BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features n n n n Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications n n n n n n 2nd LNA stage and mixer stage in DBS LNB’s Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 0.55 V IC collector current - 25 40 mA mW Ptot total power dissipation Tsp ≤ 90 °C hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 °C [1] - - 136 160 280 400 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 70 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 55 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 2 V; f = 5.8 GHz; Tamb = 25 °C - 18 - dB NF noise figure IC = 5 mA; VCE = 2 V; f = 5.8 GHz; ΓS = Γopt; Tamb = 25 °C - 0.7 - dB [2] [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Discrete pinning Pin Description 1 emitter 2 base 3 emitter 4 collector Simplified outline 3 Graphic symbol 4 4 2 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number BFU725F/N1 Package Name Description Version - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F 4. Marking Table 4. Marking Type number Marking Description BFU725F/N1 B7* * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 2 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 2.8 V VEBO emitter-base voltage open collector - 0.55 V IC collector current - 40 mA - 136 mW Tsp ≤ 90 °C [1] Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 440 K/W 001aah424 200 Ptot (mW) 150 100 50 0 0 40 80 120 160 Tsp (°C) Fig 1. Power derating curve BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 3 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 2.8 - - V - 25 40 mA - 100 nA IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - hFE DC current gain IC = 10 mA; VCE = 2 V 160 280 400 CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 268 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 400 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 70 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 55 - GHz maximum power gain IC = 25 mA; VCE = 2 V; Tamb = 25 °C f = 1.5 GHz - 28 - dB f = 1.8 GHz - 27 - dB f = 2.4 GHz - 25.5 - dB f = 5.8 GHz - 18 - dB f = 12 GHz - 13 - dB f = 1.5 GHz - 26.7 - dB f = 1.8 GHz - 25.4 - dB f = 2.4 GHz - 23 - dB Gp(max) |s21|2 NF Gass insertion power gain noise figure associated gain IC = 25 mA; VCE = 2 V; Tamb = 25 °C f = 5.8 GHz - 16 - dB f = 12 GHz - 9.3 - dB f = 1.5 GHz - 0.42 - dB f = 1.8 GHz - 0.43 - dB f = 2.4 GHz - 0.47 - dB f = 5.8 GHz - 0.7 - dB f = 12 GHz - 1.1 - dB f = 1.5 GHz - 24 - dB f = 1.8 GHz - 22 - dB f = 2.4 GHz - 20 - dB IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C f = 5.8 GHz - 13.5 - dB f = 12 GHz - 10 dB BFU725F_N1_1 Product data sheet [1] - © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 4 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions PL(1dB) IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C output power at 1 dB gain compression IP3 [1] Min Typ Max Unit f = 1.5 GHz - 8.5 - dBm f = 1.8 GHz - 9 - dBm f = 2.4 GHz - 8.5 - dBm f = 5.8 GHz - 8 - dBm f1 = 1.5 GHz - 17 - dBm f1 = 1.8 GHz - 17 - dBm f1 = 2.4 GHz - 17 - dBm f1 = 5.8 GHz - 19 - dBm IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C; f2 = f1 + 1 MHz third-order intercept point Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. 001aak271 30 hFE (1) (2) IC (mA) 001aak272 400 (3) 350 (4) 20 (5) (6) 300 (7) (8) (9) 10 (10) 250 (1) (2) (3) (11) 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 0 10 20 30 IC (mA) Tamb = 25 °C. Tamb = 25 °C. (1) IB = 110 µA (1) VCE = 1 V (2) IB = 100 µA (2) VCE = 1.5 V (3) IB = 90 µA (3) VCE = 2 V (4) IB = 80 µA (5) IB = 70 µA (6) IB = 60 µA (7) IB = 50 µA (8) IB = 40 µA (9) IB = 30 µA (10) IB = 20 µA (11) IB = 10 µA Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain a function of collector current; typical values BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 5 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah427 160 001aak273 60 CCBS (fF) fT (GHz) 120 40 80 20 40 0 0 0 4 8 12 0 10 20 30 VCB (V) f = 1 MHz, Tamb = 25 °C. Fig 4. 40 IC (mA) VCE = 2 V; f = 2 GHz; Tamb = 25 °C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values 001aah429 102 (1) (2) (3) G (dB) MSG Gmax (4) MSG 10 1 10−1 (5) Gmax 1 102 10 IC (mA) VCE = 2 V; Tamb = 25 °C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 6 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah430 50 001aah431 50 G (dB) G (dB) 40 MSG 40 MSG IS21I2 30 30 IS21I2 20 20 Gp(max) Gp(max) MSG MSG 10 0 10−2 10−1 1 10 0 10−2 102 10 10−1 1 f (GHz) VCE = 2 V; IC = 5 mA; Tamb = 25 °C. Fig 7. VCE = 2 V; IC = 25 mA; Tamb = 25 °C. Gain as a function of frequency; typical values 001aah432 2.0 102 10 f (GHz) Fig 8. Gain as a function of frequency; typical values 001aah433 2.0 NFmin (dB) NFmin (dB) 1.6 1.6 (1) (1) 1.2 (2) 1.2 (2) 0.8 0.8 (3) (4) (5) 0.4 0.4 0 0 0 10 20 30 0 4 8 IC (mA) VCE = 2 V; Tamb = 25 °C. 12 16 f (GHz) VCE = 2 V; Tamb = 25 °C. (1) f = 12 GHz (1) IC = 25 mA (2) f = 5.8 GHz (2) IC = 5 mA (3) f = 2.4 GHz (4) f = 1.8 GHz (5) f = 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values Fig 10. Minimum noise figure as a function of frequency; typical values BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 7 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 SOT343F Fig 11. Package outline SOT343F BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 8 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description CDMA Code Division Multiple Access DBS Direct Broadcast Satellite DC Direct Current DRO Dielectric Resonator Oscillator LNA Low Noise Amplifier LNB Low Noise Block Ka Kurtz above NPN Negative-Positive-Negative RF Radio Frequency WLAN Wireless Local Area Network 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU725F_N1_1 20090713 Product data sheet - - BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 9 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 13 July 2009 10 of 11 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 July 2009 Document identifier: BFU725F_N1_1