Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION BYW29EX series QUICK REFERENCE DATA Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOD113 PIN SYMBOL PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current VRRM VF IF(AV) trr IRRM PIN CONFIGURATION MAX. MAX. UNIT 150 150 200 200 V 0.895 8 25 0.2 0.895 8 25 0.2 V A ns A SYMBOL DESCRIPTION case 1 cathode 2 anode k 1 a 2 case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IF(AV) Average forward current1 IF(RMS) IFRM RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 106 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature IFSM I2t IRRM IRSM Tstg Tj MIN. - square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 8 A - 7.3 11.3 16 A A A - 80 88 A A - 32 0.2 0.2 A2s A A -40 - 150 150 ˚C ˚C 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from both terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from both terminals f = 1 MHz to external heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.80 0.92 1.1 0.2 2 0.895 1.05 1.3 0.6 10 V V V mA µA MIN. TYP. MAX. UNIT - 4 20 11 25 nC ns - 15 1 20 - ns V THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs October 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29EX series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F Ths(max) / C BYW29 PF / W Vo = 0.791 V 84 D = 1.0 Rs = 0.013 ohms 95 10 0.5 8 time 106 0.2 6 117 0.1 VF 4 tp I V D= 139 2 fr t T VF 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 8 PF / W Ths(max) / C BYW29 a = 1.57 Vo = 0.791 V Rs = 0.013 Ohms 7 117 2.8 5 Voltage Pulse Source 122.5 4 4 106 111.5 1.9 2.2 6 D.U.T. 128 3 133.5 2 139 1 144.5 to ’scope 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 October 1998 150 12 10 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R Current shunt 128 tp T 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-hs (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX Fig.11. Transient thermal impedance; Zth j-hs = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series MECHANICAL DATA Dimensions in mm 10.3 max 4.6 max Net Mass: 2 g 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 Fig.12. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.200