DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage 40 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. APPLICATIONS PARAMETER MAX. UNIT PINNING • General purpose switching and muting PIN • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION handbook, halfpage 3 3 NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. 1 1 MARKING 2 2 Top view TYPE NUMBER MARKING CODE PBSS2540F Fig.1 2C MAM410 Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 2001 Oct 31 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air MAX. UNIT 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS − TYP. − MAX. collector-base cut-off current VCB = 30 V; IE = 0; Tj = 150 °C − − 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 100 − − VCE = 2 V; IC = 500 mA; note 1 50 − − IC = 10 mA; IB = 0.5 mA − − 50 mV IC = 100 mA; IB = 5 mA − − 100 mV IC = 200 mA; IB = 10 mA − − 200 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV collector-emitter saturation voltage 100 UNIT ICBO VCEsat VCB = 30 V; IE = 0 MIN. nA RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 380 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 1.1 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 450 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 6 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Oct 31 3 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F MHC082 1200 MHC085 1200 VBE (mV) handbook, halfpage handbook, halfpage hFE 1000 1000 (1) 800 (1) 800 600 (2) (2) 600 400 (3) 400 200 0 10−1 1 102 10 IC (mA) (3) 200 10−1 103 VCE = 2 V. (1) Tamb = 150 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC086 103 handbook, halfpage 1 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MHC084 1200 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) 800 102 (2) (1) 600 (2) (3) 10 10−1 1 10 102 (3) 400 IC (mA) 200 10−1 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Oct 31 4 1 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F MHC083 1200 IC (mA) 1000 RCEsat (Ω) (1) (2) (3) (5) 800 MHC087 103 handbook, halfpage handbook, halfpage 102 (4) (6) (7) (8) 10 (9) 600 (10) (1) (2) (3) 400 1 200 10−1 10−1 0 0 1 2 3 4 5 VCE (V) (1) (2) (3) (4) IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. (5) IB = 15 mA. (6) IB = 12.5 mA. (7) IB = 10 mA. (8) IB = 7.5 mA. (9) IB = 5.0 mA. (10) IB = 2.5 mA. Collector current as a function of collector-emitter voltage; typical values. 2001 Oct 31 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.7 Fig.6 1 5 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2001 Oct 31 REFERENCES IEC JEDEC EIAJ SC-89 6 EUROPEAN PROJECTION ISSUE DATE 98-10-23 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Oct 31 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Oct 31 Document order number: 9397 750 08372