DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors FEATURES PINNING - SOT23 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain 3 g gate APPLICATIONS • AM input stage in car radios • VHF amplifiers handbook, halfpage 2 1 • Oscillators and mixers. d g DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. s 3 Top view MAM036 CAUTION Marking codes: PMBFJ308: M08. PMBFJ309: M09. PMBFJ310: M10. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT − ±25 V PMBFJ308 −1 −6.5 V PMBFJ309 −1 −4 V −2 −6.5 V PMBFJ308 12 60 mA PMBFJ309 12 30 mA PMBFJ310 24 60 mA VDS drain-source voltage VGSoff gate-source cut-off voltage VDS = 10 V; ID = 1 µA PMBFJ310 IDSS MIN. drain current VGS = 0; VDS = 10 V Ptot total power dissipation up to Tamb = 25 °C − 250 mW yfs forward transfer admittance VDS = 10 V; ID = 10 mA 10 − mS 1996 Sep 11 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSO gate-source voltage open drain − −25 V VGDO gate-drain voltage open source − −25 V IG forward gate current (DC) − 50 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C up to Tamb = 25 °C MBB688 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb (°C) Fig.2 Power derating curve. 1996 Sep 11 3 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 500 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 VGSoff gate-source cut-off voltage MIN. TYP. MAX. UNIT −25 − − PMBFJ308 −1 − −6.5 V PMBFJ309 −1 − −4 V −2 − −6.5 V − − 1 V PMBFJ308 12 − 60 mA PMBFJ309 12 − 30 mA PMBFJ310 24 − 60 mA ID = 1 µA; VDS = 10 V PMBFJ310 VGSS gate-source forward voltage IG = 1 mA; VDS = 0 IDSS drain current VDS = 10 V; VGS = 0 V V IGSS gate leakage current VGS = −15 V; VDS = 0 − − −1 nA RDSon drain-source on-state resistance VGS = 0; VDS = 100 mV − 50 − Ω yfs forward transfer admittance ID = 10 mA; VDS = 10 V 10 − − mS yos common source output admittance ID = 10 mA; VDS = 10 V − − 250 µS 1996 Sep 11 4 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cis input capacitance VDS = 10 V; VGS = −10 V; f = 1 MHz 3 5 pF VDS = 10 V; VGS = 0; Tamb = 25 °C 6 − pF Crs reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz 1.3 2.5 pF gis common source input conductance VDS = 10 V; ID = 10 mA; f = 100 MHz 200 − µS VDS = 10 V; ID = 10 mA; f = 450 MHz 3 − mS gfs common source transfer conductance VDS = 10 V; ID = 10 mA; f = 100 MHz 13 − mS VDS = 10 V; ID = 10 mA; f = 450 MHz 12 − mS common source reverse conductance VDS = 10 V; ID = 10 mA; f = 100 MHz −30 − µS VDS = 10 V; ID = 10 mA; f = 450 MHz −450 − µS grs gos common source output conductance VDS = 10 V; ID = 10 mA; f = 100 MHz 150 − µS VDS = 10 V; ID = 10 mA; f = 450 MHz 400 − µS Vn equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz 6 − nV/√Hz MCD220 50 IDSS (mA) handbook, halfpage yfs (mS) 40 16 30 12 20 8 10 4 0 0 −1 −2 −3 0 −4 VGSoff (V) 0 Fig.4 Drain current as a function of gate-source cut-off voltage; typical values. 1996 Sep 11 −2 −4 −6 −8 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.3 MCD219 20 handbook, halfpage 5 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors MCD221 150 MCD222 80 handbook, halfpage handbook, halfpage RDSon (Ω) gos (µS) 60 100 40 50 20 0 0 −1 −2 0 −3 −4 VGSoff (V) 0 −1 −2 VDS = 10 V; ID = 10 mA; Tj = 25 °C. VDS = 100 mV; VGS = 0; Tj = 25 °C. Fig.5 Fig.6 Common-source output conductance as a function of gate-source cut-off voltage; typical values. −4 VGSoff (V) Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. MCD213 MCD216 16 −3 16 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 12 12 −0.25 V 8 8 −0.5 V 4 4 −0.75 V −1 V 0 0 0 4 8 12 16 −2 −1.5 VDS (V) −0.5 0 VGS (V) Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.7 Typical output characteristics; PMBFJ308. 1996 Sep 11 −1 Fig.8 Typical transfer characteristics; PMBFJ308. 6 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors MCD218 20 MCD215 20 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 16 16 −0.25 V 12 12 −0.5 V 8 8 −0.75 V 4 4 −1 V 0 −2 0 0 4 8 12 16 −1.5 −1 −0.5 VDS (V) VGS (V) 0 VDS = 10 V; Tj = 25 °C. Tj = 25 °C. Fig.9 Typical output characteristics; PMBFJ309. Fig.10 Typical transfer characteristics; PMBFJ309. MCD217 40 handbook, halfpage ID (mA) MCD214 40 VGS = 0 V handbook, halfpage ID (mA) 30 −0.5 V 30 20 −1 V 20 −1.5 V 10 10 −2 V −2.5 V 0 0 0 4 8 12 16 −4 −3 −2 −1 0 VGS (V) VDS (V) Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.11 Typical output characteristics; PMBFJ310. Fig.12 Typical transfer characteristics; PMBFJ310. 1996 Sep 11 7 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors MCD224 4 MCD223 10 Cis (pF) handbook, halfpage handbook, halfpage Crs (pF) 8 3 6 2 4 1 2 0 −10 −8 −6 −4 −2 0 −10 0 VGS (V) −8 −6 −4 −2 0 VGS (V) VDS = 10 V; Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig.13 Reverse transfer capacitance as a function of gate-source voltage; typical values. Fig.14 Input capacitance as a function of gate-source voltage; typical values. MCD229 103 handbook, full pagewidth ID (µA) 102 10 1 10−1 10−2 10−3 −2.5 −2 −1.5 −1 −0.5 VDS = 10 V; Tj = 25 °C. Fig.15 Drain current as a function of gate-source voltage; typical values. 1996 Sep 11 8 VGS (V) 0 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors MCD230 −104 handbook, full pagewidth ID = 10 mA IG (pA) −103 1 mA −102 100 µA −10 −1 IGSS −10−1 0 2 4 6 8 10 12 14 VDG (V) 16 Tj = 25 °C. Fig.16 Gate current as a function of drain-gate voltage; typical values. MCD231 104 handbook, full pagewidth IGSS (pA) 103 102 10 1 10−1 −25 0 25 50 75 100 125 Fig.17 Gate current as a function of junction temperature; typical values. 1996 Sep 11 9 150 Tj (oC) 175 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors MCD228 100 MCD227 100 handbook, halfpage handbook, halfpage gis, bis (mS) gfs, −bfs (mS) bis 10 gfs 10 gis 1 0.1 10 100 −bfs f (MHz) 1 10 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig.18 Input admittance; typical values. Fig.19 Forward transfer admittance; typical values. MCD226 2 10halfpage handbook, MCD225 100 handbook, halfpage −brs, −grs (mS) bos, gos (mS) 10 10 − brs 1 10−1 bos 1 − grs gos 10−2 10 100 f (MHz) 0.1 10 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig.20 Reverse transfer admittance; typical values. 1996 Sep 11 100 Fig.21 Output admittance; typical values. 10 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.55 0.45 0.150 0.090 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B TOP VIEW Dimensions in mm. Fig.22 SOT 23. 1996 Sep 11 11 MBC846 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 11 12