DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance 3 source • Designed for broadband operation (HF to 1 GHz). 1 handbook, halfpage APPLICATIONS • Communication transmitter applications in the UHF frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. Top view MBK905 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 10 (PEP) >16 >35 ≤−30 CW, class-AB (1-tone) 960 26 10 >16 >45 − MODE OF OPERATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 23 2 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V ID drain current (DC) Ptot total power dissipation Tstg Tj − 2.2 A − tbf W storage temperature −65 +150 °C junction temperature − 200 °C Tmb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE UNIT 4.6 K/W 0.4 K/W Tmb = 25 °C; note 1 Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 0.15 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 3 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 1 µA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 9 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.6 − pF 2000 Feb 23 3 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 25 10 (PEP) >16 >35 ≤−30 CW, class-AB (1-tone) 960 26 25 10 >16 >45 − MODE OF OPERATION Ruggedness in class-AB operation The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. MGS995 30 p (dB) 25 handbook, G halfpage ηD 60 ηD (%) 50 40 20 Gp 15 30 10 20 5 10 0 800 840 880 920 0 960 1000 f (MHz) Class-AB operation; VDS = 26 V; IDQ = 80mA; PL = 10 W (PEP). Fig.2 Power gain and efficiency as functions of frequency, typical values. 2000 Feb 23 4 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 MGS996 4 handbook, halfpage ri Zi MGS997 15 handbook, halfpage ZL (Ω) (Ω) 0 10 RL −4 XL xi 5 −8 −12 800 840 880 920 0 800 960 1000 f (MHz) 840 880 920 960 1000 f (MHz) VDS = 26 V; IDQ = 80 mA; PL = 10 W (PEP); Th ≤ 25 °C. Impedance measured at reference planes (see Fig.5). VDS = 26 V; IDQ = 80 mA; PL = 10 W (PEP); Th ≤ 25 °C. Impedance measured at reference planes (see Fig.5). Fig.3 Fig.4 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. handbook, halfpage drain handbook, halfpage ZL gate Z IN reference planes Fig.5 2000 Feb 23 MGS998 MGT002 Measuring reference planes SOT538A. Fig.6 Definition of transistor impedance. 5 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 PACKAGE OUTLINE Ceramic surface mounted package; 2 leads SOT538A Package under development D Philips Semiconductors reserves the right to make changes without notice. A 3 D1 D2 B c 1 L E2 H E1 E 2 α w1 M B M b Q 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 E E1 E2 H L Q w1 α mm 2.95 2.29 1.35 1.19 0.23 0.18 5.16 5.00 4.65 4.50 5.41 5.00 4.14 3.99 3.63 3.48 4.14 3.99 7.49 7.24 2.03 1.27 0.10 0.00 0.25 7° 0° inches 0.116 0.090 0.053 0.047 0.009 0.007 0.203 0.197 0.183 0.177 0.213 0.197 0.163 0.157 0.143 0.137 0.163 0.157 0.295 0.285 0.080 0.050 0.004 0.000 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-30 SOT538A 2000 Feb 23 EUROPEAN PROJECTION 6 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1043 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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