 480 MHz
−
50
−
Ω
Xi(RF)
RF input impedance (reactive part)
fi(RF) = 480 MHz
−
19
−
Ω
Vi(RF)
operating RF input level
note 1
57
−
78
dBµV
∆EΦ(I-Q)
phase matching error between I and Q
channels
note 4
−
0.7
2
deg
∆EG(I-Q)
gain matching error between I and Q channels note 5
−
0.15
0.8
dB
∆Gtilt
gain tilt error between I and Q channels
note 6
−
0.3
0.5
dB
F
DSB noise figure
source
impedance = 50 Ω;
note 7
−
13
17
dB
d3(IQ)
third-order intermodulation distortion in I and
Q channels
note 8
−
50
−
dB
1997 Apr 11
6
Philips Semiconductors
Product specification
Quadrature demodulator
SYMBOL
TDA8042M
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Oscillator
fosc
oscillator frequency
note 9
175
−
325
MHz
∆fosc
frequency drift
note 10
−
−
500
kHz
∆VCC = ±5%
−
−
100
kHz
measured10 kHz
from fosc; note 11
−
−
91
dBc/Hz
oscillator disabled
−
−
1.0
V
oscillator enabled
4.0
−
−
V
V
Nosc
oscillator phase noise
Vosc(dis)
oscillator disable voltage at pin 17
Prescaler
VOH
HIGH level output voltage
note 12
4.0
−
−
VOL
LOW level output voltage
note 12
−
−
3.35
V
δ
output duty cycle
40
50
60
%
DIVspu(IQ)
output spurious voltage at I and Q outputs
−
−50
−
dB
note 13
I and Q internal filters
B−1
bandwidth for 1 dB attenuation
30
−
−
MHz
B−30
bandwidth for 30 dB attenuation
−
450
−
MHz
−
2.45
−
V
−
0.8
−
V
I and Q output amplifiers
VO(IQ)(DC)
I and Q channels DC output voltage
Vo(IQ)(p-p)
I and Q channels output voltage
(peak-to-peak value)
Vclip(p-p)
I and Q output clipping level
(peak-to-peak value)
RL(IQ)
I and Q channels output load resistance
Ro(IQ)
αct(I-Q)
note 14
1.8
V
500
−
−
Ω
I and Q channels output resistance
−
67
−
Ω
crosstalk between I and Q channels
30
−
−
dB
note 15
Notes
1. The voltage gain control range (GVAGC) is defined as the DC voltage to be applied on pin 3 to get a signal level of
800 mV (peak-to-peak value) at I and Q outputs.
The lowest control voltage corresponds to the highest sensitivity and gain.
2. Vth is the level of voltage to be applied at pin 20 to get a current Idet of 0.5 mA at pin 1. This voltage depends on the
amplitude of the signal at I and Q outputs.
The AGC threshold voltage can be set by a resistive voltage divider connected at pin 20. Without the external
resistors Vth is set at a value close to 2.35 V.
3. The current Idet increases when the output level (at pins 4 and 9) increases above the value set by the adjustment of
Vth.
4. The phase error is defined as the phase quadrature imbalance between I and Q channels.
5. The gain error is defined as the phase quadrature imbalance between I and Q channels.
6. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency
band of ±30 MHz around fi(RF). The specified tilt is the maximum tilt value found in one of the I and Q channels.
1997 Apr 11
7
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
7. The specified noise figure is the maximum value obtained from I and Q channels noise measurement. The figure
holds for the maximum gain (GVAGC = 0.5 V).
8. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in I and
Q channels. The specified value is the minimum distance between wanted signal and intermodulation products
measured at the output for a wanted output level of 0.8 V (peak-to-peak value).
9. The oscillator is tuned with an appropriate tank circuit designed for each frequency limit.
10. The drift of the oscillator frequency with temperature is defined for ∆Tamb = 25 °C. It is measured in the application
circuit (see Fig.4) with a temperature compensated tank circuit. The temperature compensation used for this
measurement is realized using the application which is depicted in Fig.3.
11. The phase noise is measured at the oscillator frequency (= 240 MHz). Due to the internal frequency doubler the
phase noise at the input of the mixers will be 6 dB worse.
12. Measured with a high impedance load (RL > 5 kΩ) connected at pins 12 and 13.
13. The prescaler output spurious voltage at I and Q outputs are measured with respect to an output level of 800 mV
(peak-to-peak value).
14. Measured with an input signal fi(RF) + 500 kHz (i.e. 480.5 MHz).
15. The load should be AC-coupled.
handbook, full pagewidth
to pin 15
TOKO ref.:
100 082 93278
8.2 pF
NP0
2.2 pF
NP0
6 pF
N470
to pin 16
MBH969
Fig.3 Temperature compensation circuit.
1997 Apr 11
8
1 pF
N470
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
APPLICATION INFORMATION
handbook, full pagewidth
5V
100
nF
5 kΩ
IDET
test point
GND1
20
1
2
19
3
18
4
17
5
16
5V
VAGC
1 kΩ
100
nF
1 kΩ
IOUT
1 kΩ
VTH
100
nF
NOT ON THE TESTBOARD
VCC1
100
nF
IFA
ANZAC
50 Ω
5V
OSCDIS
100
nF
OSCA
18 pF
TDA8042M
RF
5V
maximum
GND1
100 nF
GND2
+
6
15
7
14
8
13
TOKO ref.:
100 082 93278
OSCB
10 nF
IFB
H-183-4
GND1
10 nF
VCC2
5V
100
nF
1 kΩ
FDIV(A)
10 nF
QOUT
12
9
FDIV(B)
100 nF
to
prescaler
470 Ω
10 nF
GND1
10
11
MBH970
Fig.4 Application diagram.
1997 Apr 11
470 Ω
9
VCC1
100
nF
5V
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
90-04-05
95-02-25
SOT266-1
1997 Apr 11
EUROPEAN
PROJECTION
10
o
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1997 Apr 11
11
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 11
12
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
1997 Apr 11
13
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
1997 Apr 11
14
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
1997 Apr 11
15
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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA54
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
547047/1200/01/pp16
Date of release: 1997 Apr 11
Document order number:
9397 750 00909