Bulletin I25233 10/06 ST173CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) 330A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (A-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST173C..C Units 330 A 55 °C 610 A 25 °C @ 50Hz 4680 A @ 60Hz 4900 A @ 50Hz 110 KA2s @ 60Hz 100 KA2s 1000 to1200 V 15 to 30 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I2 t V DRM/V RRM tq range TJ www.irf.com 1 ST173CPbF Series Bulletin I25233 10/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 10 1000 1100 12 1200 1300 Type number ST173C..C 40 Current Carrying Capability ITM ITM Frequency ITM 180oel 180oel Units 100μs 50Hz 400Hz 760 730 660 590 1200 1260 1030 1080 5570 2800 4920 2460 1000Hz 600 490 1200 1030 1620 1390 2500Hz 350 270 850 720 800 680 50 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/μs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction I T(AV) Parameter ST173C..C Max. average on-state current 330 (120) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled @ Heatsink temperature I T(RMS) Max. RMS on-state current Units Conditions 610 DC @ 25°C heatsink temperature double side Max. peak, one half cycle, 4680 t = 10ms No voltage non-repetitive surge current 4900 t = 8.3ms reapplied 3940 t = 10ms 100% VRRM 4120 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied cooled I TSM I 2t Maximum I2t for fusing A 110 100 KA2s 77 71 I √t 2 2 Maximum I √t for fusing 2 1100 KA √s 2 t = 0.1 to 10ms, no voltage reapplied www.irf.com ST173CPbF Series Bulletin I25233 10/06 On-state Conduction Parameter VTM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 ST173C..C Units 2.07 1.55 ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse p V Low level value of forward 0.87 r t2 High level value of forward slope resistance 0.77 IH Maximum holding current 600 IL Typical latching current (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.61 slope resistance Conditions mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mA 1000 T J = 25°C, I T > 30A T J = 25°C, V A = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST173C..C Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM Typical delay time Max. turn-off time p 1.1 Min 15 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST173C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/μs I RRM I DRM Max. peak reverse and off-state leakage current 40 mA ST173C..C Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω I GD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions TJ = TJ max, rated VDRM applied 3 ST173CPbF Series Bulletin I25233 10/06 Thermal and Mechanical Specification Parameter ST173C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg R thJ-hs Max. thermal resistance, Units Conditions °C 0.17 junction to heatsink DC operation single side cooled K/W 0.08 R thC-hs Max. thermal resistance, 0.033 case to heatsink 0.017 Mounting force, ± 10% 4900 N (500) (Kg) 50 g F wt Approximate weight Case style K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled TO - 200AB (A-PUK) See Outline Table ΔRthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W TJ = TJ max. Single Side Double Side Single Side Double Side 180° 0.015 0.016 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Ordering Information Table Device Code 1 - Thyristor ST 17 3 C 12 C H K 1 1 2 3 4 5 6 7 8 9 P 10 11 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) dv/dt - tq combinations available dv/dt (V/µs) 15 18 t (µs) 20 q 25 30 20 CL CP CK CJ -- 50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH *Standard part number. All other types available only on request. 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) 11 - P = Lead Free 4 www.irf.com ST173CPbF Series Bulletin I25233 10/06 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST173C..C Series (Single Side Cooled) RthJ-hs(DC) = 0.17 K/ W 120 110 100 90 Conduction Angle 80 70 60 30° 60° 180° 90° 50 120° 40 0 40 80 120 160 200 240 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 130 ST173C..C Series (Single Side Cooled) R thJ-hs(DC) = 0.17 K/ W 120 110 100 90 80 Conduction Period 70 60 30° 50 60° 90° 120° 40 30 180° 20 0 50 100 150 200 250 DC 300 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 350 5 ST173CPbF Series 130 ST173C..C Series (Double Side Cooled) RthJ-hs(DC) = 0.08 K/ W 120 110 100 90 Conduc tion Angle 80 70 30° 60° 60 90° 120° 50 180° 40 30 0 50 100 150 200 250 300 350 400 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25233 10/06 130 ST173C..C Series (Double Side Cooled) RthJ-hs(DC) = 0.08 K/ W 120 110 100 90 Conduction Period 80 70 60 50 40 60° 30 30° 20 0 100 600 RMS Limit 500 400 Conduction Angle 300 ST173C..C Series TJ = 125°C 200 100 0 0 4500 700 DC 180° 120° 90° 60° 30° 1200 1000 800 600 RMS Limit Conduction Period 400 ST173C..C Series TJ = 125°C 200 0 0 100 200 300 400 500 600 700 Average On-state Current (A) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics 3000 2500 ST173C..C Series 2000 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 600 Average On-state Current (A) 3500 1 500 1400 50 100 150 200 250 300 350 400 450 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 4000 Maximum Average On-state Power Loss (W) 180° 120° 90° 60° 30° Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 1000 700 400 Fig. 4 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 800 300 DC Average On-state Current (A) Average On-state Current (A) 900 200 120° 90° 180° 5000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4500 Of Conduction May Not Be Maintained. Initial TJ = 125°C 4000 No Voltage Reapplied Rated VRRM Reapplied 3500 3000 2500 2000 ST173C..C Series 1500 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST173CPbF Series Bulletin I25233 10/06 Transient Thermal Impedanc e Z thJ-hs (K/ W) Instantaneous On-state Current (A) 10000 ST173C..C Series 1000 TJ= 25°C TJ= 125°C 100 1 1.5 2 2.5 3 3.5 4 4.5 1 ST173C..C Series 0.1 Steady State Value R thJ-hs = 0.17 K/ W 0.01 (Single Side Cooled) R thJ-hs = 0.08 K/ W (Double Side Cooled) Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Rec overy Charge - Qrr (µC) 250 I TM = 500 A 300 A 200 A 150 100 A 100 50 A 50 0 0 20 40 60 80 0.1 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 200 0.01 Square Wave Pulse Duration (s) Instantaneous On-state Voltage (V) ST173C..C Series TJ = 125 °C (DC Operation) 0.001 0.001 100 160 140 ITM = 500 A 300 A 120 200 A 100 100 A 50 A 80 60 40 ST173C..C Series TJ= 125 °C 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 Snub ber circuit Rs = 47 ohms Cs = 0.22 µF V D = 80% V DRM Snub b er c irc uit Rs = 47 ohms Cs = 0.22 µF V D = 80% VDRM 1000 500 400 200 100 50 Hz 400 200 1000 500 1500 1E3 1500 2500 2500 3000 3000 ST173C..C Series Sinusoida l pulse TC = 40°C 5000 tp 1E2 1E1 100 50 Hz 1E2 1E3 ST173C..C Series Sinusoid al pulse TC = 55°C 5000 1E1 1E 4 1E 1E4 1 tp 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics www.irf.com 7 ST173CPbF Series Bulletin I25233 10/06 Pea k On-state Current (A) 1E4 Snub b er c irc uit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM Snub b er circ uit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM 1E3 2000 1500 100 50 Hz 400 200 1000 500 1500 2000 2500 2500 ST173C..C Series Trap ezoid al p ulse TC = 40°C d i/ d t = 50A/ µs 3000 tp 5000 1E2 1E1 1E2 tp 5000 1E2 100 50 Hz ST173C..C Series Tra pezoida l pulse TC = 55°C d i/ dt = 50A/ µs 3000 1E1 1E4 1E41E1 1E3 400 200 1000 500 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics Peak On-state Current (A) 1E4 Snub ber c irc uit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM 1E3 1500 1000 500 400 200 100 Snub ber c ircuit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM 50 Hz 1500 2500 100 400 200 50 Hz 2500 3000 1E2 1000 500 3000 5000 5000 10000 ST173C..C Series Trap ezoid al p ulse TC = 40°C di/d t = 100A/µs tp 1E1 1E1 1E2 tp 1E1 1E4 1E41E1 1E3 ST173C..C Series Trap ezoid al p ulse TC = 55°C d i/ d t = 100A/ µs 10000 1E2 1E3 1E4 Pulse Basewid th (µs) Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics Pea k On-state Current (A) 1E5 ST173C..C Series Rec ta ngular p ulse di/ dt = 50A/ µs tp 1E4 20 joules p er pulse 20 joules p er p ulse 1 2 3 5 10 2 0.5 1E3 0.5 0.2 0.3 0.1 0.2 1E2 tp 5 1 0.3 1E1 1E1 3 10 0.1 ST173C..C Series Sinusoida l pulse 1E2 1E3 Pulse Basewidth (µs) 1E1 1E4 1E41E1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST173CPbF Series Bulletin I25233 10/06 Rec tangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST173C..C Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/06 www.irf.com 9