PHILIPS BUK7225-55A

BUK7225-55A
TrenchMOS™ standard level FET
Rev. 01 — 17 April 2001
Product specification
M3D300
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7225-55A in SOT428 (D-PAK).
2. Features
■
■
■
■
TrenchMOS™ technology
Q101 compliant
175 °C rated
Standard level compatible.
3. Applications
c
c
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
drain (d)
Simplified outline
Symbol
d
mb
g
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
s
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
−
55
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V
−
43
A
Ptot
total power dissipation
Tmb = 25 °C
−
94
W
Tj
junction temperature
−
175
°C
RDSon
drain-source on-state resistance
Tj = 25 °C
21
25
Tj = 175 °C
−
50
mΩ
mΩ
Min
Max
Unit
−
55
V
−
55
V
VGS = 10 V; ID = 25 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
RGS = 20 kΩ
−
±20
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
−
43
A
Tmb = 100 °C; VGS = 10 V; Figure 2
−
30
A
173
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
[1] −
Ptot
total power dissipation
−
94
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 25 °C
−
43
A
IDRM
pulsed reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
−
173
A
unclamped inductive load; ID = 43 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting T j = 25 °C
−
123
mJ
Avalanche ruggedness
WDSS
[1]
non-repetitive avalanche energy
IDM is limited by chip, not package.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
2 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa24
03aa16
120
Pder
120
Ider
(%)
(%)
100
100
80
80
60
60
40
40
20
20
0
0
0
50
100
150
0
200
o
Tmb ( C)
25
50
75
100
125
150
175
200
Tmb (oC)
VGS ≥ 4.5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ne70
103
ID
(A)
RDSon = VDS / ID
102
tp = 10 us
100 us
10
δ=
P
tp
1 ms
T
D.C.
10 ms
t
tp
100 ms
T
1
1
102
10
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
3 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-a)
thermal resistance from junction to ambient
minimum footprint, FR4 board
71.4
K/W
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
1.6
K/W
7.1 Transient thermal impedance
03ne71
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
0.05
δ=
P
0.02
Single Shot
T
t
tp
T
10-2
10-6
tp
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
4 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
55
−
−
V
Tj = −55 °C
50
−
−
V
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
−
−
V
Tj = −55 °C
−
−
4.4
V
Tj = 25 °C
−
0.05
10
µA
Tj = 175 °C
−
−
500
µA
−
2
100
nA
Tj = 25 °C
−
21
25
mΩ
Tj = 175 °C
−
−
50
mΩ
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
VDS = 55 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
−
980
1310
pF
−
240
290
pF
−
150
210
pF
−
11
−
ns
tr
rise time
−
56
−
ns
td(off)
turn-off delay time
−
38
−
ns
tf
fall time
−
31
−
ns
Ld
internal drain inductance
measured from drain to
centre of die
−
2.5
−
nH
Ls
internal source inductance
measured from source lead
to source bond pad
−
7.5
−
nH
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
5 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 20 A; VGS = 0 V;
Figure 15
−
0.85
1.2
V
trr
reverse recovery time
−
49
−
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
−
102
−
nC
03nb71
ID 180
(A)
160
VGS (V)= 12
14 16
RDSon
(mΩ)
30
20
140
03nb70
35
18
11
120
9.5
100
25
8.5
80
7.5
20
60
6.5
40
15
5.5
20
4.5
0
0
2
4
6
8
10
6
10
VDS (V)
Tj = 25 °C
10
12
14
16
18
20
VGS (V)
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
5.5
6
6.5
7
8
03ne89
2.2
03nb72
60
RDSon
(mΩ)
50
8
a
VGS (V) = 10
2
1.8
1.6
40
1.4
1.2
30
1
0.8
20
0.6
0.4
10
0.2
0
0
20
40
60
80
100
0
120
140
ID (A)
-60
Tj = 25 °C
20
60
100
140
180
Tj (oC)
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
-20
Rev. 01 — 17 April 2001
6 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
VGS(th)
4.5
4
(V)
03aa35
10-1
ID
(A)
max.
10-2
3.5
3
10-3
typ.
2.5
min
2
typ
max
10-4
min
1.5
1
10-5
0.5
0
10-6
-60
-20
20
60
100
140
Tj (oC)
180
0
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03nb68
25
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
2000
Ciss,
Coss, 1800
Crss
1600
(pF)
1400
gfs
(S)
20
03nb73
Ciss
Coss
1200
15
1000
Crss
800
10
600
400
5
200
0
0
0
20
40
60
10-2
80
ID (A)
Tj = 25 °C; VDS = 25 V
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
10-1
Rev. 01 — 17 April 2001
7 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03nb69
80
03nb67
10
VGS
(V)
ID
(A)
8
60
VDD = 14 V
Tj = 25 oC
VDD = 44 V
6
O
Tj = 175 C
40
4
20
2
0
0
0
2
4
6
8
10
VGS (V)
0
10
20
30
40
QG (nC)
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nb66
120
IS
(A)
100
80
O
Tj = 175 C
60
40
O
Tj = 25 C
20
0
0.0
0.5
1.0
VSD (V)
1.5
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
8 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
D1
mounting
base
E1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
2.38
2.22
mm
A1(1)
A2
b
b1
max.
b2
c
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
D1
E
D
max. max. max.
E1
min.
6.22
5.98
4.0
6.73
6.47
4.81
4.45
e
e1
2.285 4.57
HE
max.
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.7
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-09-13
Fig 16. SOT428 (D-PAK).
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
9 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
10. Revision history
Table 6:
Revision history
Rev Date
01
20010417
CPCN
Description
-
Product specification; initial version.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
10 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
11. Data sheet status
Data sheet status [1]
Product status [2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
11 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
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Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA72)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
12 of 13
BUK7225-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 17 April 2001
Document order number: 9397 750 08222