PHILIPS BT145-800R

Philips Semiconductors
Product specification
Thyristors
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - TO220AB
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
BT145 series
QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BT145Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R
500
600R
600
800R
800
V
16
25
300
16
25
300
16
25
300
A
A
A
PIN CONFIGURATION
SYMBOL
tab
a
k
g
1 23
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; Tmb ≤ 101 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
MIN.
MAX.
UNIT
-
-500R -600R -800R
5001
6001
800
V
-
16
25
A
A
-
300
330
450
200
A
A
A2s
A/µs
-40
-
5
5
5
20
0.5
150
125
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT145 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
1.0
K/W
-
60
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IGT
IL
IH
VT
VGT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
ID, IR
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 30 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.25
-
5
25
20
1.1
0.6
0.4
0.2
35
80
60
1.5
1.0
1.0
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs
200
500
-
V/µs
-
2
-
µs
-
70
-
µs
tgt
tq
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
25
BT145 series
Ptot / W
conduction form
angle
factor
degrees
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
20
15
Tmb(max) / C
100
a = 1.57
BT145
ITSM / A
350
1.9
BT145
105
2.2
time
T
Tj initial = 25 C max
250
2.8
110
4
10
115
5
120
ITSM
IT
300
200
150
100
50
0
0
5
10
IF(AV) / A
125
20
15
0
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form
factor = IT(RMS)/ IT(AV).
10000
10
100
Number of half cycles at 50Hz
1000
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
BT145
ITSM / A
1
50
BT145
IT(RMS) / A
40
30
1000
dI T /dt limit
20
ITSM
IT
10
time
T
Tj initial = 25 C max
100
10us
100us
0
0.01
10ms
1ms
0.1
1
surge duration / s
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
30
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 101˚C.
BT145
IT(RMS) / A
1.6
BT151
1.4
20
1.2
15
1
10
0.8
5
0.6
0
50
Tmb / C
100
0.4
-50
150
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
October 1997
VGT(Tj)
VGT(25 C)
101 C
25
0
-50
10
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
3
BT145 series
IGT(Tj)
IGT(25 C)
50
BT145
BT145
IT / A
Tj = 125 C
Tj = 25 C
2.5
40
2
30
Vo = 1.045 V
Rs = 0.011 ohms
typ
max
1.5
20
1
10
0.5
0
-50
0
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0.5
1
VT / V
1.5
2
Fig.10. Typical and maximum on-state characteristic.
10
BT145
2.5
BT145
Zth j-mb (K/W)
1
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
IH(Tj)
IH(25 C)
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
10000
BT145
dVD/dt (V/us)
2.5
1000
2
gate open circuit
1.5
100
1
0.5
0
-50
0
50
Tj / C
100
10
150
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
October 1997
0
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT145 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT145 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.200