DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF246B PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 2 andbook, halfpage 4 6 8 d2 g2 s g1 APPLICATIONS d1 Large signal applications in the VHF frequency range. 1 3 5 7 Top view MBB157 MBC826 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. DESCRIPTION 1 source 2 source 3 drain 1 4 gate 1 5 drain 2 6 gate 2 7 source 8 source WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB 2000 Feb 04 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 60 >14 >55 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 8 A Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded − 130 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 1.35 K/W Rth mb-h thermal resistance from mounting base total device; both sections equally to heatsink loaded 0.25 K/W MGR738 MRA932 160 handbook, 50 halfpage handbook, halfpage ID (A) Ptot (W) 10 120 (2) (1) (2) 80 (1) 1 40 10−1 1 10 VDS (V) 0 102 0 40 80 160 Th (°C) (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Total device; both sections equally loaded. Fig.2 DC SOAR. 2000 Feb 04 120 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA − 65 − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 1.5 A; VDS = 10 V 1.2 1.8 − S RDSon drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 10 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 11 − pF MGR739 6 T.C. (mV/K) 4 MGR740 12 handbook, halfpage handbook, halfpage Tj = 25 °C ID (A) 2 125 °C 8 0 −2 4 −4 −6 10 102 103 ID (mA) 0 104 0 10 VGS (V) 20 VDS = 10 V. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. 2000 Feb 04 Fig.5 4 Drain current as a function of gate-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B MGR741 MGR742 240 0.8 handbook, halfpage handbook, halfpage RDSon C (pF) (Ω) 0.6 180 0.4 120 0.2 60 Cis Cos 0 0 0 40 80 120 160 0 10 Tj (°C) VGS = 10 V; ID = 1.5 A. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. MGR743 24 handbook, halfpage Crs (pF) 18 12 6 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. 2000 Feb 04 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B APPLICATION INFORMATION RF performance in CW operation in a push-pull, common source, class-B circuit. Th = 25 °C; Rth mb-h = 0.25 K/W; unless otherwise specified. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) 175 28 2 × 50 60 ηD (%) Gp (dB) >14 >55 typ. 19 typ. 65 Ruggedness in class-B operation The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power. MGR745 MGR744 100 25 handbook, halfpage Gp (dB) 100 handbook, halfpage ηD (%) Gp PL (W) 20 80 80 15 60 60 10 40 40 5 20 20 0 0 ηD 0 0 20 40 60 PL (W) 80 0 0.5 1.0 1.5 2.0 2.5 PIN (W) Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA; ZL = 4.6 + j5 Ω; f = 175 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA; ZL = 4.6 + j5 Ω; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power; typical values per section. Power gain and efficiency as a function of load power; typical values per section. 2000 Feb 04 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B +VD handbook, full pagewidth R5 R3 C11 +VG C12 C7 C13 C8 L12 C14 R7 C15 R1 L13 L1 50 Ω input C1 L4 L6 L8 L10 L16 L18 L20 C25 L23 L2 C3 C4 C5 C6 C21 C22 C23 C2 L3 L5 L7 L9 L11 L17 L19 L14 C16 R2 C17 C10 R8 L15 C18 C9 C19 C20 +VG R4 R6 +VD MGR749 f = 175 MHz. Fig.11 Test circuit for class-B operation. 2000 Feb 04 L22 7 L21 C24 C26 L24 50 Ω output Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B List of components class-B test circuit (see Figs 11 and 12) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF C3 film dielectric trimmer 4 to 40 pF C4 multilayer ceramic chip capacitor; note 1 180 pF C5, C22, C24 film dielectric trimmer C6 multilayer ceramic chip capacitor; note 1 100 pF C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor; note 1 100 nF C8, C10, C15, C16 multilayer ceramic chip capacitor; note 1 680 pF C11, C20 multilayer ceramic chip capacitor; note 1 10 nF 2222 809 08002 5 to 60 pF 2222 809 08003 2222 852 47104 2222 852 47103 10 µF, 63 V C13, C18 electrolytic capacitor C21 multilayer ceramic chip capacitor; note 1 82 pF C23 multilayer ceramic chip capacitor; note 1 33 pF L1, L3, L22, L24 stripline; note 2 55 Ω 111 × 2.5 mm L2, L23 semi-rigid cable 50 Ω length 111 mm ext. dia 2.2 mm L4, L5 stripline; note 2 50 Ω 6.5 × 2.8 mm L6, L7 stripline; note 2 50 Ω 35 × 2.8 mm L8, L9 stripline; note 2 50 Ω 5 × 2.8 mm L10, L11 stripline; note 2 50 Ω 9 × 2.8 mm L12, L15 grade 3B Ferroxcube wideband HF choke L13, L14 4 turns enamelled 1 mm copper wire 50 nH length 6.5 mm int. dia. 4 mm leads 2 × 5 mm L16, L17 stripline; note 2 50 Ω 17 × 2.8 mm L18, L19 stripline; note 2 50 Ω 26 × 2.8 mm L20, L21 stripline; note 2 50 Ω 4 × 2.8 mm R1, R2, R7, R8 metal film resistor 0.4 W, 10 Ω R3, R4 10 turns potentiometer 50 kΩ R5, R6 metal film resistor 0.4 W, 205 kΩ 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (εr = 4.5); thickness 1⁄ inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side 16 of the board are connected together by means of copper straps and hollow rivets. 2000 Feb 04 8 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B 200 handbook, full pagewidth rivet rivet strap strap strap strap rivet rivet 110 strap strap strap strap rivet rivet +VG +VD L22 L12 C11 C13 C14 C12 R7 L1 + L2 C15 C7 C8 R1 C1 C3 C2 L8 L9 L13 C21 L16 L17 C22 L14 L6 L7 L4 C4 L5 C5 R2 C10 C9 C6 L10 L11 L20 C23 C25 C26 L18 L19 C24 L21 C16 R3 C17 L15 C19 C20 C18 L23 + L24 L3 +VG +VD MGR750 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 175 MHz class-B test circuit. 2000 Feb 04 9 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B MGR746 MGR747 10 15 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 5 RL 10 XL 0 5 xi −5 0 0 100 200 300 400 0 100 200 300 f (MHz) 400 f (MHz) Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA; RGS = 10 Ω; PL = 60 W (total device). Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA; RGS = 10 Ω; PL = 60 W (total device). Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values per section. MGR748 25 handbook, halfpage Gp (dB) 20 handbook, halfpage 15 Zi ZL 10 MBA379 5 0 0 100 200 300 400 f (MHz) Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA; RGS = 10 Ω; PL = 60 W (total device). Fig.16 Power gain as a function of frequency; typical values per section. Fig.15 Definition of MOS impedance. 2000 Feb 04 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 8 leads SOT161A D A F D1 U1 B q C H1 w2 M C M c b 2 H 4 6 8 E1 U2 1 A 3 5 7 E w1 M A M B M p Q w3 M b1 e1 e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 mm 7.27 6.47 2.93 2.66 2.04 1.77 inches c D D1 E E1 e 0.18 10.22 10.21 10.21 10.21 3.80 0.10 10.00 9.94 10.00 9.94 F e1 3.50 H H1 p Q q U1 U2 w1 2.70 16.81 12.83 3.33 4.32 24.97 10.34 18.42 0.25 2.08 16.21 12.57 3.07 4.06 24.71 10.08 w2 w3 0.51 0.25 0.286 0.115 0.080 0.007 0.402 0.402 0.402 0.402 0.106 0.662 0.505 0.131 0.170 0.983 0.407 0.150 0.138 0.725 0.010 0.020 0.010 0.255 0.105 0.070 0.004 0.394 0.391 0.394 0.391 0.082 0.638 0.495 0.121 0.160 0.973 0.397 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-29 99-10-04 SOT161A 2000 Feb 04 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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