BUK9225-55A TrenchMOS™ logic level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9225-55A in SOT428 (D-PAK). 2. Features ■ ■ ■ ■ TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c ■ Automotive and general purpose power switching: ◆ 12 V and 24 V loads ◆ Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb g MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. s BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit − 55 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 5 V − 43 A Ptot total power dissipation Tmb = 25 °C − 94 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance Tj = 25 °C; VGS = 5 V; ID = 25 A 21 25 Tj = 25 °C; VGS = 4.5 V; ID = 25 A − 27 Tj = 25 °C; VGS = 10 V; ID = 25 A 19 22 mΩ mΩ mΩ Min Max Unit − 55 V − 55 V − ±15 V − 43 A − 30 A − 173 A − 94 W 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions RGS = 20 kΩ Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tmb = 25 °C; Figure 1 Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C [1] Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C − 43 A IDRM pulsed reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 173 A unclamped inductive load; ID = 43 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C − 123 mJ Avalanche ruggedness WDSS [1] non-repetitive avalanche energy IDM is limited by chip, not package. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 2 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 03aa24 120 Ider 03aa16 120 Pder (%) 100 (%) 100 80 80 60 60 40 40 20 20 0 0 0 0 50 100 150 25 50 75 100 125 150 200 o Tmb ( C) 175 200 Tmb (oC) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ne70 103 ID (A) RDSon = VDS / ID 102 tp = 10 us 100 us 10 δ= P tp 1 ms T D.C. 10 ms t tp 100 ms T 1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 3 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) Conditions Value Unit thermal resistance from junction to ambient 71.4 K/W thermal resistance from junction to mounting Figure 4 base 1.6 K/W 7.1 Transient thermal impedance 03ne71 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 δ= P 0.02 Single Shot T t tp T 10-2 10-6 tp 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 4 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 55 − − V Tj = −55 °C 50 − − V Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 − − V Tj = −55 °C − − 2.3 V Tj = 25 °C − 0.05 10 µA Tj = 175 °C − − 500 µA − 2 100 nA Tj = 25 °C − 21 25 mΩ Tj = 175 °C − − 50 mΩ VGS = 4.5 V; ID = 25 A; − − 27 mΩ VGS = 10 V; ID =25 A; − 19 22 mΩ VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 − 1360 1724 pF − 240 287 pF − 160 222 pF − 17 − ns − 104 − ns − 82 − ns Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current VDS = 55 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Figure 7 and 8 Dynamic characteristics Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time − 80 − ns Ld internal drain inductance measured from drain to centre of die − 2.5 − nH Ls internal source inductance measured from source lead to source bond pad − 7.5 − nH VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω; © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 5 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 15 − 0.85 1.2 V trr reverse recovery time − 50 − ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V − 85 − nC ID (A) VGS (V) = 9 180 8 03na05 RDSon (mΩ) 10 160 7 140 03na03 45 40 6 35 120 5 30 100 80 4 25 60 20 40 3 15 20 2.2 0 10 0 2 4 6 8 10 VDS (V) Tj = 25 °C 2 6 8 VGS (V) 10 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 3.2 3.4 3.6 03ne89 2.2 03na06 RDSon 50 (mΩ) 45 3.8 a 2 1.8 VGS (V)= 3 40 4 1.6 1.4 35 1.2 30 4 1 25 0.8 5 0.6 20 0.4 15 0.2 10 0 10 30 50 70 90 -60 ID (A) Tj = 25 °C 20 60 100 140 180 Tj (oC) R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification -20 Rev. 01 — 17 April 2001 6 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 03aa36 10-1 ID (A) 10-2 03aa33 2.5 VGS(th) (V) 2 1.5 10-3 1 10-4 0.5 10-5 min typ 10-6 0 -60 0 60 120 o 0 180 0.5 1 1.5 2 Tj ( C) 2.5 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. gfs (S) max 03na04 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 35 C 4000 (pF) 3500 30 3000 25 2500 20 2000 15 1500 10 1000 5 500 40 03na09 Ciss Coss Crss 0 0 0 20 40 60 ID (A) 10-2 80 Tj = 25 °C; VDS = 25 V 1 10 102 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification 10-1 Rev. 01 — 17 April 2001 7 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 03na00 100 ID (A) 03na02 6 VGS (V) 5 80 4 VDD= 14 V 60 VDD = 44 V 3 40 2 20 1 Tj = 25 oC Tj = 175 oC 0 0 0 2 4 VGS (V) 0 6 10 20 30 40 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03na01 100 IS (A) 80 60 Tj = 175 oC Tj = 25 oC 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD (V) VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 8 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 D1 mounting base E1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max. 2.38 2.22 mm A1(1) A2 b b1 max. b2 c 0.65 0.45 0.89 0.71 0.89 0.71 1.1 0.9 5.36 5.26 0.4 0.2 D1 E D max. max. max. E1 min. 6.22 5.98 4.0 6.73 6.47 4.81 4.45 e e1 2.285 4.57 HE max. L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.7 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC EIAJ TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13 Fig 16. SOT428 (D-PAK). © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 9 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 10. Revision history Table 6: Revision history Rev Date 01 20010417 CPCN Description - Product specification; initial version. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 10 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET 11. Data sheet status Data sheet status [1] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2001 All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 11 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA72) © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08134 Product specification Rev. 01 — 17 April 2001 12 of 13 BUK9225-55A Philips Semiconductors TrenchMOS™ logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 April 2001 Document order number: 9397 750 08134